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  • 1990-1994  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    Semi-insulating properties and photoluminescence quenching in Cu-diffused InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4546-4550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of high-resistivity InP with resistivity up to 107 Ω cm, obtained by thermal diffusion of Cu at 800 °C for over 20 h into undoped and p-type InP samples, are investigated. Hall-effect measurements showed that the compensation mechanism in the slowly cooled sample is different from that in the quickly cooled samples. Photoluminescence was quenched in the quickly cooled samples when annealed at 350 °C and the anneal temperature at which the sample resistivity and carrier mobility reached the maximum. It is shown that the electrical compensation in the slowly cooled sample could be understood by a simple deep-level compensation model. However, the semi-insulating behavior of the quickly cooled samples appears to be consistent with an internal Schottky depletion model associated with the Cu precipitates. The photoluminescence quenching is due to the Cu precipitates acting as effective nonradiative recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354372
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Identification of chemi-ions formed by reactions of deuterated fuels in the reflected shock zone (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 3333-3335 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100371a025
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A simple and reliable method of thermoelectic effect spectroscopy for semi-insulating III-V semiconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1951-1954 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a simpler and more reliable method of thermoelectric effect spectroscopy (TEES), eliminating the second heater in the technique. We have applied this method to the deep level studies in the semi-insulating undoped or Cr-doped GaAs materials and in the GaAs epitaxial layers grown at a low temperature by molecular beam epitaxy. We have found that the electrical contacts made on front and back surfaces of the sample are more reliable for the TEES measurement than both contacts made on the same surface. In this contact arrangement, the temperature difference of about 1–2 K between the back and front surfaces is enough to produce a clear and reliable TEES data, without the need for a second heater. The results obtained by TEES are consistent with the results obtained by photoinduced transient spectroscopy (PITS) and by thermally stimulated current (TSC) measurements. The TEES results clearly distinguish between the electron traps and the hole traps. We discuss the results on the various semi-insulating GaAs samples and the advantages and limitations of the TEES technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142398
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Shallow levels, deep levels and electrical characteristics in Zn-doped GaInP/InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3711-3716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaxIn1−xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1−xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at EV+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345011
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Transient behavior and memory effect of a PbZrxTi1−xO3/YBa2Cu3O7−x three-terminal device (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 953-955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient behavior of a ferroelectric PbZrxTi1−xO3 and superconducting YBa2Cu3O7−x three-terminal device has been investigated. Four-state behavior, that is, two polarization states of the PbZrxTi1−xO3 gate and superconducting and normal states of the YBa2Cu3O7−x layer, has been observed. It was shown that the biased superconducting channel can be switched from superconducting state to the normal state by the flowing charge during the polarization switching of the PbZrxTi1−xO3 gate. The nonvolatility of this device based on the different polarization states of the ferroelectric gate has also been demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112159
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Smooth etching of single crystal 6H-SiC in an electron cyclotron resonance plasma reactor (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2315-2317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal 6H-SiC has been etched using a CF4/O2 gas mixture in an electron cyclotron resonance (ECR) plasma reactor. ECR etching results in SiC surfaces which are extremely smooth, without the problematic micromasking effects which have been reported to result from reactive ion etching in capacitively coupled radio-frequency plasma reactors. The effects of microwave power, total pressure, substrate temperature, and substrate bias on the etch rate, surface morphology, etch profile, and etch selectivity have been evaluated. The etch rate increases with increasing power and bias, and decreasing pressure. However, high biases lead to enhanced etching in regions adjacent to sidewall features. Improved etch profiles and selectivity are obtained with lower applied substrate bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111629
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Interface traps and interface recombination in AlGaAs/GaAs quantum well laser diodes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 428-430 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage characteristics and deep traps of various GaAs/AlGaAs graded-index separate confinement heterostructure quantum well laser diode structures are studied as a function of the growth temperature and threshold current. It is shown that the interface nonradiative recombination processes cause a high threshold current. An impurity-related deep level with activation energy Ea=0.48 eV at the interface region and an interface state with wide energy distribution were found in the high threshold current diodes. The current-voltage characteristics show that interface recombination, rather than bulk recombination, is the dominant carrier transport process in the diodes and is responsible for the high threshold current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106624
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    A study on one-dimensional consolidation of layered systems (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    International Journal for Numerical and Analytical Methods in Geomechanics 16 (1992), S. 815-831 
    Details
    ISSN: 0363-9061
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Architecture, Civil Engineering, Surveying , Geosciences
    Notes: A general analytical solution, which is more explicit than the one given by Schiffman and Stein,1 for the problem of one-dimensional consolidation of layered soils is presented. A relevant computer program is developed and the computed results on some examples are included. From these results, an in-depth study on the one-dimensional consolidation behaviour of layered systems is then made. It is demonstrated through these examples that both the solution technique and the computer program developed are very efficient. It is found that the effects of coefficients of permeability and volume compressibility of soil on the consolidation of layered systems are different and cannot be embodied into the coefficient of consolidation of soil. The stiffness of soil layer also plays an important role on the rate of consolidation.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nag.1610161104
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    Paper (German National Licenses)
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