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  • 11
    Electronic Resource
    Electronic Resource
    Degradation and annealing of electron-irradiated diffused junction InP solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7368-7375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation and annealing properties of 1 MeV electron-irradiated n+p diffused junction InP solar cells are reported in detail. The solar cells were characterized through current–voltage measurements under simulated solar illumination at 1 sun, AM0. The radiation-induced defect spectra were characterized through deep level transient spectroscopy. At fluences up to 1015 cm−2, cell degradation was primarily due to a decrease in the short-circuit current Isc which occurred during the introduction of the hole trap, H4. Most of this degradation could be removed by minority-carrier injection annealing of the H4 defect at temperatures as low as 225 K. At higher irradiation fluences, up to 1016 cm−2, cell degradation was dominated by a decrease in both the open-circuit voltage Voc and the fill factor. This degradation was caused by a large radiation-induced recombination current and by carrier removal which was associated with the introduction of the hole trap H5 and the electron traps EA, EC, and ED. Most of the effects of the recombination current and some of the carrier removal were removed by concurrent injection and thermal annealing between 373 and 400 K where the residual H4 defect concentration and the H5 defect were removed. Essentially full cell recovery was achieved after subsequent annealing between 450 and 500 K where the electron traps also showed a partial annealing stage. Thermal annealing without illumination in the range of 350–500 K showed the same defect annealing stages suggesting that the cell recovery in this temperature range is due solely to thermal annealing. The data are summarized to give a model for the radiation-induced degradation and annealing of these InP solar cells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360386
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  • 12
    Electronic Resource
    Electronic Resource
    Electron irradiation of two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2173-2176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented for 1 MeV electron-irradiated, two terminal, monolithic InP/Ga0.47In0.53As tandem solar cells. These highly efficient prototype cells show radiation resistance that is comparable to single junction InP cells. A current mismatch between the subcells does not occur until high fluence levels, that is, near 3×1015 e−/cm2. This value for the onset of current mismatch and the measured remaining absolute efficiency of 9.4% at 1×1016 e−/cm2 are excellent results reported for a tandem cell designed for space applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358795
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  • 13
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence of undoped InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4249-4251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5×1015 cm−3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 μs, and surface recombination velocities were fund to be on the order of 103 cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient ≥5.9×10−11 cm3/s at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355962
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  • 14
    Electronic Resource
    Electronic Resource
    Proton radiation effects in microwave cavities and ring resonators fabricated from YBa2Cu3O7−δ (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1563-1565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first radiation effects study on a superconducting ring resonator made from thin-film YBa2Cu3O7−δ. Exposure to 2 MeV protons causes the superconducting transition temperature Tc to decrease predictably with fluence. For temperatures below about 0.9Tc , there is no significant change in the transmission coefficient, the center frequency, or the quality factor Q of the resonator, even for doses in excess of 4×1016 protons/cm2 (∼0.04 displacements per film atom). Similarly, the low-temperature surface resistance Rs of an unpatterned film does not change with irradiation. We show that this insensitivity to radiation is not predicted by standard theory, and that the dominant part of Rs at low temperature is the residual resistance R0. Thus any viable theory describing the origin of R0 must, as a criterion, explain the origin of its insensitivity to large irradiation doses. This criterion is used to evaluate theories ascribing R0 to weak links, flux pinning, impurities, and lattice imperfections.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105178
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  • 15
    Electronic Resource
    Electronic Resource
    Displacement damage equivalent to dose in silicon devices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 451-453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particle-induced displacement damage effects in silicon bipolar transistors, including those due to electrons and to fission neutrons, are correlated on the basis of the nonionizing energy deposited in the lattice by the primary knock-on atoms. Deviations from linearity between damage effects and energy deposition are in a direction opposite to those expected from defect cluster models but can be accounted for in terms of the fraction of vacancy-interstitial pairs initially formed that survive recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100949
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  • 16
    Electronic Resource
    Electronic Resource
    Catastrophic loss of superconductivity in ion-irradiated films of YBa2Cu3O7−δ (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1001-1003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of low fluence (〈1014 cm−2 ) 63 MeV H+ and 65 MeV He2+ irradiation of prototype thin films of YBa2Cu3O7−δ produced by a plasma-arc spray technique. The observed changes in the resistance versus temperature behavior are much more dramatic than that observed for films produced by other techniques and resembles qualitatively a bond percolation threshold. The radiation sensitivity of these plasma-arc spray films is concluded to be due to poor intergranular characteristics. This information is being used to modify the processing steps to improve the properties of films produced by this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100649
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  • 17
    Electronic Resource
    Electronic Resource
    Effect of particle-induced displacements on the critical temperature of YBa2Cu3O7−δ (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1469-1471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The particle-induced depression of the superconducting critical temperature Tc of YBa2Cu3O7−δ is shown to be directly proportional, over seven orders of magnitude, to the nonionizing energy deposited in the lattice by primary knock-on atoms displaced by incident electrons, protons, and heavy ions. It is concluded that ΔTc is proportional only to the average number of defects produced and can therefore be predicted for any particle, energy, and fluence from a calculation of the nonionizing energy loss.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102287
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  • 18
    Electronic Resource
    Electronic Resource
    Order-of-magnitude method for estimating the fluence that optimizes the critical current in particle-irradiated cuprate superconductors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1237-1239 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The particle fluence that maximizes the critical current enhancement in cuprate superconductors is shown to be closely related to the nonionizing energy loss (displacement damage) of a given particle. In many cases, only the incident particle type and energy need to be known in order to allow an order-of-magnitude prediction of the optimal fluence for enhancing the critical current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107606
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  • 19
    Electronic Resource
    Electronic Resource
    Critical-current enhancement in particle-irradiated cuprate semiconductors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2600-2602 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements have been made of the magnetic field (0〈H〈6 T) and temperature (10 K〈T〈100 K) dependencies of the critical current density jc in Tl2CaBa2Cu2O8 films before and after irradiation with incremental fluences (0〈Φ〈3×1016 cm−2) of 2 MeV protons. The results are interpreted quantitatively in terms of radiation-induced changes in (1) the critical temperature, (2) the rate of thermal flux creep, and (3) local scale superconductivity. Radiation-induced enhancements in jc are described by an expression which allows the fluence that maximizes jc to be predicted as a function of H, T, pinning energy, and particle type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105915
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  • 20
    Electronic Resource
    Electronic Resource
    Effect of proton irradiation on the critical current and resistance of high Tc grain boundary Josephson junctions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 511-513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of defects on the critical current and resistance of high Tc grain boundary Josephson junctions using irradiation with 2-MeV protons. Radiation-induced defects cause the critical current (Ic) to decrease and the shunt resistance (R) to increase such that IcR∝1/R. The data are consistent with a tunneling barrier height increasing with fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111089
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