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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Gd silicides prepared by channeled ion implantation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3103-3107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A continuous buried GdSi1.7 layer is formed by channelled implantation of 90 keV Gd ions into Si(111). In the case of (001) oriented silicon substrates, the silicide film is formed on the silicon surface. Its worse crystalline quality is due to the epitaxy occurring relative to all four {111}Si planes resulting in a textured GdSi1.7 layer. Annealing at a temperature of ≥850 °C for 30 min results in the presence of only the orthorhombic GdSi2 phase on the silicon surface for both (111) and (001) silicon substrates. However, the precipitates embedded in the silicon substrate are still hexagonal GdSi1.7. The phase transformation temperature is higher for (111) than for (001) silicon. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364344
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  • 2
    Electronic Resource
    Electronic Resource
    Ion beam syntheses and microstructure studies of a new FeSi2 phase (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3306-3309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron-silicide has been formed by ion implantation of iron into silicon (111). In the as-implanted sample, a new type of orthorhombic FeSi2 phase was found. Although the lattice parameters of the new phase are the same as those of the known semiconductor β-FeSi2, its point group and space group were different and determined to be mmm and Pbca, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363240
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  • 3
    Electronic Resource
    Electronic Resource
    Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6920-6925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial ErSi1.7 layers with excellent crystallinity (χmin of Er is 1.5%) have been prepared by high-dose 90 keV Er implantation into a Si(111) substrate using channeled implantation. Such an ErSi1.7/Si system offers a rare opportunity to study comprehensively the structure, orientation, and strain using Rutherford backscattering spectrometry and channeling analysis. We found that the minimum yield and width of the [0001] dip of the Er atoms are quite different from that of the Si atoms in the silicide layer. It is confirmed that the azimuthal orientation of the hexagonal ErSi1.7 layer to the cubic Si substrate is ErSi1.7 [0001] (parallel) Si[111] and ErSi1.7 {112¯0} (parallel) Si {110}, and that the epilayer is compressively strained. Besides, by using the angular scan and image scan, we reveal that the dips of the {101¯0} family are missing for the Si atoms in the epilayer but do exist for the Er atoms in the same epilayer. The reason for this drastic difference is explained by the separate {101¯0} planes and the different steering potential of the Si and Er atoms in ErSi1.7. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361516
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and magnetic investigations of epitaxial ferromagnetic τ MnAl films grown on GaAs/AlAs by molecular-beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 398-404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystalline quality and magnetic properties of epitaxial ferromagnetic τ MnxAl100−x (x=50–70) films with perpendicular anisotropy grown on AlAs/GaAs by molecular-beam epitaxy are improved by ex situ rapid thermal annealing compared to as-grown thin films. An increase in magnetization of up to 230% is observed for moderate annealing temperatures (≈450 °C). This is strongly related to an improved ordering in the occupation of the two sublattices, which are antiferromagnetically coupled. At the same time a strong reduction in coercive field (up to a factor of 4) upon annealing is attributed to a decreased density of antiphase boundaries in the metal film. Annealing at higher temperatures (≈550 °C and above) results in the partial relaxation of the τ phase, and eventually in the transformation of the entire film to the nonmagnetic ε phase. The composition has a strong influence since the presence of excess Mn (x(approximately-greater-than)50) reduces the magnetization. The remanent magnetization Mr=465 kA/m for τ Mn50Al50 is close to the bulk value of 490 kA/m. The thickness of the film has little influence on the annealing behavior. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360614
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  • 5
    Electronic Resource
    Electronic Resource
    Ion-beam induced oxidation of GaAs and AlGaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3010-3022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of GaAs and AlxGa1−xAs targets by oxygen irradiation has been studied in detail. It was found that the oxidation process is characterized by the strong preferential oxidation of Al as compared to Ga, and of Ga as compared to As. This experimental observation, which has been accurately quantified by using x-ray photoelectron spectroscopy, is connected to the different heats of formation of the corresponding oxides. The oxide grown by ion-beam oxidation shows a strong depletion in As and relatively low oxidation of As as well. The depletion can be associated with the preferential sputtering of the As oxide in respect to other compounds whereas the low oxidation is due to the low heat of formation. In contrast Al is rapidly and fully oxidized, turning the outermost layer of the altered layer to a single Al2O3 overlayer, as observed by transmission electron microscopy. The radiation enhanced diffusion of oxygen and aluminum in the altered layer explains the large thickness of these altered layers and the formation of Al oxides on top of the layers. For the case of ion-beam oxidation of GaAs a simulation program has been developed which describes adequately the various growth mechanisms experimentally observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358650
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  • 6
    Electronic Resource
    Electronic Resource
    Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, HI) solutions (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1323-1325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface reactivity of hydrogen-passivated, HF-last-cleaned Si(100) toward aqueous HX and HF/HX (X=Cl, Br, I) is examined. The HCl and HBr solutions are found to leave the HF-cleaned bare Si surface unaltered, while the HI solution reoxidizes the hydrogen-passivated surface. Treatments in aqueous HF/HCl or HF/HBr solutions lead to the same surface passivation and surface microroughness as for HF-cleaned surfaces. In the HF/HI solution, a simultaneous oxidation and etching process takes place, resulting in an increased (111) microfaceting of the Si(100) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358938
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  • 7
    Electronic Resource
    Electronic Resource
    Co/CoAl magnetic superlattices on GaAs : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6281-6283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/CoAl multilayers are grown by molecular beam epitaxy on AlAs/GaAs (001). CoAl is used as a template for the epitaxy of Co. From RHEED and lattice matching considerations bcc Co is expected, but thicker Co layers are probably fcc with stacking faults. The crystallographic structure of the Co layers is unclear at present. Room-temperature magnetization and magnetoresistance data are presented. Co/CoAl multilayers with various CoAl thickness all show in-plane magnetic anisotropies along 〈110〉. Uniaxial anisotropy along 〈110〉 is found to increase with increasing thickness of the CoAl layers in the multilayers. The magnetoresistive effect as a function of the orientation of the current path and the applied field is ascribed to domain-wall effects and internal Lorentz magnetoresistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358305
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  • 8
    Electronic Resource
    Electronic Resource
    Surface reconstruction of hydrogen annealed (100) silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1207-1209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hydrogen termination and surface reconstruction of (100) silicon annealed at high temperature in a H2 atmosphere at 1 bar is investigated with multiple internal reflection infrared spectroscopy and atomic force microscopy. The surface flattens and becomes 2×1 reconstructed and terminated by strained monohydrides. This surface is shown to be very stable against contamination and oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356478
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  • 9
    Electronic Resource
    Electronic Resource
    Structural characterization of ion-beam synthesized NiSi2 layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1707-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiSi2(111) and NiSi2(100) layers with good crystalline quality have been formed by ion-beam synthesis. An unusual Ni atom distribution showing two completely separated layers during a single implantation step has been observed by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The orientation, strain, and stiffness of the NiSi2 layers have been studied by RBS/channeling, x-ray diffraction, and TEM. The results show that the continuous NiSi2 layers have type-A orientation with a parallel elastic strain larger than the theoretical value of 0.46% for pseudomorphic growth. The perpendicular strain of the NiSi2(111) layers is apparently smaller than that of NiSi2(100) layers, indicating a higher stiffness in the 〈111〉 direction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360268
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of epitaxial β-FeSi2 on (100) silicon using Fe–Ti–Si diffusion couples (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 599-601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial semiconducting iron–disilicide grains have been formed using an Fe–Ti bilayer on (100) silicon. The reaction kinetics of the Fe–Ti–Si diffusion couple have been studied in detail as a function of annealing conditions, and the intermediate titanium thickness. Both rapid thermal annealing and long-time furnace annealing have been used in this investigation. After a two-stage annealing sequence, with a selective wet etch removal of the unreacted top metal stack in between, a distinct trilayered structure was formed. This trilayer was found to consist of a top layer of smaller β-FeSi2 grains of random orientation, an amorphous Ti–O–Fe–Si layer with nanocrystallites embedded, and a bottom layer of uniformly large coherently epitaxial β-FeSi2 grains. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360580
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