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  • 1990-1994  (16)
  • 1992  (16)
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  • 1990-1994  (16)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1446-1453 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphic diamond films can be grown in an ultrahigh vacuum environment free from hydrogen with a laser plasma discharge source. This technique produces films that adhere more readily to materials for which there are important applications as protective coatings. In this work adhesion and mechanical properties of amorphic diamond films have been examined. A beam bending method has been used to measure the internal stress and a relatively low value of compressive stress was found. The dependence of stress on the laser intensities at the graphite ablation target has been studied. Analyses of these films on silicon, SiO2, ZnS, and TiAl6V4 by Rutherford backscattering spectrometry show significant interfacial layers with compositions of SiC, C0.5SiO2, C2.5ZnS, and C0.62Ti0.35Al0.05V0.02, respectively. Adhesion properties on ZnS and other substrates have also been examined for harsh environments. The mechanical properties of hardness, Young's modulus, and stiffness have been obtained with a nanoindentation technique. These results together with the minimal amount of hydrogen in our process, make amorphic diamond an excellent candidate for direct deposition on several substrates including ZnS.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1049-1051 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280 °C appeared to have an optimum crystal perfection at a substrate temperature of about 245 °C. These results also indicated that the CdTe films grown above 245 °C contained a significant problem due to interdiffusion from the InSb substrates during the growth.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 239-245 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experiments have identified the microstructure of amorphic diamond with a model of packed nodules of amorphous diamond expected theoretically. However, this success has left in doubt the relationship of amorphic diamond to other noncrystalline forms of carbon. This work reports the comparative examinations of the microstructures of samples of amorphic diamond, i-C, and amorphous carbon. Four distinct morphologies were found that correlated closely with the energy densities used in preparing the different materials.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3260-3265 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of amorphic diamond can be deposited from laser plasma ions without the use of catalysts such as hydrogen or fluorine. Prepared without columnar patterns of growth, the layers of this material have been reported to have "bulk'' values of mechanical properties that have suggested their usage as protective coatings for metals. Described here is a study of the bonding and properties realized in one such example, the deposition of amorphic diamond on titanium. Measurements with Rutherford backscattering spectrometry and transmission electron microscopy showed that the diamond coatings deposited from laser plasmas were chemically bonded to Ti substrates in 100–200-A(ring)-thick interfacial layers containing some crystalline precipitates of TiC. Resistance to wear was estimated with a modified sand blaster and in all cases the coating was worn away without any rupture or deterioration of the bonding layer. Such wear was greatly reduced and lifetimes of the coated samples were increased by a factor of better than 300 with only 2.7 μm of amorphic diamond.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A 20-channel grating polychromator has been used to study intense bursts of electron cyclotron emission (ECE) from TFTR deuterium plasmas predominantly heated by 90–110-keV neutral beams (Pinj/Poh(approximately-greater-than)30). The ECE bursts have a duration of 20–150 μs and are usually seen 300–500 ms after the start of neutral beam injection, when the stored energy and neutron production are collapsing or rolling over. In most cases the ECE bursts have Δf/f∼0.2–0.5, if this frequency spread is due entirely to relativistic broadening it implies an electron energy of 10–100 keV (Core electron temperatures in these plasmas are typically 7–12 keV). The ECE bursts are often correlated with ELM activity during limiter H modes and appear to occur at the beginning of the rise in the Dα signal. In some instances the spectral width of the ECE burst is narrow enough (Δf/f∼0.1) to allow identification of the origin of the emission, in these cases the source appears to be within 0.2 m of the plasma edge and the ECE burst exhibits a delay characteristic of an outwardly directed velocity of 2–3×103 m/s. This work is supported by U.S. Department of Energy Contract No. DE-AC02-76-CHO-3073.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A large-angle, 60-GHz collective Thomson scattering (CTS) diagnostic system for localized measurements of DT alpha-particle velocity distribution and fraction is being implemented on TFTR. Calculations of expected CTS spectra, signal-to-noise ratio per receiver channel, and estimated error in determining the temperature and fraction of alpha particles are being carried out. The experimental spectra are simulated by adding noise to the theoretical calculation by a Monte Carlo technique. Error analysis is then performed by using a relative intensity calibrated nonlinear curve fitting code to calculate the desired plasma parameters (Ti, Tα, nα/ni). Simulation results indicate that expected background emission of 20 eV during Supershot in TFTR poses no problem to the experiment. Also short integration times (〈10 ms) can be used to resolve the energetic ion features, thus offering a possibility for the study of temporal evolution of energetic ion velocity distribution during a single plasma shot.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In D-T plasmas, the understanding of the physics of confined α particles is extremely valuable for the future fusion plasma device. Among the various proposed α diagnostics, an X-mode collective Thomson scattering system employing a high-power gyrotron source (P(approximately-equal-to)200 kW, f=60 GHz, pulse length (approximately-equal-to)0.5 s, and modulation frequency=10–25 kHz) is being designed for TFTR. The detailed description of the gyrotron source, transmission lines, optical designs, beam and viewing dump design, and receiver system will be presented in this paper. In particular, the test results of the beam and viewing dump indicate that the stray light can be reduced by 60 dB. The background emission level (∼20 eV) near 60-GHz range during high Q discharge may also be reduced with beam and viewing dump further. The optical system is designed to measure the radial profile of α particles and to orient the incident wavevector (k0) to test the electromagnetic effects of the scattered spectrum. Prior to the study of α physics in D-T plasmas, this scattering system will be used to measure not only a bulk ion temperature but also the scattered spectrum due to fast ions produced by NB and ICRF heating in TFTR. This work was supported by the U.S. Department of Energy Contract No. DE-AC02-76-CHO-3073.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In TFTR plasmas, reliable and accurate time-dependent electron density profiles are routinely available via an Abel inversion of interferometry measurements [H. Park, Plasma Phys. Controlled Fusion 31, 2035 (1989)]. This technique does not require constancy of density on a equiflux surface and mild deviations of the flux surfaces from a circular shape are accommodated through analytic approximations. However, when the flux surfaces become extremely noncircular as the plasma β is increased significantly, the inverted profiles are not consistent with the Thomson scattering measurements. In order to obtain accurate time-dependent density profiles in high-β plasmas, detailed flux surface information from magnetic measurements must be used to invert the interferometric measurements. The basic inversion process is similar but the scrape-off layer treatment is different when an X point is introduced on the high field side. In this paper, we present a comparison between the inverted profiles obtained with the flux-surface data and with the analytic method. This work supported by U. S. Department of Energy Contract No. DE-AC02-76-CHO-3073.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Toroidal Alfvén eigenmodes (TAE) were excited by the energetic neutral beam ions tangentially injected into plasmas at low magnetic field in the Tokamak Fusion Test Reactor (TFTR) [Proceedings of the 11th International Conference on Plasma Physics and Controlled Fusion Research (IAEA, Vienna, 1987), Vol. 1, p. 51]. The injection velocities were comparable to the Alfvén speed. The modes were identified by measurements from Mirnov coils and beam emission spectroscopy (BES). TAE modes appear in bursts whose repetition rate increases with beam power. The neutron emission rate exhibits sawtoothlike behavior and the crashes always coincide with TAE bursts. This indicates ejection of fast ions from the plasma until these modes are stabilized. The dynamics of growth and stabilization were investigated at various plasma currents and magnetic fields. The results indicate that the instability can effectively clamp the number of energetic ions in the plasmas. The observed instability threshold is discussed in light of recent theories. In addition to these TAE modes, intermittent oscillations at three times the fundamental TAE frequency were observed by Mirnov coils, but no corresponding signal was found in BES. It appears that these high-frequency oscillations do not have a direct effect on the plasma neutron source strength.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1101-1103 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p-InSb (111) orientation substrates in the growth temperature range between 200 and 280 °C. Raman spectroscopy showed the optical phonon modes of the CdTe thin films and the formation of an indium telluride interfacial layer in the CdTe/InSb heterostructures. The stoichiometry of the CdTe/InSb heterostructures was observed by the Auger electron spectroscopy, and Auger depth profiles also demonstrated that the CdTe/InSb heterointerface was not abrupt. The results indicated that the films grown at about 265 °C posed a significant problem due to interdiffusion from the InSb substrates during the growth.
    Type of Medium: Electronic Resource
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