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  • 1
    Electronic Resource
    Electronic Resource
    Effect of gravity on the deposition of colloidal particles on a planar surface (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 8605-8612 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A steady state convective-diffusion equation is solved using a collocation method to find the concentration profile and flux of adsorbing particles near a particle adsorbed on the plane surface. At small values of the gravity number, NG=πd4Δρ/6kT, the concentration profile and flux vary slowly near the preadsorbed particle, while they are highly nonuniform at large values of NG. The effect of the position of the system boundary on the collocation calculation is discussed and it is shown how the concept of flux balance may be used to improve the accuracy of the results. Finally, we develop two fitting functions at high and low values of NG, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480201
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  • 2
    Electronic Resource
    Electronic Resource
    Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 876-878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm2, one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of ∼2.05 μm, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm−1. Single-ended cw power of 1 W is obtained for a 100-μm aperture. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120922
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  • 3
    Electronic Resource
    Electronic Resource
    3.9-μm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved temperature characteristics (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2251-2253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterostructure diode lasers emitting at ∼3.9 μm have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single-ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular-beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/cm2 obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112779
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  • 4
    Electronic Resource
    Electronic Resource
    InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 μm (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 833-835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-heterostructure InAsSb/AlAsSb diode lasers emitting at 4 μm have been fabricated. The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices exhibit continuous wave operation at temperatures up to 80 K, and pulsed operation up to 155 K. The lowest threshold current density is 33 A/cm2 obtained at 50 K, but the characteristic temperature is only 17 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111029
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  • 5
    Electronic Resource
    Electronic Resource
    Transverse polaron bandwidth in trans-polyacetylene (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 2827-2830 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100186a009
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  • 6
    Electronic Resource
    Electronic Resource
    Coherent continuous wave operation of 10×10×2 grating-surface-emitting diode laser array in a ring configuration (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7645-7647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coherent cw operation of a 10×10×2 grating-surface-emitting diode laser array in a ring configuration is demonstrated. At near twice the threshold current, the ring array exhibits a high degree of spatial coherence (an average of 86%) between emitting grating sections and a narrow linewidth of 28 MHz. The far field fringe visibility is 80% and 88% in the lateral and longitudinal directions, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350363
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1916-1918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346583
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  • 8
    Electronic Resource
    Electronic Resource
    Frequency dependence of the plasma density for helicon plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1463-1467 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations of plasma density are investigated as a function of frequency of rf power in a helicon plasma source. Abrupt, almost step-like changes in the plasma density are observed during the frequency scans under various conditions of the input rf power, the argon gas pressure, and the magnetic field. It is found that the transition frequencies shift to the lower value region as the input rf power and/or the argon gas pressure is increased, and to the higher value region as the magnetic field is increased. The observed density transitions are compared with semianalytical calculations based on the power balance relation and it has been shown that the results are in good agreement. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872325
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  • 9
    Electronic Resource
    Electronic Resource
    First-layer formation in ballistic deposition of spherical particles: Kinetics and structure (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 9296-9303 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a computer simulation and theoretical study of a ballistic deposition process in which spheres are incident on a planar surface. Each incoming sphere follows a path of steepest descent which may involve rolling over the surface of preadsorbed spheres. All particles reaching a stable, elevated position are removed. The frequency of the various rolling mechanisms are evaluated as a function of coverage. The addition mechanism generates clusters of connected spheres by accretion and coalescence. We evaluate the dependence of the cluster size distribution and coalescence probability on coverage. Various peaks in the radial distribution function of the deposited layer provide a signature for the deposition mechanism. The asymptotic approach to saturation is shown to be of the form θ∞−θ(t) ∝exp[−(4/π)Smt]/t2, where Sm=(square root of)3/2 is the smallest possible target area. The expression is shown to be consistent with the simulation results. Interpolants, which accurately describe the time-dependent coverage over the entire coverage range, are developed based on the exact expressions for the asymptotic and low coverage kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465545
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  • 10
    Electronic Resource
    Electronic Resource
    Mixed convection flow in a curved annulus: Effect of radius ratio (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 1843-1845 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fully developed mixed convection flow in a loosely curved annulus is examined. Analytic solutions in power series form, where the radius ratio is properly taken into account, are derived. It is found that the power series solution is in good agreement with the numerical solution. It is also illustrated that the dimensionless numbers based on hydraulic radius are adequate to characterize the inclination of the secondary flow cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.858806
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