Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBaCuO have been prepared with (1) the a axis perpendicular to (100) SrTiO3 ; (2) the c axis perpendicular to (100) SrTiO3 ; and (3) the [110] axis perpendicular to (110) SrTiO3. Films were fabricated using a multilayer deposition technique involving three electron guns containing Y, BaF2, and Cu under a pressure of 5×10−5 Torr of O2. As deposited films, which contained polycrystalline and amorphous regions, were later annealed in a furnace under a flowing O2-H2 O atmosphere. X-ray diffraction patterns as well as scanning electron microscopy and high-resolution electron microscopy images confirm that the films are highly oriented, essentially epitaxial. The a-axis oriented film exhibits zero resistance at 90 K and a critical current density of 2.9×106 A/cm2 at 4.2 K while the c-axis oriented film exhibits a Tc of 88 K and a Jc of 0.9×107 A/cm2 at 4.2K; the Jc values were determined magnetically. The [110]-orientation film shows the sharpest transition with a transition width of 1 K and zero resistance at 85 K.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4240-4246 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the magnetic hysteresis loops and temperature dependent trapped fields in melt-textured YBa2Cu3O7−δ samples before and after p+ and 3He++ irradiation using a Hall effect magnetometer (HEM) as well as a commercial vibrating sample magnetometer (VSM). For proper 3He++ fluence, the critical current density may be enhanced by a factor of 10. Calculations based on various critical state models show that before the irradiation, the hysteresis loops can be well accounted for by a critical current density of a modified power law field dependence Jc(T,B)=J0(T)/(1+B/B0)n with n=1/2; after the irradiation, the best fit has been achieved by using an exponential form such as Jc(T,B)=J0(T)exp(−B/B0), where B0 is a model dependent parameter. Jc and its field dependence deduced from HEM hysteresis loops are in good agreement with those deduced from the VSM loops, suggesting that the Hall effect magnetometer can be conveniently used to characterize bulk high Tc oxide superconductors.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of spin valve films with synthetic antiferromagnet (SAF) pinned by antiferromagnetic IrMn, NiO, and NiMn layers were studied. The SAF layer enhances the thermal stability in general; however, the blocking temperature (and the blocking temperature distribution) of the antiferromagnet is still important for the magnetic rigidity of the pinned layer. Once the temperature reaches the blocking temperature the SAF layer can go into either the spin flip or flop state, depending upon the magnetic moment ratio of the reference layer and pinned layers. The GMR linear head response can be distorted for nonlinearity. The NiMn pinned SAF structure shows magnetic and thermal stability which makes it practical for the real products. A high GMR of 11% can be obtained in both bottom and top NiMn SAF spin valves by advanced processes. Recording heads were built using such stacks which demonstrated recording areal density of 20 Gbit/in.2 and beyond. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2127-2131 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A sputtering deposition system has been developed to grow high-quality superconductor/insulator multilayers specifically for use in fabricating vertically stacked Josephson junctions. A unique feature of the design is the computer control of all parameters involved in the repetitive deposition of multilayers. The computer is interfaced with stepper motors that position the substrate, and shutter wheels. Additional computer controlled stepper motors allow in situ changing of up to five contact masks. The computer is also interfaced to a gas flowmeter that controls the partial pressure of the inert and reactive sputtering gases. High-quality, reproducible multilayer films have been produced and are described. Stacked Josephson junctions have been patterned with the multilayer films and some of their electrical characteristics are presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5379-5380 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Kaufman-type 5 cm convex gridded ion-beam source is characterized in terms of angle-resolved ion-beam current density and beam uniformity at various discharge currents, electromagnet currents, and acceleration potentials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 21 (2003), S. 0 
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Widespread evidence for ultrahigh-pressure (UHP) metamorphism is reported in the Dulan eclogite-bearing terrane, the North Qaidam–Altun HP–UHP belt, northern Tibet. This includes: (1) coesite and associated UHP mineral inclusions in zircon separates from paragneiss and eclogite (identified by laser Raman spectroscopy); (2) inclusions of quartz pseudomorphs after coesite and polycrystalline K-feldspar + quartz in eclogitic garnet and omphacite; and (3) densely oriented SiO2 lamellae in omphacitic clinopyroxene. These lines of evidence demonstrate that the Dulan region is a UHP metamorphic terrane. In the North Dulan Belt (NDB), eclogites are characterized by the peak assemblage Grt + Omp + Rt + Phn + Coe (pseudomorph) and retrograde symplectites of Cpx + Ab and Hbl + Pl. The peak conditions of the NDB eclogites are P = 2.9–3.2 GPa, and T = 631–687 °C; the eclogite shows a near-isothermal decompression P–T path suggesting a fast exhumation. In the South Dulan Belt (SDB), three metamorphic stages are recognized in eclogites: (1) a peak eclogite facies stage with the assemblage Grt + Omp + Ky + Rt + Phn at P = 2.9–3.3 GPa and T = 729–746 °C; (2) a high-pressure granulite facies stage with Grt + Cpx (Jd 〈 30) + Pl (An24–29) + Scp at P = 1.9–2.0 GPa, T = 873–948 °C; and (3) an amphibolite facies stage with the assemblage Hbl + Pl + Ep/Czo at P = 0.7–0.9 GPa and T = 660–695 °C. The clockwise P–T path of the SDB eclogites is different from the near-isothermal decompression P–T path from the NDB eclogites, which suggests that the SDB was exhumed to a stable crustal depth at a slower rate. In essence these two sub-belts formed in different tectonic settings; they both subducted to mantle depths of around 100 km, but were exhumed to the Earth's surface separately along different paths. This UHP terrane plays an important role in understanding continental collision in north-western China.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1813-1815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≈7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2949-2954 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the static I–V characteristics and cavity modes in stacked double Nb/AlOx/Nb Josephson junctions. In junction stacks consisting of two junctions with identical critical currents Ic, the Ic vs H characteristics have been observed to deviate from the usual Fraunhofer pattern in the small junction limit; the data are consistent with a model involving a structural phase transformation to a triangular vortex lattice with increasing H. In a finite voltage state interlayer coupling leads to splitting of the Swihart mode, which manifests itself as Fiske steps with different voltage spacings. The results provide clear evidence that the two junctions in the stack do phase lock. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1503-1505 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4–10−2 Torr) and low substrate temperature (600–680 °C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1293-1295 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of oxide–semiconductor interfaces formed by wet thermal oxidation of a thin epitaxial AlAs layer. Photoluminescence (PL) from a quantum well in close proximity to the interface is monitored before and after oxidation. The normalized PL intensity was found to decrease roughly in proportion to the degree of completeness of the oxidation. The diminishing luminescence is attributed to the presence of trap states formed at the oxide–semiconductor interface formed during the oxidation process; hydrogen ion treatment is effective in the partial restoration of the luminescence. In addition to the traps, the oxidation process also "disorders" the material within ∼15 nm from the semiconductor–oxide interface, as revealed by transmission electron micrographs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...