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  • 1
    Electronic Resource
    Electronic Resource
    Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8841-8843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A defect state, defect B, was found in Ta2O5 after postdeposition annealing in O2 by a novel zero-bias thermally stimulated current spectroscopy technique. The activation energy ET was estimated to be about 0.3 eV. Evidence is given that defect B is a hole trap. We believe that defect B is an acceptor level in Ta2O5 due to Si substituting for Ta. The presence of Si contamination in Ta2O5 due to diffusion of Si from the Si substrate into Ta2O5 was confirmed by secondary-ion-mass spectrometry. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362510
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  • 2
    Electronic Resource
    Electronic Resource
    Third-generation plasma immersion ion implanter for biomedical materials and research (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1660-1665 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A third generation plasma immersion ion implanter dedicated to biomedical materials and research has been designed and constructed. The distinct improvement over first and second generation multipurpose plasma immersion ion implantation equipment is that hybrid and combination techniques utilizing metal and gas plasmas, sputter deposition, and ion beam enhanced deposition can be effectively conducted in the same machine. The machine consists of four sets of high-efficiency metal arc plasma sources with magnetic filters, a custom designed high voltage modulator for operation up to 60 kV, a separate high-frequency, low-voltage power supply for hybrid treatment processes, special rotating sample stage for samples with an irregular shape, and other advanced features. The machine has been installed at Southwest Jiaotong University and operated reliably for 6 months. This article describes the design principles and performances of the machine as well as pertinent biomedical applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1340029
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  • 3
    Electronic Resource
    Electronic Resource
    Pure high dose metal ion implantation using the plasma immersion technique (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4359-4361 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: High energy implantation of metal ions can be carried out using conventional ion implantation with a mass-selected ion beam in scanned-spot mode by employing a broad-beam approach such as with a vacuum arc ion source, or by utilizing plasma immersion ion implantation with a metal plasma. For many high dose applications, the use of plasma immersion techniques offers a high-rate process, but the formation of a surface film along with the subsurface implanted layer is sometimes a severe or even fatal detriment. We describe here an operating mode of the metal plasma immersion approach by which pure implantation can be obtained. We have demonstrated the technique by carrying out Ti and Ta implantations at energies of about 80 and 120 keV for Ti and Ta, respectively, and doses on the order of 1×1017 ions/cm2. Our experiments show that virtually pure implantation without simultaneous surface deposition can be accomplished. Using proper synchronization of the metal arc and sample voltage pulse, the applied dose that deposits as a film versus the part that is energetically implanted (the deposition-to-implantation ratio) can be precisely controlled.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150094
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  • 4
    Electronic Resource
    Electronic Resource
    A novel distributed system for plasma immersion ion implanter control and automation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1495-1498 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The high voltage and electromagnetic field environment poses a big challenge to a control system for plasma immersion ion implantation (PIII). The automation process must be immune to electric field interference produced by the high voltage power supply, modulator, radio-frequency or microwave plasma generator, MEVVA plasma sources, and so on. We have recently designed and installed a distributed control system, PIIIDCS, to automate the operation of our PIII facility. Programmable logic controllers are used as the field control stations because of their good anti-interference ability and good real time response. A DH-485 network is used as the communication link between the field controllers and the management station in order to improve the robustness and reliability of the system. The newly developed interface is designed to work in a graphic mode in Microsoft Windows 95. Test runs have shown that the system is reliable, flexible, and easy to operate. The development of this novel control system will expedite the development of commercial PIII instrumentation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148785
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  • 5
    Electronic Resource
    Electronic Resource
    Principles and characteristics of a new generation plasma immersion ion implanter (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1866-1874 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new generation multipurpose plasma immersion ion implanter (PIII) was custom designed, constructed, and installed in the City University of Hong Kong. The system is designed for general R&D applications in metallurgy, tribology, surface modification, and fabrication of novel materials. Using the new rf ion source in conjunction with the internal antenna system, the plasma density achieves excellent uniformity both laterally and axially. The system also incorporates two metal sources, including four metal arc sources and a sputtering electrode, so that multiple metal deposition and implantation steps can be performed in succession in the same equipment without exposing the samples to air. This capability can be critical to the study of surface properties and corrosion resistance. This article describes the design objectives, the novel features, and the characteristics of this new generation PIII equipment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147959
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  • 6
    Electronic Resource
    Electronic Resource
    Vacuum arc plasma transport through a magnetic duct with a biased electrode at the outer wall (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3329-3331 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Metal plasma formed by a vacuum arc plasma source can be passed through a toroidal-section magnetic duct for the filtering of macroparticles from the plasma stream. In order to maximize the plasma transport efficiency of the filter the duct wall should be biased, typically to a positive voltage of about 10–20 V. In some cases it is not convenient to bias the duct, for example if the duct wall is part of the grounded vacuum system. However, a positively biased electrode inserted into the duct along its outer major circumference can serve a similar purpose. In this article, we describe our results confirming and quantifying this effect. We also show the parametric dependence of the duct transport on the experimental variables. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149913
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence in strained InGaAs/GaAs superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2079-2082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present measurements and analysis of high-quality photoluminescence (PL) data from strained In0.13Ga0.87As quantum wells confined by unstrained GaAs barriers. Data were obtained from low temperature to room temperature on peak positions, intensities, and linewidth. The latter exhibits an unusual minimum at 31 K consistent with defect binding of excitons and one monolayer fluctuations in well size. The high-temperature linewidth agrees with that expected for phonon scattering. Peak positions show excellent agreement with a Kronig–Penny model augmented by a variational calculation of the n=1 bound-state energy of the heavy-hole exciton.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338011
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  • 8
    Electronic Resource
    Electronic Resource
    Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2806-2809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Acceptor depth distributions measured using differential capitance-voltage profiling, and atom depth distributions measured using secondary ion mass spectrometry are reported for aluminum implanted in the random and the 〈100〉, 〈110〉, and 〈111〉 directions of the silicon crystal in the ion energy range from 5 to 300 keV, and show agreement between the two measurements for selected energies and with one prior work. Values of range parameters, maximum channeling ranges, and electronic stopping Se are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337061
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  • 9
    Electronic Resource
    Electronic Resource
    Investigation of dose uniformity on the inner races of bearings treated by plasma immersion ion implantation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 120-123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma immersion ion implantation (PIII) is an effective technique for the surface modification of industrial components possessing an irregular shape. We have recently used PIII to treat a real industrial ball bearing to enhance the surface properties of the race surface on which the balls roll. The implantation dose uniformity along the groove is assessed using theoretical simulation and experiments. The two sets of results agree very well, showing larger doses near the center. However, the highest dose is not observed at the bottom or center of the groove, but rather offset toward the side close to the sample platen when the bearing is placed horizontally. The minimum dose is observed near the edge or corner of the groove and our model indicates that it is due to the more glancing ion incidence as a result of the evolution of the ion sheath near the corner. The dose nonuniformity along the groove surface is about 40% based on our experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370708
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  • 10
    Electronic Resource
    Electronic Resource
    Computed electron oscillation inside the duct of a vacuum arc source (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6381-6384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A three-dimensional numerical model has been developed to simulate the motion of electrons inside the duct of a vacuum arc metal source. It is found that electrons will travel back and forth along the center axis inside the duct tube. This phenomenon of electron oscillation can be explained by the combined effects of the electric and magnetic fields. The electron oscillation will increase the charge state of the positive ions and the ions will gain more energy. Due to the influence of electron oscillation, the plasma throughput of the duct will be different from that of a duct under the influence of only the magnetic field. This finding should be taken into account when designing metal arc sources and optimizing their performance. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370103
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