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  • 1990-1994  (22)
  • 1990  (22)
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  • 1990-1994  (22)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Characterization of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures grown by molecular-beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4029-4034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper compares Hall-effect measurements combined with rapid thermal annealing (RTA) and low-temperature photoluminescence (4-K PL) as characterization techniques for the optimization of the growth of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures. The Hall-effect measurements with the RTA were used to determine the optimized growth temperature. 4-K PL was used to determine the quality of the InGaAs quantum well and the In mole fraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346239
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ion milling damage in InP and GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2760-2768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-surface damage created by Ar+ ion milling in InP and GaAs was characterized by capacitance-voltage, current-voltage, photoluminescence, ion channeling, and transmission electron microscopy. We find no evidence of amorphous layer formation in either material even for Ar+ ion energies of 800 eV. Low ion energies (200 eV) create thin (≤100 A(ring)) damaged regions which can be removed by annealing at 500 °C. Higher ion energies (≥500 eV) create more thermally stable damaged layers which actually show higher backscattering yields after 500 °C annealing. Heating to 800 °C is required to restore the near-surface crystallinity, although a layer of extended defects forms in GaAs after such a treatment. No dislocations are observed in InP after this type of annealing. The electrical characteristics of both InP and GaAs after ion milling at ≥500 eV cannot be restored by annealing, and it is necessary to remove the damaged surface by wet chemical etching. For the same Ar+ ion energies the damaged layers are deeper for InP than for GaAs after 500 eV ion milling at 45° incidence angle. Removal of ∼485 and ∼650 A(ring) from GaAs and InP, respectively, restores the initial current-voltage characteristics of simple Schottky diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346453
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Tungsten metallization for stable and self-aligned InP-based laser devices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3110-3113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten thin films on n-InP layers have been investigated for potential use as a refractory ohmic contact for self-aligned In-based etched mesa buried heterostructure laser devices. The W films were rf sputter deposited onto InP substrates, S doped in the range of 1×1018–1×1019 cm−3. The deposition parameters were optimized to produce films with the lowest possible induced stress, minimum argon content, and best morphology for as-deposited wafers and after undergoing reactive-ion etching and high-temperature thermal cycles (700 °C), which are required for the self-aligned technology. These parameters were obtained for films that were rf sputter deposited at a discharge power of 240 W and under argon pressure of about 10 mTorr. A thermal expansion coefficient of 5.84×10−6 C−1 and a biaxial elastic modulus of 0.97×1012 Pa were measured for the films. The electrical behavior of the W films sputtered onto n-InP was studied by means of I-V and contact resistance measurements, which revealed a linear ohmic contact as-deposited, while sputtered onto n-InP substrates, S doped to the level of 5×1018 cm−3 or higher. Rapid thermal processing at elevated temperatures improved the ohmic contact quality and decreased the specific contact resistance values to a minimum of 3.5×10−6 Ω cm2 as a result of heating the W/InP (S doped 1×1019 cm−3) at 600 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346405
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 902-905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≈4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346757
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  • 5
    Electronic Resource
    Electronic Resource
    Reproducible group-V partial pressure rapid thermal annealing of InP and GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2482-2488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the effectiveness of two types of SiC-coated graphite susceptors in providing degradation-free rapid thermal annealing of InP and GaAs. The first type of susceptor must be charged with the group-V species prior to any annealing cycles. Under the optimum charging conditions, effective surface protection is provided for up to five sequential high-temperature (900 °C, 10 s) anneals of GaAs, or only one anneal (750 °C, 10 s) of InP before recharging is necessary. The incorporation of small reservoirs into the susceptor allows for the provision of a constant group-V partial pressure over the wafer, and it appears that for this type of susceptor many dozens of InP or GaAs wafers can be annealed without any apparent surface degradation. The relative merits of using InAs, GaAs, or InP as the group-V source in the reservoirs have been compared, and it is found that the best protection is achieved when one uses the same semiconductor in the reservoirs as is being annealed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346510
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogen in carbon-doped GaAs grown by metalorganic molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2561-2563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic profiles show that hydrogen is incorporated in GaAs:C that has been grown by metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be about 5% of the carbon concentration for our growth conditions. An infrared absorption study shows that this hydrogen is involved in stable C-H complexes. At the lower C concentrations (〈1019 cm−3) the CAs-H complex is the dominant species involving C and H. At higher C concentrations new complexes involving C and H appear.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103817
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  • 7
    Electronic Resource
    Electronic Resource
    High-energy (56 MeV) oxygen implantation in Si, GaAs, and InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2253-2255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth profiles measured by secondary-ion mass spectrometry of 56 MeV oxygen ions implanted into Si, GaAs, and InP are reported. Most of the oxygen is contained within a sharp (full width at half maximum ∼2 μm) non-Gaussian profile centered at ∼31 μm in GaAs, ∼36 μm in InP, and ∼46 μm in Si, with the distribution skewed towards greater depths. The experimental projected ranges appear to be 10% larger than theoretical predictions. Changes in the electrical, optical, and structural properties of the material were measured by transmission electron microscopy (TEM), photoluminescence, and spreading resistance profiling. In the as-implanted Si, the maximum perturbation in the electrical properties occurs at ∼37 μm. No defects are visible by TEM in any of the as-implanted semiconductors for oxygen ion doses of 1.35×1015 cm−2 but the photoluminescent intensity in GaAs and InP is reduced by more than an order of magnitude as a result of this type of implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103906
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogenation of GaAs-on-InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 887-889 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Incorporation of atomic hydrogen into heteroepitaxial Si-doped GaAs layers grown directly on InP substrates by organometallic vapor phase epitaxy produces substantial increases in the reverse bias breakdown voltage of TiPtAu Schottky diodes fabricated on the GaAs-on-InP. Plasma hydrogenated diodes annealed at 400 °C to restore the electrical activity of the passivated shallow donors have reverse breakdown voltages (VB) of ∼6.5 V compared to 4.5 V for untreated samples. The increases in VB are stable to 500 °C annealing for 5 min. Atomic profiling of deuterated samples showed substantial outdiffusion of deuterium from the GaAs at 600 °C, with increasing accumulation at the heterointerface. The deuterium in this disordered region after 600 °C annealing is in a relatively immobile, electrically inactive state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103394
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 294-296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole concentrations in excess of 1020 cm−3 have been achieved in AlxGa1−xAs using carbon doping during metalorganic molecular beam epitaxy. Hall and secondary-ion mass spectrometry measurements show a 1:1 correspondence between the hole density and carbon concentration in as-grown samples, although post-growth annealing at 900 °C leads to a reduction in the net free-carrier concentration (typically a decrease of ∼40% for 30 s anneals). The carbon-localized vibrational modes (LVMs) show fine structure due to the presence of three different symmetries for substitutional carbon CAs, namely Td, C2v, and C3v. The experimental CAs LVM line positions are in remarkable agreement with the predictions of a rigid ion model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103718
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2928-2930 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy is studied. Just as in uniformily Si-doped GaAs, exposure of the δ-doped material to a low frequency (30 kHz) hydrogen plasma at 250 °C for 30 min deactivates the Si donors in the δ spikes. For samples with Si doping of (1–6)×1018 cm−3, carrier concentration in the spikes decreased by nearly three orders of magnitude following hydrogenation. Secondary-ion mass spectrometric analysis of deuterated samples confirmed trapping of deuterium in the Si-doped spikes. Consistent with the deactivation of Si donors following hydrogenation, changes were observed in the near-band edge luminescence spectrum at 4.2 K, which showed in the hydrogenated sample the absence of Burstein–Moss shift that was observed in the as-grown sample. This hydrogen-induced passivation of Si donors in the δ spikes can be of benefit in selectively deactivating donor atoms in device applications, and also provide a method for tailoring the hydrogen distribution in an epitaxial structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103733
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