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  • 11
    Digitale Medien
    Digitale Medien
    The Treatment of Myoma (1938)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 45 (1938), S. 0 
    Details
    ISSN: 1471-0528
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1471-0528.1938.tb11166.x
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  • 12
    Digitale Medien
    Digitale Medien
    Structure and thermal stability of Cu-In precipitates and their role in the semi-insulating behavior of InP:Cu (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2545-2547 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: InP was found to be semi-insulating after Cu diffusion. This conversion of both n-InP and p-InP was ascribed to the presence of Cu-In precipitates that act as buried Schottky barriers. The thermal stability of both the precipitates and the electrical properties of InP:Cu were studied after high temperature annealing treatments. Atomic resolution microscopy was used to determine the structure of these precipitates. Diffraction studies of some of these inclusions show that they have the structure of the metallic hexagonal compound Cu16In9. The concentration of Cu-In precipitates was found to be comparable with what our calculations show would achieve intrinsic behavior due to the effect of the metallic inclusions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108121
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  • 13
    Digitale Medien
    Digitale Medien
    Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1536-1538 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The atomic structure of misfit dislocations at In0.2Ga0.8As/GaAs interfaces misoriented 2°–10° from (001) has been investigated by high-resolution electron microscopy. The misfit dislocations are predominantly dissociated 60° dislocations consisting of 90° and 30° Shockley partial dislocations and enclosed stacking faults. These dissociated 60° dislocations form increasingly asymmetrically on the different {111} glide planes as the misorientation increases. The 90° partial dislocations are not confined to the interface, but lie 0–100 A(ring) beneath it. The 30° partial dislocations, in turn, are pushed even further into the substrate.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108632
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  • 14
    Digitale Medien
    Digitale Medien
    Quantitative high resolution electron microscopy of III-V compounds: A fuzzy logic approach (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1763-1765 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In the study of interdiffusion phenomena in layered structures of III-V compounds by high resolution electron microscopy, contrast features in the micrographs can be correlated with the variation of the chemical composition of the crystals. For quantitative interpretation of the micrographs a fuzzy logic approach is adapted to extract chemical information. The linguistic variable "similarity of images'' is derived from the standard deviation (SD) of their difference patterns, which proved to be an appropriate measure. The approach developed is used to analyze simulated contrast tableaus of GaAs/P (As/P variation) and experimental micrographs of Al/GaAs (Al/Ga variation). © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114375
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  • 15
    Digitale Medien
    Digitale Medien
    Radiative recombination in type-II GaSb/GaAs quantum dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 656-658 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strained GaSb quantum dots having a staggered band lineup (type II) are formed in a GaAs matrix using molecular beam epitaxy. The dots are growing in a self-organized way on a GaAs(100) surface upon deposition of 1.2 nm GaSb followed by a GaAs cap layer. Plan-view transmission electron microscopy studies reveal well developed rectangular-shaped GaSb islands with a lateral extension of ∼20 nm. Intense photoluminescence (PL) is observed at an energy lower than the GaSb wetting layer luminescence. This line is attributed to radiative recombination of 0D holes located in the GaSb dots and electrons located in the surrounding regions. The GaSb quantum dot PL dominates the spectrum up to high excitation densities and up to room temperature. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115193
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  • 16
    Digitale Medien
    Digitale Medien
    Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2798-2800 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The influence of substrate misorientation on the structure and morphology of In0.2Ga0.8As layers grown by molecular beam epitaxy on vicinal, near (001), GaAs substrates was investigated by transmission electron microscopy. The substrates were tilted at angles between 0° and 10° in 〈100〉, 〈110〉, and 〈120〉 directions. In layers which exceeded the critical thickness, networks of 60° dislocations running along the intersections of the four {111} planes with the interface were observed. Growth uniformity and anisotropy of strain relaxation were shown to depend on the type of growth steps introduced by a particular tilting direction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109213
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  • 17
    Digitale Medien
    Digitale Medien
    The contribution of vacancies to carbon out-diffusion in silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 392-394 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Diffusion of carbon is mostly assumed to be governed by carbon interstitials via the kick-out mechanism. Carbon in-diffusion experiments are associated with thermal equilibrium concentrations of point defects, whereas in the case of carbon out-diffusion a remarkable undersaturation of Si self-interstitials may develop provided the carbon concentration is several orders of magnitude over its solubility value. New carbon out-diffusion experiments demonstrate that this model qualitatively describes the observed carbon diffusion profiles. However, we demonstrate that an accurate description of the experimental profiles is only possible if the Frank–Turnbull mechanism, involving vacancies, is additionally taken into account. Detailed investigations of carbon and boron profiles in the same sample can be used to determine the splitting of the known vacancy component of the silicon self-diffusion coefficient into the vacancy diffusion coefficient and the vacancy thermal equilibrium concentration at 900 °C. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123081
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  • 18
    Digitale Medien
    Digitale Medien
    Electron-beam-enhanced precipitation in highly carbon-doped GaAs layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 409-411 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Highly carbon-doped GaAs layers grown by metalorganic vapor phase epitaxy were investigated by transmission electron microscopy (TEM). Secondary-ion-mass spectroscopy as well as Hall measurements indicated that nearly all the doping atoms incorporated are electrically active. Electron irradiation has been applied to generate point defects interacting with native defects, e.g., substitutional carbon. Owing to this irradiation periodically arranged striations perpendicular to the growth direction were induced, which were observed in situ by TEM. Furthermore, precipitates (Ø=10–15 nm) occurred incorporating noncrystalline material, which most likely is gallium. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118077
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  • 19
    Digitale Medien
    Digitale Medien
    Formation of coherent superdots using metal-organic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate direct growth of electronically coupled zero-dimensional structures forming a super-quantum dot using metal-organic chemical vapor deposition. After the first sheet with InGaAs pyramids is formed on GaAs surface, alternate short-period GaAs-InGaAs deposition leads to spontaneous formation of layered structures driven by the energetics of Stranski–Krastanow growth. As a result columnlike InGaAs structures each having a characteristic lateral size of ∼23 nm at the top and composed of many closely packed InGaAs parts are formed. The full width at half maximum of superdot luminescence of 28 meV at 8 K indicates good average uniformity of the superdot ensemble. Absorption is found to be resonant with luminescence. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117069
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  • 20
    Digitale Medien
    Digitale Medien
    Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3072-3074 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Annealing at higher temperature (700 °C) of structures with two-dimensional and three-dimensional arrays in InAs–GaAs quantum dots (QDs) results in an increase in the size and in a corresponding decrease in the indium composition of the QDs. The change in the In composition is monitored by the contrast pattern in the plan-view transmission electron microscopy (TEM) images viewed under the strong beam imaging conditions. Increase in the size of the QDs is manifested by the plan-view TEM images taken under [001] zone axis illumination as well as by the cross-section TEM images. We show that the dots maintain their geometrical shape upon annealing. Luminescence spectra demonstrate a shift of the QD luminescence peak toward higher energies with an increase in the annealing time (10–60 min) in agreement with the decrease in indium composition revealed in TEM studies. The corresponding decrease in the QD localization energy results in an effective evaporation of carriers from QDs at room temperature, and the intensity of the QD luminescence decreases, and the intensity of the wetting layer and the GaAs matrix luminescence increase with the increase in the annealing time. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116843
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