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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 637-646 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the incorporation of heavily supersaturated C into Si using solid-phase epitaxy (SPE) of implanted amorphous layers. The strain in the Si1−xCx/Si heterostructures was measured using rocking curve x-ray diffraction. The microstructure and defect introduction were examined using ion channeling and transmission electron microscopy (TEM). The fraction of C located on substitutional lattice sites in the Si was monitored using Fourier transform infrared absorption spectroscopy and ion channeling at resonance energies. Carbon-depth profiles were monitored by secondary ion mass spectroscopy. The metastable solubility limit for the incorporation of C into Si by SPE was found to be 3.0–7.0×1020 atoms/cm3, which is over three orders of magnitude above the equilibrium solubility at the Si melting point. This limit was determined by the ability to regrow without the introduction of microtwins and stacking faults along {111} planes. We postulate the local bond deformation resulting from the atomic size difference between C and Si leads to the faceting of the amorphous–crystalline interface and allows defect introduction, thus limiting the C supersaturations achieved in Si by SPE. It was also found that the defect density in the regrown alloys could be reduced by higher SPE regrowth temperatures in rapid thermal anneal processing. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3477-3484 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hydrogen has been introduced from a rf plasma into Czochralski Si at 275 °C. Most of the hydrogen is trapped near the surface where it forms Si—H bonds, but a small fraction diffuses into the Si. This fraction enhances oxygen-related thermal donor (TD) formation rates in a diffusionlike profile during subsequent furnace anneals between 350 and 400 °C. A hydrogen concentration that is only a few percent of the oxygen concentration is sufficient to enhance the TD formation rate, indicative of a hydrogen-catalyzed process. Maximum concentrations for TDs after annealing at 400 °C exceed that for retained hydrogen. A mechanism of hydrogen diffusion through oxygen traps and correlated hydrogen-promoted oxygen diffusion is proposed to explain the enhanced TD formation rates.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2337-2342 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Plasma hydrogenation of Czochralski Si has been performed to investigate the introduction of Si–O stretch modes and their correlation with thermal donor formation. Plasma hydrogenation at 275 °C introduces a well-resolved vibrational absorption band at 1005 cm−1, while absorption due to electronic excitations for thermal donors remains weak. We attribute this band to a Si–O precursor center for thermal donor formation, and suggest it is the oxygen dimer center discussed in other studies of oxygen in Si. Vibrational modes introduced at 990 and 1000 cm−1 during post-hydrogenation furnace annealing at 400 °C correlate with thermal donors TD2 and TD3, respectively. Stretch frequencies for Si–O in thermal donor centers are compared to those for oxygen aggregates in oxygen-implanted and electron-irradiated Si.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3656-3668 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers. The loss of substitutional C was monitored over a temperature range of 810–925 °C using Fourier transform infrared absorbance spectroscopy. Concurrent strain measurements were performed using rocking curve x-ray diffraction to correlate strain relaxation with the loss of substitutional C from the lattice. Loss of C from the lattice was initiated immediately without an incubation period, indicative of a low barrier to C clustering. The activation energy as calculated from a time to 50% completion analysis (3.3±5 eV) is near the activation energy for the diffusion of C in Si. Over the entire temperature range studied, annealing to complete loss of substitutional C resulted in the precipitation of C into β-SiC. The precipitates are nearly spherical with diameters of 2–4 nm. These precipitates have the same crystallographic orientation as the Si matrix but the interfaces between the Si and β-SiC precipitates are incoherent. During the initial stages of precipitation, however, C-rich clusters form which maintain coherency with the Si matrix so the biaxial strain in the heterostructure is partially retained.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2003-2010 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The floating wire technique was applied to characterize the focusing properties of the D2 spectrometer magnet to be used in the ANKE installation of the COSY Jülich accelerator facility. Trajectories corresponding to 140–600 MeV/c ejectiles emerging from a target in front of the rectangular-type D2 magnet were measured in order to determine the location of foci where detectors for the physics experiments were to be placed. The focus for trajectories of the same momentum was localized by varying the trajectory start angle at the target. To overcome the problem of instability, which arises when the pulley has to be located behind the focus, an unbalanced pulley was used. Other improvements include methodological features such as the particular design of our air-bearing pulley enabling a "freezing-in" of the wire movement and therefore yielding a very high accuracy of the wire position measurement, the use of a 40 μm gold-plated tungsten wire best fulfilling the mechanical and electrical requirements, a fast-regulating power supply in combination with an absolutely calibrated current meter, and the excellent accuracy of modern surveying instrumentation. An overall momentum accuracy of Δp/p≤10−3 and a position accuracy of the trajectories of ±1 mm in the vicinity of the foci have been demonstrated. The precision and accuracy of the floating-wire measurements are discussed and compared with ray-tracing calculations based on measured and calculated field maps. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2755-2764 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Chemical bonding of H to displacement defects and internal surfaces in Si has been investigated by infrared-absorption and nuclear reaction analysis techniques. A He implantation/anneal sequence was used to produce faceted voids which are retained to at least 800 °C in a buried layer as revealed by transmission electron microscopy. Hydrogen was injected into void layers by three different methods: ion implantation, plasma exposure, and H2 gas exposure. Infrared absorption by Si-H stretch modes with frequencies characteristic of monohydrides on (100) and (111) surfaces are observed for all methods of H injection, consistent with bonding on faceted void surfaces. Thermal stability of Si-H is higher on void surfaces than on other trapping sites. Displacement defects produced by H-ion implantation trap H but release it upon annealing for retrapping on voids. The Si-H absorption bands with frequencies characteristic of monohydrides on (100) and (111) surfaces anneal in parallel between 600 and 800 °C and in coincidence with the loss of total H measured by nuclear reaction analysis. Moreover, densities comparable to the total H density are estimated for void surface states and for Si—H bonds on void surfaces. It is inferred from these results that bonding of H on the void surfaces is energetically favored over H2 formation in the voids, and it is concluded that the 2.5±0.2 eV determined in a separate study of H release from buried voids is the Si—H bond energy descriptive of both (111) and (100) surfaces.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7111-7117 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electrical transport properties of zone-melt-recrystallized Si films of Si-on-Insulator wafers were investigated using resistivity and Hall effect measurements between 77 and 300 K. Both graphite strip and cold cathode electron beam methods were used for zone melting which produced high resistivity ((approximately-greater-than)103 Ω cm at room temperature) recrystallized films. Phosphorus implantation into the silicon films to a dopant level of 1×1016 cm−3 and subsequent annealing at 1100 °C reduced the room-temperature resistivities to ∼1 Ω cm. Hall mobilities of 950 cm2/V s were observed at room temperature for both materials after the implant anneal sequence. However, for temperatures less than 150 K, the mobility is higher in graphite strip than in electron beam recrystallized films. This behavior is consistent with the relative crystalline qualities of the two films as determined by electron channeling and x-ray diffraction. It is noteworthy that a deep level was observed at 0.2 eV below the conduction band in the graphite strip recrystallized film but not in the electron beam recrystallized samples.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1758-1765 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The formation and annihilation behaviors of thermal donors in 16O+-, 18O+-, or 16O++12C+-implanted float-zone silicon have been investigated with secondary ion mass spectrometry, spreading resistance probe, Hall effect, and transmission electron microscopy. Various oxygen or carbon+oxygen-implanted samples were laser annealed to remove implant damage and subjected to furnace annealing at 450 °C for up to 100 h to activate oxygen-related thermal donors. Oxygen concentrations at the peak of the implanted profiles exceed the maximum for Czochralski Si by an order of magnitude. It is found that the third to fourth power dependence of thermal donor formation on oxygen generally observed for Czochralski Si does not hold for the higher oxygen concentration in the implanted layer. Annihilation characteristics of thermal donors formed in the oxygen implanted layers were investigated by the rapid thermal annealing technique. A rapid thermal anneal at 1150 °C for 30 s was required to remove all the thermal donors. Based upon the annihilation kinetics data, it is tentatively concluded that both old and new thermal donors exist in the oxygen-implanted layer. For carbon+oxygen-coimplanted samples, the data have shown that carbon greatly increases the new thermal donor concentration in the implanted layer. Finally, precipitate morphologies for both oxygen-only- and carbon+oxygen-coimplanted samples after a 450 °C furnace annealing were investigated by high resolution electron microscopy. In the case of oxygen-implant-only samples, predominant precipitate morphologies are needlelike while platelet defects predominate for carbon+oxygen-coimplanted samples. Since carbon increases the formation rate of new thermal donors, it is unlikely that they are distinctly related to needlelike precipitates as claimed in previous studies.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3842-3847 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Porous silicon and its oxide can be converted into porous silicon oxynitrides by ammonia heat treatment. For example, ammonia treatment at 1000 °C for 1 h following 850 °C, 30-min steam oxidation of porous silicon can result in up to 40 at. % nitrogen in the porous oxynitrides. These porous silicon oxynitrides are compositionally more uniform than ammonia-nitrided thermal oxides which exhibit nitrogen buildup at the oxide layer interfaces. However, the order of the oxidation and nitridation treatment matters: nitrided oxidized porous silicon exhibits higher electrical breakdown strength than nitrided porous silicon or oxidized nitrided porous silicon.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 849-855 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Effects of high carbon concentration upon oxygen precipitation and related phenomena in Czochralski (Cz) silicon have been investigated by combining various furnace and rapid thermal anneals. Our data show that oxide precipitate (OP) density, estimated from changes in interstitial oxygen concentration (ΔOi), increases with increasing substitutional carbon concentration, Cs, while thermal donor (TD) formation is inhibited at high Cs. Even though ΔOi increases monotonically with Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs∼4 ppma) exhibit Pendellösung fringes, indicating a strain-free bulk state. Our transmission electron microscope and optical microscopic data also show very few resolvable structural defects associated with precipitates inside the bulk Si. Using a thermodynamic and kinetic model, we attempt to explain: (1) reduced thermal donor formation, (2) lack of bulk stress notwithstanding high ΔOi, and (3) predominantly polyhedral precipitate morphologies in high carbon content CzSi.
    Materialart: Digitale Medien
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