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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 482-484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of CuInS2 thin films and solar cells is investigated as a function of postdeposition treatments for different temperatures and excitation intensities. Annealing in hydrogen atmosphere causes an increase of PL intensity at 1.445 eV by more than a factor of 100, while subsequent annealing in oxygen or air ambient passivates this transition, which is ascribed to a donor-acceptor pair recombination between a sulphur vacancy and a copper vacancy. A defect mechanism is suggested that assumes the passivation of sulphur vacancies by oxygen in grain surfaces which can be activated by hydrogen annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119585
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  • 2
    Electronic Resource
    Electronic Resource
    Lattice defects in cadmium studied by the angular correlation method (1979)
    Springer
    The European physical journal 33 (1979), S. 155-162 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The perturbed angular correlation of the 173 keV—247 keVγ-γ-cascade in111Cd was measured for proton-irradiated and quenched cadmium as a function of the annealing temperature. Three distinct defect configurations were identified by the quadrupole interaction frequencies:D 1 with $$\left| {v_Q } \right| = \left| {\frac{{eQV_{zz} }}{h}} \right| = 103\left( 3 \right)$$ MHz visible for annealing temperaturesT A between 110 K and 130 K,D 2 with |v Q | between 4 and 22 MHz observed for 110 K ≦T A ≦150 K, andD 3 with no electric field gradient. The fractionD 3 is seen from 77 K to room temperature. The defect configurationsD 1 andD 2 are of vacancy type. It is argued thatD 1 originates from simple defect structures (probably mono- or divacancies) whileD 2 is attributed to small vacancy agglomerates. Because of its larger stability,D 3 is ascribed to defect loops. The experiment shows clearly that a vacancy-like defect is mobile in recovery stage III in Cd.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01323688
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  • 3
    Electronic Resource
    Electronic Resource
    Impurity-defect configurations in ion-irradiated copper studied by the DPAC-technique with111In (1978)
    Springer
    The European physical journal 32 (1978), S. 59-66 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The structure and dynamics of lattice defects in copper are investigated. The defects have been produced by irradiation with heavy ions of 350 keV between 85 K and 300 K. Three different defect configurations are distinguished by the time differential perturbed angular correlation technique (DPAC) with111In as radioactive probe. Their electric quadrupole coupling constantsν Q =e 2 Qq zz /h areν Q1=116(2)MHz,ν Q2=181(3)MHz andν Q3=52(1)MHz. The defects characterized byν Q1 andν Q2 are observed in the temperature range of recovery stage III. The appearance ofν Q3 is closely correlated with recovery stage V. The symmetry axis of the electric field gradient associated with this defect-111In configuration points along a crystallographic 〈111〉 direction. We attribute this defect to a planar faulted loop, presumably of vacancy type. The influence of irradiating particles and dose on the defect configurations is analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01322187
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 79.20.Nc ; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540112
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  • 5
    Electronic Resource
    Electronic Resource
    Electrically conducting ion tracks in diamond-like carbon films for field emission (1999)
    Springer
    Applied physics 69 (1999), S. 239-240 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Jh; 73.61.Cw; 79.70.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation. The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration. The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM). These conducting tracks are of possible use in field emission applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050996
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.70.Tm; 79.20.Nc; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the 15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540112
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  • 7
    Electronic Resource
    Electronic Resource
    Atomic nitrogen in C60:N@C60 (1998)
    Springer
    Applied physics 66 (1998), S. 287-292 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 36.40.Cg, 61.46.+w, 76.30.Rn, 82.80.Bg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 60 (atomic nitrogen inside C60) is produced by ion implantation. Two different production methods are employed: Kaufman ion source and glow discharge. After the bombarded material is dissolved in toluene or CS2 and is filtered, several milligrams of C60 containing N@C60 in a concentration of 10-4 to 10-5 are obtained. N@C60 gives a very clear hyperfine-split electron paramagnetic resonance signal. The most prominent features of N@C60 are: (i) Nitrogen in C60 keeps its atomic electronic configuration and occupies the on-center position. (ii) N@C60 is stable at ambient conditions, the thermal instability starts at 260 °C. (iii) The complex survives exohedral addition reactions and is a sensitive detector of cage distortions caused by addends. (iv) C60 and N@C60 exhibit slightly different retention times in column chromatography, thus permitting an enrichment of N@C60 by this method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050668
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  • 8
    Electronic Resource
    Electronic Resource
    Point defect trapping at111In in copper after ion implantation (1978)
    Springer
    Hyperfine interactions 4 (1978), S. 706-709 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01021917
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of the electric field gradient in radiation damaged copper (1978)
    Springer
    Hyperfine interactions 4 (1978), S. 585-588 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01021895
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  • 10
    Electronic Resource
    Electronic Resource
    Anomalous muonium in germanium (1979)
    Springer
    Hyperfine interactions 6 (1979), S. 177-180 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01028789
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