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  • 1
    Electronic Resource
    Electronic Resource
    Utilisation of organic nitrogen and phosphorus sources by mycorrhizal endophytes of Woollsia pungens (Cav.) F. Muell. (Epacridaceae) (1999)
    Springer
    Mycorrhiza 8 (1999), S. 181-187 
    Details
    ISSN: 1432-1890
    Keywords: Key words Ericaceae ; Hymenoscyphus ericae ; Ericoid mycorrhiza ; Plant nutrition ; Ascomycetes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  The ability of four ericoid mycorrhizal endophytes isolated from roots of Woollsia pungens (Cav.) F. Muell. (Epacridaceae) to utilise organic forms of nitrogen and phosphorus during growth in axenic culture was assessed. All isolates were able to utilise glutamine, arginine and bovine serum albumin (BSA), along with NH4 + or NO3 –, in most cases yielding at least as much biomass as the ericoid mycorrhizal endophyte Hymenoscyphus ericae (Read) Korf & Kernan. All isolated endophytes were able to utilise BSA, arginine and glutamine as sole sources of N and C. With the exception of a single isolate (C40), which showed little growth on glutamine, biomass yields on glutamine as the sole N and C source was significantly greater for all isolates than on either of the other two organic N sources. Two isolates from W. pungens (C40 and A43) utilised DNA and sodium inositol hexaphosphate as sole P sources, in each case yielding significantly more biomass than H. ericae. The results suggest that mycorrhizal endophytes from epacrid plant hosts and those from ericaceous hosts have similar abilities to utilise organic forms of N and P.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005720050232
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  • 2
    Electronic Resource
    Electronic Resource
    Carrier Localization in Gallium Nitride (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 31-36 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.196-201.31.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Semiempirical method for calculating structure and band gap of semiconducting polymers (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 10347-10353 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A semiempirical method that yields accurate band gaps and atomic positions in sp2-hybridized, organic, semiconducting polymers has been obtained. This method is a tight-binding calculation where most of the parameters are determined via an ab initio local density approximation method leaving only π–π interactions to be adjusted empirically. Once fitted for one or two systems, the method can be applied to other similar systems without further adjustment. Accurate results have been demonstrated for a number of semiconducting polymers that contain C, S, N, and H. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480383
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  • 4
    Electronic Resource
    Electronic Resource
    p-type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2815-2817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of in situ As doped Hg1−xCdxTe by molecular beam epitaxy and activation of As at 250 °C is reported. We have used elemental arsenic, As4, as the p-type dopant source. The activation of As was observed in the 1016–1018 cm−3 range after a low temperature annealing step at 250 °C. However, for doping levels above 5×1018 cm−3, we have observed that the As activation efficiency drops. It is speculated at this time that self-compensation and formation of neutral As complexes may limit doping efficiency at very high levels. We also report our data on the structural and electrical characteristics of these As doped p-type layers using secondary ion mass spectroscopy analysis, and Hall effect measurements. An acceptor activation energy of 5.4 meV was obtained based on the dependence of the Hall coefficient on temperature. This value was attributed to singly ionized As located on a Te site (AsTe•) acting as an acceptor. A brief discussion on activation mechanism of As doped p-type HgCdTe material is also presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120144
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  • 5
    Electronic Resource
    Electronic Resource
    Exciton dynamics in a novel high-yield GaInP quantum-wire array (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2261-2263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the carrier dynamics in a spontaneously organized array of quantum wires grown by a novel technique that involves strain induced lateral ordering (SILO). Our cw–photoluminescence (PL) measurements reveal a very strong optical anisotropy associated with these wires, while the time-resolved PL measurements demonstrate a very interesting carrier dynamics due to localization of excitons and slow interwire scattering. The high quality and freedom from defects of the SILO multiple quantum wire array are nicely borne out by the long decay photoluminescence times (∼4 ns). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117147
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  • 6
    Electronic Resource
    Electronic Resource
    Interdiffusion of lateral composition modulated (GaP)2/(InP)2 short-period superlattices with different encapsulants (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1233-1235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion of lateral composition modulated (GaP)2/(InP) 2 short-period superlattices (SPSs) is reported. The lateral composition modulation is achieved by the strain induced lateral layer ordering (SILO) process. A blueshift in the interband transition is observed by photoluminescence spectroscopy for capless and SiO 2 encapsulated annealed SPSs (800 °C, 5.5 h), while the intensity and wavelength of Si3N4 encapsulated annealed SPSs are only slightly perturbed. From transmission electron microscopy, capless annealed SPSs (800 °C, 5.5 h) retain their lateral composition modulation, however, the (001/2) satellite reflections disappear. For long anneal times (48 h), the interband transition corresponds to that of a In0.50Ga 0.50P alloy, suggesting the lateral composition modulation disappears. The observed lateral interdiffusion coefficient exceeds the vertical by a factor of ∼30, suggesting SPS interdiffusion is enhanced by native point defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362860
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  • 7
    Electronic Resource
    Electronic Resource
    Near band edge absorption spectra of narrow-gap III–V semiconductor alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4045-4048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near band edge absorption spectra of the narrow-gap semiconductor alloys InxTl1−xP, InxTl1−xAs, and InxTl1−xSb were calculated and compared with those of HgxCd1−xTe. To test accuracy, we compared the calculated absorption spectra in GaAs with experimental results and found good agreement. Within 50 meV from the absorption edge, the absorption coeffi cient of InxTl1−xP is found to have about the same magnitude as that in HgxCd1−xTe and GaAs, whereas that in InxTl1−xAs and InxTl1−xSb is much smaller. This result and other merits found from previous studies indicate that InxTl1−xP has a potential to compete favorably with HgxCd1−xTe for long-wavelength infrared applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363364
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  • 8
    Electronic Resource
    Electronic Resource
    Visible wavelength (6470 A(ring)) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7124-7129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown GaxIn1−xP multiple quantum wires (MQWR) on ternary GaAs0.66P0.34 substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of ∼300 A(ring). Two dimensions of quantum confinement were obtained by surrounding the laterally confined GaxIn1−xP regions by layers of higher-energy-gap Al0.15Ga0.53In0.32P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the GaxIn1−xP MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363725
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of substrate misorientation on the growth of GaxIn1−xP lateral quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2694-2696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effects of misoriented GaAs substrates and varied substrate temperatures on the formation of GaxIn1−xP lateral quantum wells (LQWs) by the strain-induced lateral-layer ordering (SILO) process. Nominally [001] GaAs on-axis substrates, [001] substrates cut 2° off toward the [110] direction, and [001] substrates cut 2° off toward the [1¯10] direction were used to simultaneously grow LQWs. The samples were characterized using plan-view and cross-sectional transmission electron microscopy and polarized photoluminescence spectroscopy. We found that regardless of the substrate misorientation or substrate growth temperature, the SILO process induced LQWs always formed along the [1¯10] direction; primarily determined by the direction of the group-V dimer bonds on the surface during growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113491
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of temperature-insensitive emission wavelength in GaInAs strained multiple-quantum-wire heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2386-2388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the photoluminescence (PL) properties of GaxIn1−xAs strained multiple-quantum-wire (MQWR) heterostructures formed in situ by the strain-induced lateral-layer ordering (SILO) process. Samples with moderately strained MQWR active regions demonstrate a negligible variance in emitted PL spectra with respect to temperature. The net temperature dependence of PL wavelength for these samples is less than 0.1 A(ring)/°C between 77 and 300 K. For MQWR samples with stronger lateral composition modulation, the PL peak wavelength blue shifts with increasing temperature. The SILO process induced multiaxial strain in the (GaAs)2/(InAs)2.2 short-period-superlattice active region is responsible for this temperature insensitivity and blueshift of PL wavelength with temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116142
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