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  • 11
    Electronic Resource
    Electronic Resource
    High-temperature superconductor Josephson junctions with a gradient Pr-doped Y1−xPrxBa2Cu3O7−δ (x=0.1, 0.3, 0.5) as barriers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2866-2868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconductor YBa2Cu3O7−δ based superconducting-normal-superconducting (SNS) Josephson junctions were fabricated using a unique device design. The normal material included a gradient Pr-doped Y1−xPrxBa2Cu3O7−δ layer which was composed of a light doping (x=0.1) next to both YBa2Cu3O7−δ electrodes, a slightly higher doping (x=0.3) towards the center, and a doping concentration of x=0.5 in the middle of the N layer. This design graded the lattice mismatch between YBa2Cu3O7−δ and the N layer, thus avoiding the accumulation of all the lattice strain at one interface. It also results in good chemical, thermal, and structural compatibility between adjacent layers for the desired multilayer structures. The SNS junctions fabricated in this way showed resistively shunted junction current-voltage characteristics under dc bias and Shapiro steps under microwave irradiation at a temperature in the range of 75–87 K. Direct current superconducting quantum interference devices showed a voltage modulation about 5 μV by a magnetic field at liquid nitrogen temperature. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112518
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  • 12
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of thick YBa2Cu3O7−δ films with Jc≥1 MA/cm2 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1848-1850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using pulsed laser deposition, YBa2Cu3O7−δ (YBCO) films ranging in thickness from 0.065 to 6.4 μm have been deposited on yttria-stabilized zirconia substrates with an intermediate layer of CeO2. The thinnest films have critical current densities of over 5 MA/cm2 at 75 K with zero applied field; as film thickness is increased, Jc decreases asymptotically to 1 MA/cm2. X-ray analysis of a 2.2-μm-thick film shows that the YBCO is predominantly c-axis oriented and textured in-plane, while a Rutherford backscattering spectrometry minimum channeling yield of ≈75% indicates that the film contains disordered material at this thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110653
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  • 13
    Electronic Resource
    Electronic Resource
    Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1290-1292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report epitaxial growth of TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using x-ray diffraction, Rutherford backscattering, four-point-probe ac resistivity, high resolution transmission electron microscopy and scanning electron microscopy techniques and epitaxial relationship was found to be 〈100〉 TiN (parallel) 〈100〉 Si. TiN films showed 10%–20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Four-point-probe measurements show characteristic metallic behavior of these films as a function of temperature with a typical resistivity of about 15 μΩ cm at room temperature. Implications of low-resistivity epitaxial TiN in silicon device fabrication are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107568
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  • 14
    Electronic Resource
    Electronic Resource
    In situ single-chamber laser processing of YBa2Cu3O7−δ superconducting thin films on yttria-stabilized zirconia buffered (100)GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 357-359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−δ(YBCO) thin films have been deposited in situ on GaAs(100) by laser evaporation using yttria-stabilized zirconia (YSZ) as a buffer layer. The YSZ buffer layer was deposited at room temperature initially, followed by a deposition at 650 °C. The YBCO layers were deposited subsequently at substrate temperature of 650 °C. All the depositions were carried out in a single chamber equipped with a multitarget holder using KrF excimer laser, λ=248 nm. The morphology and structure of the buffer layer and YBCO films were determined using x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Auger spectroscopy. The nature of YSZ films was determined to be polycrystalline with partial texturing. The YBCO superconducting thin films on these YSZ-coated GaAs specimens exhibited strong (00l) orientation with peak intensities similar to those observed on single-crystal YSZ substrates. The superconducting transition temperature Tc (onset) of 92 K and Tc0(zero resistance) of 73 K were achieved for YBCO thin films on GaAs with YSZ buffer layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105594
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  • 15
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of Ba0.5Sr0.5TiO3 thin films with conductive SrRuO3 bottom electrodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2197-2199 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Ba0.5Sr0.5TiO3 (BST) thin films were deposited on LaAlO3 substrates with the conductive metallic oxide SrRuO3 (SRO) as a bottom electrode by pulsed laser deposition. The BST and SRO films were (h00) and (00l) oriented normal to the substrate surface, respectively. The epitaxial nature of both BST and SRO layers was determined by the measurement of in-plane orientation with respect to the major axes of the substrate. Ion beam channeling with a minimum yield of around 10% from Rutherford backscattering spectrometry demonstrated the films to be of high crystallinity. A dielectric constant around 500 and dielectric loss less than 0.01 at a frequency of 10 kHz were measured on the capacitors with a configuration of Ag/BST/SRO. Electrical measurements on such epitaxial BST films showed a breakdown voltage above 106 V/cm and a leakage current density of less than 5×10−8 A/cm at a field intensity of 2×105 V/cm. These results prove the BST/SRO heterostructure to be a good combination for microelectronic device applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113945
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  • 16
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of highly conductive metal oxide RuO2 thin films by pulsed laser deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1677-1679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly conductive ruthenium oxide (RuO2) has been epitaxially grown on LaAlO3 substrates by pulsed laser deposition. The RuO2 film is (h00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO2 on LaAlO3 is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO2 thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO2 thin films demonstrate a quite low room-temperature resistivity of 35±2 μΩ cm at deposition temperatures of above 500 °C. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115054
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  • 17
    Electronic Resource
    Electronic Resource
    In situ single chamber laser processing of YBa2Cu3O7−δ superconducting thin films on Si (100) with yttria-stabilized zirconia buffer layers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1578-1580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ pulsed excimer laser processing of high Tc YBa2Cu3O7−δ films on Si (100) substrates with yttria-stabilized zirconia (YSZ) buffer layers, has been carried out for the first time using a multitarget deposition system. Both YSZ and YBa2Cu3O7−δ layers were deposited sequentially using a KrF excimer laser (λ=248 nm) at substrate temperature of 650 °C. The morphology and structure of the buffer layers and YBa2Cu3O7−δ films were determined using x-ray diffraction and transmission electron microscopy techniques. The superconducting transition temperature Tc (onset) of 90 K and Tc0 (zero resistance) of 82 K were achieved for YBa2Cu3O7−δ thin films on Si with YSZ buffer layers. An interesting result of this study was that good quality, highly textured YBa2Cu3O7−δ films with the c axis perpendicular to the substrate could be grown on single crystal as well as polycrystalline textured YSZ layers deposited on silicon substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103358
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  • 18
    Electronic Resource
    Electronic Resource
    High current YBa2Cu3O7−δ thick films on flexible nickel substrates with textured buffer layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1961-1963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High current YBa2Cu3O7−δ (YBCO) thick films on flexible nickel substrates with textured buffer layers were fabricated. Highly textured yttria-stabilized-zirconia buffer layers were deposited by using ion beam assisted deposition (IBAD). Pulsed laser deposited YBCO films were not only c-axis oriented with respect to the film surface but also strongly in-plane textured. The in-plane mosaic spread of YBCO films was ∼10°. A critical current density of 8×105 A/cm2 was obtained at 75 K and zero field for thin YBCO films. It was also demonstrated that thick YBCO films with a high critical current and excellent magnetic field dependence at liquid nitrogen temperature can be obtained on flexible nickel substrates by using the textured buffer layers. The result indicates that thick film technology in combination with IBAD buffer layers could be a viable method for fabricating YBCO tapes in long lengths. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112830
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  • 19
    Electronic Resource
    Electronic Resource
    Formation of epitaxial and textured platinum films on ceramics-(100) MgO single crystals by pulsed laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2093-2095 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the formation of textured and epitaxial metallic films on (100) MgO single crystals substrates (lattice constant a=4.21 A(ring)) as a function of deposition temperature during pulsed laser ablation. Platinum (a=3.92 A(ring)) films on MgO with lattice misfit of 7.4% were found to grow epitaxially in the temperature range 500–700 °C. Three-dimensional x-ray diffraction results (theta, phi, and chi scans) show 〈100〉 epitaxy with the alignment of all three cube axes. Rutherford backscattering and channeling measurements on a film deposited at 700 °C showed a minimum yield of 2.2%, which is very close to the defect-free single crystal value. In the temperature range 200–500 °C both 〈100〉 and 〈111〉 textures were observed. The 〈111〉 oriented (normal to the surface) films were random in the plane of the substrate, whereas 〈100〉 crystallites were epitaxial. Below 200 °C, only 〈111〉 crystallites were observed. The 〈111〉 texture of platinum films is also observed when grown on amorphous substrates such as SiO2. The experimental results are normalized with theoretical simulations addressing the minimization of film energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111693
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  • 20
    Electronic Resource
    Electronic Resource
    Preparation of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 30-32 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high-quality 〈00l〉 textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si by interposing 〈00l〉 textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 ns). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9×10−4 Torr) at 775 °C on (001)Si substrate having 〈001〉 YSZ//〈001〉Si texture. The YBCO thin films were deposited in situ in oxygen ambient (200 mTorr) at 650 °C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530 °C and 0.4–0.6 Torr, respectively. The laser fluence to deposit this multistructure was 2.5–5 J/cm2. The 〈00l〉 textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2, and a coercive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109740
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