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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells'' [Appl. Phys. Lett. 67, 3432 (1995)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2591-2591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116792
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  • 2
    Electronic Resource
    Electronic Resource
    Lattice and spin polarons in two dimensions (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 6502-6508 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A variational approach is employed to compute the wave function of a single polaron for a two-dimensional Holstein Hamiltonian with arbitrary forms of linear particle–boson interactions and boson dispersion relations. The Toyozawa ansatz is utilized, and generalizations to multiple polarons are outlined. Applications are made to model superradiance in pseudoisocyanine bromide J-aggregates, and to calculate quasiparticle dispersion of an itinerant hole in a two-dimensional antiferromagnet. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310326
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of high hydrostatic pressure on phase composition and microstructure in Au-28 at. % Ge alloy/GaAs contacts (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7231-7238 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of external hydrostatic pressure up to 7 kbar on the Au-Ge binary phase diagram and on the arsenic sublimation are evaluated by thermodynamic calculations. Experimental observations in the eutectic Au-28 at. % Ge/GaAs contacts which were annealed at vacuum and in a 7 kbar argon gas, respectively, are taken as illustrative examples for the comparison with the calculated results. It is concluded that pressures up to 7 kbar shift only slightly the phase boundaries in the Au-Ge phase diagram that were obtained in standard conditions (1 atm) and a pure argon gas with a pressure of 7 kbar acts as a good capsulation to prevent species As from sublimation. The measurements indicate that the film/GaAs interface and the film surface in the contacts annealed at 7 kbar are rich in Ge and are morphologically smooth. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358004
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  • 4
    Electronic Resource
    Electronic Resource
    Efficient Preisach demagnetization algorithm and its experimental testing : 38th Annual Conference On Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5502-5504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The topic of demagnetization has always been considered important to the area of magnetics in general. Whether it is required to characterize the initial permeability of a premagnetized sample or to erase, nondestructively, previously recorded data on disks or tapes, demagnetization processes are indispensable. Theoretically, demagnetization can be achieved by applying infinite ac field cycles with slowly decaying amplitudes. In practice, however, only a finite subset of this sequence may be applied. As a result, achieving the demagnetized state, or even a zero residual magnetization state, becomes uncertain. The purpose of this paper is to present an efficient Preisach-type demagnetization algorithm that can lead to a zero residual magnetization state within few field cycles. While this state might not fully match the demagnetized state, it can be regarded as a good approximation especially for data erasure applications. The algorithm has been experimentally tested and compared to particular demagnetization techniques employing finite ac field cycles with decaying amplitudes. Some sample results of this experimental testing are reported in the paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355670
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells [J. Appl. Phys. 78, 5696 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4474-4474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362717
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5696-5700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Ga0.75In0.25As0.04Sb0.96/Al0.22Ga0.78As 02Sb0.98 strained multiple- quantum-well structure grown by molecular-beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures ≤80–100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature-dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359628
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature-dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2139-2141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature-dependent exciton behavior in a quaternary Ga0.67In0.33As0.01Sb0.99/Al0.25Ga0.75As 0.2Sb0.98 strained single-quantum-well (SQW) structure by photoluminescence spectroscopy. Strong exciton resonances are observed and have been attributed to localized excitons below 80 K and to free excitons at high temperatures. Nevertheless, we show that the experimental results of stronger exciton–phonon coupling in the quaternary SQW structure would lead to partial ionization of free excitons at temperatures above 125 K, in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361072
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5921-5926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of InAsP/InP strained multiple quantum wells have been experimentally determined in the temperature range 7–300 K. In order to understand the temperature behavior of the photoluminescence, a theoretical calculation is presented that takes into account the temperature-induced variations in band gap, carrier effective mass, biaxial strain, and exciton binding energy. The results show that the energy of the transition E1H between the n=1 electron subband and the n=1 heavy-hole subband changes as a function of temperature, and depends mainly on the evolution of the strained band gap of the InAsP layers. This is because in the temperature range 7–300 K the variations of the electron subband energy and the exciton binding energy are much less than those of the strained band gap, while the variation of the heavy-hole subband energy can be neglected. These results also explain why, for a lattice-matched quantum well, the variation of exciton peak energies with temperature follows that of the forbidden energy gap of the bulk material in the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358481
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  • 9
    Electronic Resource
    Electronic Resource
    Polarons, localization, and excitonic coherence in superradiance of biological antenna complexes (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 3876-3893 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A real-space formulation of time-resolved fluorescence of molecular aggregates is developed using the one-exciton density matrix ρ(t) of the optically driven system. A direct relationship is established between the superradiance enhancement factor Ls and the exciton coherence size Lρ associated with the off-diagonal density matrix elements in the molecular representation. Various factors which affect the latter, including finite temperature, energetic disorder, coupling with phonons, and polaron formation are explored. The theory is applied for the interpretation of recent measurements in the B850 system of the LH2 photosynthetic complexes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474746
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  • 10
    Electronic Resource
    Electronic Resource
    Reduction of ilmenite with hydrogen (1991)
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 30 (1991), S. 2080-2087 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie00057a005
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