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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8259-8263 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a vertically aligned 4-domain nematic liquid crystal display cell with thin film transistor. Unlike the conventional method constructing 4-domain, i.e., protrusion and surrounding electrode which needs additional processes, in this study the pixel design forming 4-domain with interdigital electrodes is suggested. In the device, one pixel is divided into two parts. One part has a horizontal electric field in the vertical direction and the other part has a horizontal one in the horizontal direction. Such fields in the horizontal and vertical direction drive the liquid crystal director to tilt down in four directions. In this article, the electro-optic characteristics of cells with 2 and 4 domain have been studied. The device with 4 domain shows faster response time than normal twisted-nematic and in-plane switching cells, wide viewing angle with optical compensation film, and more stable color characteristics than 2-domain vertical alignment cell with similar structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 29-35 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We show how to measure dynamic specific heat and thermal conductivity of a solid or liquid sample using the 3ω technique, which is an ac-modulation method where we use a heater simultaneously as the sensor. By varying the width of the heater relative to the thermal decay length, one can choose the proper regime to measure thermal conductivity or specific heat. The technique is applied to window glass and the results confirm the validity of the method. Experimental results for potassium dihydrogen phosphate crystal demonstrate the first-order transition at the Curie point, and the dynamic specific heat of supercooled liquid potassium–calcium nitrate is shown. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4764-4766 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The investigation of the structural and magnetic properties of bcc Co1−xFex (0.1〈x〈0.4) alloy films prepared on MgO(001) substrates using e-beam evaporation and pulsed laser ablation deposition (PLAD) methods is reported. Both structural and magnetic properties seem to be strongly correlated to the deposition conditions, i.e., substrate temperatures (Ts) and deposition rates (DR). To identify the stability limits of the bcc structure in the phase diagram, our study is limited to the Co-rich compounds. For x≥0.3 at high Ts (500 °C), alloy films deposited by e-beam evaporation exhibit a bcc (001) growth, showing the magnetic anisotropy with easy axis parallel to the MgO [100] crystal axis. In the PLAD technique, the excellent bcc (001) film growth is observed at Ts=300 °C for x=0.25 which is close to the concentration limit of the bcc regime in the equilibrium bulk phase diagram, whereas the same compound films deposited at high Ts reveal the mixed phase of fcc (001) and bcc (001) structures. Magnetic hysteresis measurements of the film grown by the PLAD technique exhibit similar results to those of the films deposited by e-beam evaporation. These results show that, for the well-crystallized films with a bcc (001) texture, the magnetocrystalline anisotropy develops in-plane.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of heterostructures containing an InGaAs/InP heterointerface generated by organometallic chemical vapor deposition regrowth have been investigated. Regrowth of InGaAs on InP was carried out after different sample preparations including wet chemical etching and in situ treatment prior to the regrowth. The electrical properties of the heterointerface were studied by performing deep-level transient spectroscopy measurements. An electron trap was observed in the interface region of the samples either in situ etched with HCl gas or annealed under PH3 overpressure. Temporal pulse response measurements were employed to study the effects of this electron trap on the optical performance of p-i-n photodetectors containing this regrown heterointerface.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3553-3556 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a continuous cooling method, as a simple modification of adiabatic calorimetry which typically operates in the heating mode, with the capability of varying the scanning rate in the range of 0.01–2 K/min. This method allows us to determine the absolute value of specific heat of a liquid or solid during cooling as well as during heating in the temperature range between 100 and 400 K. The typical specific heat data of a supercooled liquid [Ca(NO3)2]0.4(KNO3)0.6 agree well with results by other methods. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2451-2453 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We developed an ac microcalorimeter utilizing the Peltier effect of a thermocouple junction as an ac power source. This Peltier microcalorimeter allows us to measure the absolute value of the heat capacity of small samples with submilligrams of mass. The performance of the microcalorimeter was checked in the temperature range of 15–420 K with α-Al2O3 samples of 0.54 and 2.25 mg. The absolute accuracy was ±3% for the range of 30–150 K and ±1% for 150–420 K. The precision was better than 0.5% in the whole temperature range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 977-979 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of perovskite manganite La0.7Ca0.3MnO3 were grown epitaxially on SrTiO3(100), MgO(100) and LaAlO3(100) substrates by the pulsed laser deposition method. Microscopic structures of these thin film samples as well as a bulk sample were fully determined by x-ray diffraction measurements. The unit cells of the three films have different shapes, i.e., contracted tetragonal, cubic, and elongated tetragonal for SrTiO3, MgO, and LaAlO3, respectively, while the unit cell of the bulk is cubic. It is found that the samples with a cubic unit cell show smaller peak magnetoresistance at low fields ((approximately-less-than)1 T) than the noncubic ones do. The present result demonstrates that the magnetoresistance of La0.7Ca0.3MnO3 at low fields can be controlled by lattice distortion via externally imposed strains. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3775-3777 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrided SiO2 thin films on Si wafers were studied by x-ray reflectivity measurements and their electron-density profiles were evaluated. Interfacial layers of the oxides were found to have densities higher than that of either crystalline Si substrates or strained interfacial layers of thermal oxides. The high density probably results from nitrogen incorporation near the interfaces. The present results suggest that strongly retarded boron penetration through nitrided gate oxides is due to their high-density interfacial layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 589 (1990), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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