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  • Electronic Resource  (12)
  • 1995-1999  (12)
Material
  • Electronic Resource  (12)
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Year
  • 1
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent measurements of the two-dimensional (2-D) spatial profiles of divertor plasma density, temperature, and emissivity in the DIII-D tokamak [J. Luxon et al., in Proceedings of the 11th International Conference on Plasma Physics and Controlled Nuclear Fusion (International Atomic Energy Agency, Vienna, 1987), p. 159] under highly radiating conditions are presented. Data are obtained using a divertor Thomson scattering system and other diagnostics optimized for measuring the high electron densities and low temperatures in these detached divertor plasmas (ne≤1021 m−3, 0.5 eV≤Te). D2 gas injection in the divertor increases the plasma radiation and lowers Te to less than 2 eV in most of the divertor volume. Modeling shows that this temperature is low enough to allow ion–neutral collisions, charge exchange, and volume recombination to play significant roles in reducing the plasma pressure along the magnetic separatrix by a factor of 3–5, consistent with the measurements. Absolutely calibrated vacuum ultraviolet spectroscopy and 2-D images of impurity emission show that carbon radiation near the X-point, and deuterium radiation near the target plates contribute to the reduction in Te. Uniformity of radiated power (Prad) (within a factor of 2) along the outer divertor leg, with peak heat flux on the divertor target reduced fourfold, was obtained. A comparison with 2-D fluid simulations shows good agreement when physical sputtering and an ad hoc chemical sputtering source (0.5%) from the private flux region surface are used. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reliable operation of discharges with negative central magnetic shear has led to significant increases in plasma performance and reactivity in both low confinement, L-mode, and high confinement, H-mode, regimes in the DIII-D tokamak [Plasma Physics and Controlled Nuclear Fusion Research 1986 (International Atomic Energy Agency, Vienna, 1987), Vol. 1, p. 159]. Using neutral beam injection early in the initial current ramp, a large range of negative shear discharges have been produced with durations lasting up to 3.2 s. The total noninductive current (beam plus bootstrap) ranges from 50% to 80% in these discharges. In the region of shear reversal, significant peaking of the toroidal rotation [fφ(0)∼30–60 kHz] and ion temperature [Ti(0)∼15–22 keV] profiles are observed. In high-power discharges with an L-mode edge, peaked density profiles are also observed. Confinement enhancement factors up to H≡τE/τITER-89P∼2.5 with an L-mode edge, and H∼3.3 in an edge localized mode (ELM)-free H mode, are obtained. Transport analysis shows both ion thermal diffusivity and particle diffusivity to be near or below standard neoclassical values in the core. Large pressure peaking in the L mode leads to high disruptivity with βN≡βT/(I/aB)≤2.3, while broader pressure profiles in the H mode gives low disruptivity with βN≤4.2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The confinement and the stability properties of the DIII-D tokamak [Plasma Physics and Controlled Nuclear Fusion Research 1986 (International Atomic Energy Agency, Vienna, 1987), Vol. 1, p. 159] high-performance discharges are evaluated in terms of rotational and magnetic shear, with an emphasis on the recent experimental results obtained from the negative central magnetic shear (NCS) experiments. In NCS discharges, a core transport barrier is often observed to form inside the NCS region accompanied by a reduction in core fluctuation amplitudes. Increasing negative magnetic shear contributes to the formation of this core transport barrier, but by itself is not sufficient to fully stabilize the toroidal drift mode (trapped-electron-ηi mode) to explain this formation. Comparison of the Doppler shift shear rate to the growth rate of the ηi mode suggests that the large core E×B flow shear can stabilize this mode and broaden the region of reduced core transport. Ideal and resistive stability analysis indicates the performance of NCS discharges with strongly peaked pressure profiles is limited by the resistive interchange mode to low βN≤2.3. This mode is insensitive to the details of the rotational and the magnetic shear profiles. A new class of discharges, which has a broad region of weak or slightly negative magnetic shear (WNS), is described. The WNS discharges have broader pressure profiles and higher β values than the NCS discharges, together with high confinement and high fusion reactivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A video camera system has been installed on the DIII-D tokamak for two-dimensional spatial studies of line emission in the lower divertor region. The system views the divertor tangentially at approximately the height of the X point through an outer port. At the tangency plane, the entire divertor from the inner wall to outside the DIII-D bias ring is viewed with spatial resolution of ∼1 cm. The image contains information from ∼90 deg of toroidal angle. In a recent upgrade, remotely controllable filter changers were added which have produced images from nominally identical discharges using different spectral lines. Software was developed to calculate the response function matrix of the optical system using distributed computing techniques and assuming toroidal symmetry. Standard sparse matrix algorithms are then used to invert the three-dimensional images onto a poloidal plane. Spatial resolution of the inverted images is 2 cm; higher resolution simply increases the size of the response function matrix. Initial results from a series of experiments with multiple identical discharges show that the emission from C II and C III, which appears along the inner scrape-off layer above and below the X point during ELMing H mode, moves outward and becomes localized near the X point in radiative divertor operation induced by deuterium injection. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1201-1204 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A 48-channel platinum-foil bolometer system on DIII-D was installed to achieve better spatial and temporal resolution of the radiated power in diverted discharges. Two 24-channel arrays provide complete plasma coverage with optimized views of the divertor. The divertor radiation profile was measured for a series of radiative divertor and power balance experiments. A significant change in the magnitude and distribution of divertor radiation with heavy gas puffing was observed. Unfolding the radiation profile with only two views requires one to treat the core and divertor radiation separately. The core radiation is fitted to a function of magnetic flux and is then subtracted from the divertor viewing chords. The divertor profile is then fit to a 2D spline as a function of magnetic flux and distance from divertor floor. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 664-664 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A 48-channel platinum-foil bolometer system on DIII-D was installed to achieve better spatial and temporal resolution of the radiated power in diverted discharges. Two 24-channel arrays provide complete plasma coverage with optimized views of the divertor. The divertor radiation profile was measured for a series of radiative divertor and power balance experiments. A significant change in the magnitude and distribution of divertor radiation with heavy gas puffing was observed. Unfolding the radiation profile with only two views requires one to treat the core and divertor radiation separately. The core radiation is fitted to a function of magnetic flux and is then subtracted from the divertor viewing chords. The divertor profile is then fit to a 2D spline as a function of magnetic flux and distance from divertor floor. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3178-3180 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 6–8×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. We report the electronic and transformation characteristics of an α-particle irradiation-induced defect Hα2 in epitaxially grown p-Si with metastable properties. The energy level and apparent capture cross section, as determined by deep-level transient spectroscopy, are Ev+0.43 eV and 1.4×10−15 cm2, respectively. This defect can be removed and re-introduced using a conventional bias-on/off cooling technique. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1973-1976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We employed capacitance-voltage (C–V) measurements to determine the free-carrier concentration changes in n-GaAs after processing it in a He plasma, and deep-level transient spectroscopy (DLTS) to study the electrical properties of the plasma-induced defects. C–V measurements indicated that He-plasma processing resulted in a strong carrier reduction up to 1 μm below the GaAs surface. DLTS showed that He-ion processing introduced several prominent defects, including the frequently studied radiation-induced defects E1 and E2, associated with VAs. Current-voltage measurements demonstrated that the He-plasma processing inhibits the fabrication of high barrier Schottky diodes on n-GaAs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5576-5578 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxially grown n-Si was bombarded with low-energy (1 keV) He ions. Deep level transient spectroscopy revealed that this introduced four prominent defects with energy levels at 0.14, 0.20, 0.30, and 0.55 eV, respectively, below the conduction band. The electronic properties and annealing behavior of these defects are different to those of the main defects, namely, divacancies (V2) and vacancy-phosphorous centers, observed after 5.4 MeV He-ion bombardment of the same material. We propose that, except for the defect with an energy level at Ec−0.14 eV, the defects introduced by 1 keV He-ion bombardment of n-Si may be related to: (1) vacancy clusters larger than divacancies, or (2) incorporation of He and H into V2 or higher-order vacancy clusters. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 668-670 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We employed deep-level transient spectroscopy to determine the electrical properties of defects introduced in epitaxially grown n-GaAs during dry etching in a SiCl4 plasma at different rf powers and plasma pressures. We found that SiCl4 etching introduced two prominent defects, one of which is metastable. Current–voltage measurements demonstrated that high barrier Schottky barrier diodes can be fabricated on SiCl4-etched n-GaAs surfaces for all power and plasma pressure conditions investigated. The defect concentration decreased and the diode quality improved when etching at lower rf power and higher plasma pressure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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