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  • 1
    Electronic Resource
    Electronic Resource
    Structures and properties of electron-beam-evaporated indium tin oxide films as studied by x-ray photoelectron spectroscopy and work-function measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4344-4350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide (ITO) films deposited on single-crystal Si wafers by the electron-beam-(EB) evaporation method have been investigated by x-ray photoelectron spectroscopy (XPS) together with work-function and resistivity measurements. The XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The amount of the crystalline phase with respect to the amorphous phase for the ITO films, deposited with the incident angle of the ITO vapor to the Si substrate θi at 0°, is smaller than that for the ITO films deposited at θi=45°. The amount of the crystalline phase hardly depends on the conditions of postdeposition heat treatments, while that of the amorphous phase increases by raising the temperature of the heat treatments. Metal indium present in the films deposited at θi=0° is transformed into amorphous indium oxide by heating at 450 °C in air. Metal tin is also present near the ITO/Si interface for the ITO films deposited at θi=0°. The work function of the ITO films deposited at θi=0° is lower by 0.8 eV in maximum than that for the films deposited at θi=45°. It is concluded that the work function of the ITO films increases not only with a decrease in the amount of metal indium and metal tin in the films but also with an increase in the amount of the crystalline ITO phase with respect to that of the amorphous phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352818
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanism of carrier transport in highly efficient solar cells having indium tin oxide/Si junctions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1736-1743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier transport mechanism of the Si solar cells having n-Si/indium tin oxide (ITO) junctions has been studied by use of the current-voltage and capacitance-voltage measurements and x-ray photoelectron spectroscopy. An 11-A(ring)-thick nonstoichiometric Si oxide layer is formed when ITO is deposited by spray pyrolysis on a Si electrode etched with hydrofluoric acid. In this case, the tunneling probability of majority carriers through the oxide layer is high, and the thermionic emission current over the energy barrier in Si takes a dominant part of the dark current. On the other hand, for a Si electrode where a Si oxide layer is intentionally interposed between ITO and Si, the thermionic emission current is suppressed, and trap-assisted multistep tunneling through the depletion layer becomes dominant. By making a mat-structure treatment on the Si surface, a solar energy conversion efficiency of 13% and the photocurrent density of 42.5 mA cm−2 were attained under AM 1 100 mW cm−2 illumination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347220
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic properties of Bi3Fe5O12 garnet (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4944-4946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonthermodynamical garnet Bi3Fe5O12 was synthesized by direct epitaxial growth via vapor phase using a reactive ion beam sputtering technique. The lattice constant was 12.631 A(ring). The saturation magnetization of the film grown onto a substrate (a=12.495 A(ring)) was 1500 G at room temperature. The uniaxial anisotropy energy was +7.2×104 erg/cm3. The conversion electron Mössbauer spectroscopy measurement indicates that the internal fields of 24d and 16a sites in the nearly lattice-matched film were 420 and 490 kOe, respectively. The internal field of the 24d site was larger by 30 kOe than that in YIG. The angle between the direction of the internal field and the film normal was 34.8°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344740
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5288-5293 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide (ITO)/silicon oxide/silicon (Si) junction solar cells were produced by depositing ITO on a thin silicon oxide-covered single-crystal Si substrate using the electron-beam evaporation method. The current-voltage (I-V) characteristics strongly depended on the incident angle (θi) of the evaporated ITO vapor to the Si substrate during the ITO deposition, as well as the post-deposition heating temperature (Th) and the kind of the ambient gases during post-deposition heat treatment. The ITO films deposited at θi=0° and treated at Th=380 °C in air formed a high-energy barrier with p-Si, and formed ohmic contact with n-Si. X-ray diffraction analysis showed that the ITO films deposited at θi=0° contained metal indium. The amount of the metal indium decreased either by reducing the deposition rate of the ITO film or by raising the substrate temperature during the ITO deposition. The ITO films deposited at θi=45° and treated at Th=350∼450 °C in hydrogen, on the other hand, formed a high-energy barrier with n Si. In this case, no metal indium was observed in the ITO films. It is concluded that the formation of the metal indium in the ITO films changes their work functions, and thus its presence strongly affects the I-V characteristics of the ITO/silicon oxide/Si solar cells. Darkening observed for the ITO films deposited at θi=0° is also attributed to the presence of the metal indium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352013
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  • 5
    Electronic Resource
    Electronic Resource
    Contour effect in metal-in-gap heads (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4869-4871 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pseudogap in a metal-in-gap head causes ripples in output spectra. This gap is a layer with poor magnetic properties at the boundary between sendust film and a ferrite core. The ripple amplitude reduces as the bonding temperature decreases. It also depends on the ferrite-core crystal orientation. We examined the diffusion at the boundary by Auger-electron spectroscopy and investigated the crystal structure of sendust films by x-ray diffraction. It is proved that diffusion causes the contour effect. The thickness of the diffusion layer at the boundary depends on bonding temperature. It is also found that the diffusion at the boundary and the crystal structures of the sendust film are independent of the crystal orientation of the ferrite cores. Computer-simulation results indicate that the contour effect is a function of the ferrite-core permeability. The permeability varies in accordance with the crystal orientation. The above explains that the contour effect depends on the ferrite-core crystal orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344762
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  • 6
    Electronic Resource
    Electronic Resource
    Low leakage current characteristics of YMnO3 on Si(111) using an ultrathin buffer layer of silicon oxynitride (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6598-6604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown YMnO3 (YMO) thin films on Si(111) using silicon oxynitride (SiON) as a buffer layer. Thickness of SiON buffer layer was well controlled within 2 nm. High resistance of ultrathin SiON layer (dSiON∼0.7 nm) to Si oxidation was confirmed by x-ray photoelectron spectroscopy (XPS). Using the ultrathin SiON layer, we obtained c-axis oriented ferroelectric phase of YMO. Although capacitance–voltage curves of Al/YMO/SiON/Si(111) showed hystereses attributed to ferroelectricity of the YMO films, the memory window was not sufficient (0.2 V), seemingly due to poor crystallinity of the YMO films. On the other hand, leakage current characteristic was good enough for application. The typical value of leakage current density was 10−8 A/cm2 at a drive voltage of ±5 V. In this article, the details of the characterization elucidated by using x-ray diffraction, atomic force microscopy, and XPS will be shown as well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315614
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  • 7
    Electronic Resource
    Electronic Resource
    Reactivity of Au with ultrathin Si layers: A photoemission study (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 345-350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a photoemission study on reactivity of the Au–Si system. We studied gold films evaporated atop ultrathin silicon layers previously deposited on GaAs. Following analysis of both the Si 2p core level and the Au 5d valence band spectra related response, we show that the reaction mechanism between Au and Si is affected by structural imperfections of the silicon layer. This is in sharp opposition to some current models of the reactivity mechanism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372658
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  • 8
    Electronic Resource
    Electronic Resource
    High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4249-4253 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS and ZnMgS layers have been grown onto GaP substrates by molecular beam epitaxy (MBE). The key parameters of the growth are a high substrate temperature and a high sulfur (S) beam pressure. The S beam pressure was typically 1×10−2 Pa, which was more than one order of magnitude larger than in conventional MBE of ZnS. Using the high S beam pressure, large ZnS growth rate of 0.3–1.0 μm/h could be obtained even at 490 °C. The growth rate was limited by the Zn supply. Optimization of the S beam pressure reduces the full width at half maximum (FWHM) of the (400) double-crystal x-ray rocking curve (DCXRC). For a 2.1-μm-thick ZnS layer the width can be reduced to 400 arcsec. The low temperature photoluminescence (PL) spectra show sharp excitonic emissions including the free exciton emission. ZnMgS layers were grown onto ZnS buffer layers. The ZnMgS layers as well show good crystal and optical qualities. The FWHM of DCXRC of the 1.5-μm-thick Zn0.83Mg0.17S layer is 650 arcsec, which is comparable to the FWHM of a ZnS layer of similar thickness. The low temperature PL of the ZnMgS layer is dominated by a strong excitonic emission. The band gap of Zn1−xMgxS is estimated from reflection spectra. For x=0.20, the band gap is 3.974 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373061
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  • 9
    Electronic Resource
    Electronic Resource
    Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer inclusion (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 795-800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a photoemission spectroscopy study of As-rich n-GaAs(001) surface modified by the deposition of an undoped silicon overlayer with thickness quite narrowly covering the interval from ∼4 to 25 Å. We observed a nonmonotonic relation between the surface band bending and Si overlayer thickness with the lowest surface potential at about 10-Å-thick silicon overlayer. The valence band spectra inspection reveals the double leading edge incidental to alignment of the valence band edges of GaAs and Si overlayer with the offset of 0.29 eV and various theoretical models of semiconductor–semiconductor interfaces are discussed. Based on the influence of the silicon layer on both band bending and Schottky barrier height, it is concluded that the Schottky barrier height of Au/Si/GaAs structure evolves towards the Schottky limit for an ideal (par definition free of interface states) Au/GaAs junction as the silicon interlayer thickness reaches about 10 Å. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371943
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  • 10
    Electronic Resource
    Electronic Resource
    An elderly patient with mycosis fungoides successfully treated with chronic low-dose oral etoposide therapy (2004)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 29 (2004), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.2004.01373.x
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