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  • 1990-1994  (22)
  • 1990  (22)
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  • 1990-1994  (22)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Reproducible group-V partial pressure rapid thermal annealing of InP and GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2482-2488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the effectiveness of two types of SiC-coated graphite susceptors in providing degradation-free rapid thermal annealing of InP and GaAs. The first type of susceptor must be charged with the group-V species prior to any annealing cycles. Under the optimum charging conditions, effective surface protection is provided for up to five sequential high-temperature (900 °C, 10 s) anneals of GaAs, or only one anneal (750 °C, 10 s) of InP before recharging is necessary. The incorporation of small reservoirs into the susceptor allows for the provision of a constant group-V partial pressure over the wafer, and it appears that for this type of susceptor many dozens of InP or GaAs wafers can be annealed without any apparent surface degradation. The relative merits of using InAs, GaAs, or InP as the group-V source in the reservoirs have been compared, and it is found that the best protection is achieved when one uses the same semiconductor in the reservoirs as is being annealed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346510
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 902-905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≈4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346757
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Tungsten metallization for stable and self-aligned InP-based laser devices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3110-3113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten thin films on n-InP layers have been investigated for potential use as a refractory ohmic contact for self-aligned In-based etched mesa buried heterostructure laser devices. The W films were rf sputter deposited onto InP substrates, S doped in the range of 1×1018–1×1019 cm−3. The deposition parameters were optimized to produce films with the lowest possible induced stress, minimum argon content, and best morphology for as-deposited wafers and after undergoing reactive-ion etching and high-temperature thermal cycles (700 °C), which are required for the self-aligned technology. These parameters were obtained for films that were rf sputter deposited at a discharge power of 240 W and under argon pressure of about 10 mTorr. A thermal expansion coefficient of 5.84×10−6 C−1 and a biaxial elastic modulus of 0.97×1012 Pa were measured for the films. The electrical behavior of the W films sputtered onto n-InP was studied by means of I-V and contact resistance measurements, which revealed a linear ohmic contact as-deposited, while sputtered onto n-InP substrates, S doped to the level of 5×1018 cm−3 or higher. Rapid thermal processing at elevated temperatures improved the ohmic contact quality and decreased the specific contact resistance values to a minimum of 3.5×10−6 Ω cm2 as a result of heating the W/InP (S doped 1×1019 cm−3) at 600 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346405
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Ion milling damage in InP and GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2760-2768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-surface damage created by Ar+ ion milling in InP and GaAs was characterized by capacitance-voltage, current-voltage, photoluminescence, ion channeling, and transmission electron microscopy. We find no evidence of amorphous layer formation in either material even for Ar+ ion energies of 800 eV. Low ion energies (200 eV) create thin (≤100 A(ring)) damaged regions which can be removed by annealing at 500 °C. Higher ion energies (≥500 eV) create more thermally stable damaged layers which actually show higher backscattering yields after 500 °C annealing. Heating to 800 °C is required to restore the near-surface crystallinity, although a layer of extended defects forms in GaAs after such a treatment. No dislocations are observed in InP after this type of annealing. The electrical characteristics of both InP and GaAs after ion milling at ≥500 eV cannot be restored by annealing, and it is necessary to remove the damaged surface by wet chemical etching. For the same Ar+ ion energies the damaged layers are deeper for InP than for GaAs after 500 eV ion milling at 45° incidence angle. Removal of ∼485 and ∼650 A(ring) from GaAs and InP, respectively, restores the initial current-voltage characteristics of simple Schottky diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346453
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures grown by molecular-beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4029-4034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper compares Hall-effect measurements combined with rapid thermal annealing (RTA) and low-temperature photoluminescence (4-K PL) as characterization techniques for the optimization of the growth of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures. The Hall-effect measurements with the RTA were used to determine the optimized growth temperature. 4-K PL was used to determine the quality of the InGaAs quantum well and the In mole fraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346239
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Implant activation and redistribution in AlxGa1−xAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2396-2409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical activation characteristics of implanted Be, Mg, Si, and S in AlxGa1−xAs (x=0–1) were investigated as a function of ion dose for rapid annealing in the range 600–950 °C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction—for Be, the activation energy is 0.35 eV for GaAs, and 0.49 eV for Al0.54Ga0.46As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the SiGa–to–SiAs -related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 s) up to 900 °C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345542
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    High-energy (56 MeV) oxygen implantation in Si, GaAs, and InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2253-2255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth profiles measured by secondary-ion mass spectrometry of 56 MeV oxygen ions implanted into Si, GaAs, and InP are reported. Most of the oxygen is contained within a sharp (full width at half maximum ∼2 μm) non-Gaussian profile centered at ∼31 μm in GaAs, ∼36 μm in InP, and ∼46 μm in Si, with the distribution skewed towards greater depths. The experimental projected ranges appear to be 10% larger than theoretical predictions. Changes in the electrical, optical, and structural properties of the material were measured by transmission electron microscopy (TEM), photoluminescence, and spreading resistance profiling. In the as-implanted Si, the maximum perturbation in the electrical properties occurs at ∼37 μm. No defects are visible by TEM in any of the as-implanted semiconductors for oxygen ion doses of 1.35×1015 cm−2 but the photoluminescent intensity in GaAs and InP is reduced by more than an order of magnitude as a result of this type of implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103906
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2186-2188 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of SF6 to CH4/H2 discharges is shown to produce a significant increase in the selectivity for dry etching of both InGaAs and InP over AlInAs. The selectivity is a strong function of the dc bias on the sample during the reactive ion etching, with equirate removal of InGaAs and AlInAs for biases above 300 V. For lower bias values, the etch stop mechanism is related to the formation of Al-F and In-F species on the AlInAs surface, as evidenced by x-ray photoelectron spectroscopy. The use of SF6 allows independent variation of the ratio of F to the other reactive species, in comparison to the use of fixed ratio gases such as C2H4F2 or CH3F.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102963
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1251-1253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of Zn in the base region of GaAs-AlGaAs heterojunction bipolar transistor structures during growth by organometallic vapor phase epitaxy has been examined with respect to the presence of Si doping in the emitter-contact, emitter, and collector/subcollector layers, and as a function of Zn doping concentration and Si counterdoping level in the p+ base. For a growth temperature of 675 °C the Zn shows no significant redistribution up to concentrations of 3×1019 cm−3 without Si doping. The addition of Si to the adjacent AlGaAs emitter and collector/subcollector layers causes substantial diffusion of Zn from the base, while Si doping of the GaAs emitter contact results in even greater Zn redistribution. Under these conditions, the Zn concentration in the base attains a maximum value of ∼7×1018 cm−3. Silicon counterdoping in the base region retards the Zn diffusion, while strain introduced by an InGaAs cap layer has no effect on the Zn redistribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102528
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Carbon implantation in InGaAs and AlInAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown for the first time that carbon behaves predominantly as an acceptor in InGaAs and AlInAs under co-implantation conditions. The co-implanted ion, regardless of species, acts to create vacant lattice sites for occupation by the carbon. Implantation of 40 keV carbon ions alone at doses between 5×1012 and 5×1014 cm−2 followed by annealing in the range 600–950 °C for 10 s does not produce any measurable electrical activity in either material. In InGaAs, carbon implantation at 5×1014 cm−2 produced net acceptor activations of 20, 11, or 6% for Ga, Ar, or As co-implantation, respectively, at the same doses after 700 °C, 10 s anneals. Similar results were obtained for AlInAs after annealing at 900 °C. The diffusion coefficient for carbon is estimated from secondary-ion mass spectrometry measurements to be less than 3.3×10−14 cm2 s−1 at 800 °C in both materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102531
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