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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of anodized silicon carbide (1997)
    Springer
    Semiconductors 31 (1997), S. 202-203 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The luminescence of single-crystalline 6H-SiC plates after electrochemical etching has been investigated. The photoluminescence spectrum was found to change strongly after etching; the decay times of separate bands were determined. Just as in the case of silicon, the change in the photoluminescence could be due to the formation of nanostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187109
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation and photosensitivity of heterostructures based on anodized silicon carbide (1998)
    Springer
    Semiconductors 32 (1998), S. 295-296 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Heterojunctions were obained by mechanical clamping of anodized 6H-SiC wafers to wafers of layered III–VI semiconductors (InSe and GaSe) at 300 K. On account of the high degree of perfection of the cleavage surfaces, a strong and quite perfect electrical contact is formed. The photo-emf spectrum of the heterojunctions has the form of a wide band. The longwavelength edge of this band is due to the narrow-gap component and the short-wavelength edge is due to the narrow-gap component and the short-wavelength edge is due to absorption in SiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187349
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+nn+ structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5464-5468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron diffusion can be used to compensate the n-type layer of a p+nn+ 6H-silicon carbide structure in order to increase its high-voltage capabilities. Measurements under reverse biases for a current range from 10 to 500 μA show that this process is very efficient for working temperatures about 300 K. Indeed we obtained a voltage of 670 V for a reverse current of 10 μA instead of the 120 V calculated for a structure without boron diffusion. Nevertheless, the breakdown voltage decreases rapidly when the temperature increases. Capacitance measurements show that the measured doping level in the n-type layer evolves in the same way as the temperature (it ranges from 1013 cm−3 at 300 K to 1017 cm−3 at 500 K). A great concentration of boron seems to be responsible for this doping variation with temperature. Admittance spectroscopy reveals the presence of D centers at 0.62 eV above the valence band associated to boron at concentration similar or superior to nitrogen concentration in the n-type layer. The increase of the doping level with the temperature is responsible for this decrease of the breakdown voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362736
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  • 4
    Electronic Resource
    Electronic Resource
    Metal–n-6H–SiC surface barrier height—Experimental data and description in the traditional terms (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5511-5514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work compares our experimental data on surface barrier height in structures metal–n-6H–SiC for several metals (Al, Au, Mo, Cr) with other data available and with classical models of surface barrier formation. We observed decreasing of barrier height with increasing of donors concentration for the structures Au–n-6H–SiC, Mo–n-6H–SiC and Al–n-6H–SiC. We estimate the average surface energy level for (0001)-Si-faced n-6H–SiC, appearing in capacitance–voltage (C–V) measurements, to be about 0.3Eg at room temperature (Eg is the energy band gap) and corresponding surface states density to be about 1013 cm−2 eV−1, based both on our data and data of other authors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359668
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  • 5
    Electronic Resource
    Electronic Resource
    Design aspects and status of construction of the mVINIS ion source : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 679-681 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The mVINIS ion source is a multiply charged heavy ion source based on the electron cyclotron resonance effect. This machine is a part of the Tesla Accelerator Installation, an ion accelerator facility whose construction has been going on at the VINCA Institute of Nuclear Sciences in Belgrade, Yugoslavia. mVINIS is an advanced version of the Dubna electron cyclotron resonance ion source 14-2, constructed at the Joint Institute for Nuclear Research (JINR) in Dubna, Russia. It is a complete injector, consisting of an ECR ion source, focusing and steering elements, an analyzing magnet, a vacuum system, and an ion beam diagnostic system. The main parts of mVINIS have been designed and manufactured at JINR, while the vacuum equipment, power supplies, ion beam diagnostics, and control system were purchased elsewhere. The preliminary testing (magnetic field measurements, vacuum testing, testing of the ECR ion source) has been performed at JINR, and the final assembly of the mVINIS and measurement of the ion beam parameters have been going on at the VINCA Institute. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148568
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  • 6
    Electronic Resource
    Electronic Resource
    Performance of the ion source DECRIS-14-2 : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 662-664 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Dubna electron cyclotron resonance ion source DECRIS-14-2 was put into regular operation at the U-400M cyclotron in the beginning of 1995. During the past two years the source has produced a wide range of ion beams for physics experiments as well as for the testing of the beam transport lines and the cyclotron itself. Ions of gases, such as He, N, O, Ne, and Ar were successfully delivered and accelerated in the cyclotron. The ion source has shown good performance especially in the case of middle charge state ions (e.g., 600 eμA of Ar8+) as well as high operational reliability. Significant progress in metal ion production has been achieved by introducing a new microoven for the evaporation of metal samples. This microoven in combination with an additional tantalum sheet installed inside the discharge chamber has made it possible to obtain Li2+ ion beams in excess of 200 eμA. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148567
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  • 7
    Electronic Resource
    Electronic Resource
    Dubna electron cyclotron resonance ion source (DECRIS)-14-2: Results of the first operation : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 980-982 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The new electron cyclotron resonance (ECR) ion source, the Dubna electron cyclotron resonance ion source (DECRIS)-14-2, was designed and built for use with the isochronous cyclotron U-400M. The source assembly was completely finished by the end of 1994 and in January of 1995 the source was tested on the ECR-test bench. In February the source was installed in the cyclotron and in April the first physical experiment on the accelerated beam was carried out. Here we present some design aspects of this source and the results of the first operation on the cyclotron. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146788
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  • 8
    Electronic Resource
    Electronic Resource
    Growth and excitonic properties of single fractional monolayer CdSe/ZnSe structures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3168-3171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single fractional monolayer (FM) CdSe/ZnSe structures have been grown by molecular beam epitaxy (MBE), employing both conventional MBE and migration-enhanced epitaxy (MEE). A precise calibration of the FM mean thickness in the range of 0.15–3.0 ML has been performed for both techniques, revealing more than a 3.5 times lower Cd incorporation ability for the MEE mode at the same Cd and Se incident fluxes. Steady-state and time-resolved photoluminescence spectroscopy is used to characterize the intrinsic morphology of the CdSe FMs, with a special emphasis on the submonolayer thickness range. Both MBE and MEE grown samples exhibit inhomogeneity of the excitonic system, which can be explained by coexistence of a homogeneous alloylike layer and relatively large CdSe 2D clusters. The MEE samples display smaller fluctuations of the layer thickness and island sizes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367130
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  • 9
    Electronic Resource
    Electronic Resource
    ZnSe-based blue-green lasers with a short-period superlattice waveguide (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2104-2106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful application of alternatively strained short-period superlattices for the waveguide region of optically pumped and injection room-temperature ZnSe-based lasers operating within the 470–523 nm spectral range. The design of optically pumped ZnMgSSe/ZnSSe/ZnCdSe lasers provides extremely low threshold power densities due to the enhanced electronic and optical confinement. Room-temperature BeMgZnSe/ZnCdSe injection lasers with threshold current density of about 750 A/cm2 and characteristic temperature as high as 366 K are demonstrated. The peculiarities of carrier transport across the short-period superlattices are explained by a thermally activated mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122392
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  • 10
    Electronic Resource
    Electronic Resource
    Beiträge zu einer physiologischen Resistenztheorie der Kulturgräser (1936)
    Springer
    Planta 25 (1936), S. 84-103 
    Details
    ISSN: 1432-2048
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01909307
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