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  • 2005-2009  (1)
  • 1985-1989  (17)
  • 1
    Electronic Resource
    Electronic Resource
    Measurement of bunch lengthening in TERAS : International conference on synchrotron radiation instrumentation (SRI−88) (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1748-1751 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The bunch length was measured by using a highly sensitive streak camera with a time resolution of 2 ps. It was found that fine structures appeared in the electron bunch shape and that the shapes of electron bunches were described by a Gaussian distribution on the average. The dependence of bunch length on beam current was measured for an electron beam of 607 MeV. The bunch length was well represented by a power function of beam current with an exponent of 0.197 at currents lower than 35 mA or 0.30 at high currents. The experimental results suggest that the longitudinal coupled-bunch beam instability takes place at low beam currents and the turbulent instability dominates at high currents. It was also found from the three-dimensional bunch shape measurements that the bunch shape tended to blow up at high currents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140945
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  • 2
    Electronic Resource
    Electronic Resource
    Enhancement of ultraviolet-induced apoptosis by NF-κB decoy oligonucleotides (2005)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 153 (2005), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background  A decoy strategy utilizing oligonucleotides (ODN) containing the specific binding sequence of a certain transcription factor has been developed and is considered to be a potential new class of antigene therapy. However, the application of this new therapeutic modality to skin diseases has not been fully documented.Objectives  The aim of this work was to examine the effects of the nuclear factor (NF)-κB decoy ODN on UV-elicited skin change.Methods  Mouse keratinocyte Pam 212 cells were transfected with NF-κB decoy ODN to examine the effects of the decoy ODN on ultraviolet (UV) B-induced apoptosis. Tape-stripped rat dorsal skin was treated with an ointment containing NF-κB decoy ODN for the examination of the in vivo impact of the decoy ODN on sunburned cell (SBC) formation and UVB erythema.Results  NF-κB decoy ODN specifically induced apoptosis of Pam 212 cells and SBC formation was significantly enhanced by topical NF-κB decoy ODN ointment, while UV-induced erythema was not affected.Conclusions  These data suggest that enhancement of UV-induced apoptosis by NF-κB decoy ODN may play a cancer-preventive role by further eliminating photodamaged keratinocytes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.2005.06969.x
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  • 3
    Electronic Resource
    Electronic Resource
    Ultrastructural study of calcinosis universalis with dermatomyositis (1986)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of cutaneous pathology 13 (1986), S. 0 
    Details
    ISSN: 1600-0560
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Calcinosis universalis associated with dermatomyositis occurred in a 58-year-old woman. Tissues removed from the sublingual region in the patient were studied by ordinary microscopy, electron microscopy, and an electron-microanalytic method. The calcified materials were distributed on collagen fibers and seemed to have a relationship with foci of fibrinoid degeneration. Moreover, globular and/or membranous structures, considered to originate from the degenerate cells of the stroma, were observed in these calcified zones. Some of them contained electron-dense materials. Therefore, the globular and/or membranous structures were thought to be concerned with initial calcification in this case. Furthermore, irregular bone tissue was formed adjacent to the calcified masses. In addition, the calcified materials were identified by X-ray diffraction examination and electron microscopy as hydroxyapatite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0560.1986.tb01514.x
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  • 4
    Electronic Resource
    Electronic Resource
    A thin-film transistor with a very thin a-Si:H layer and its application for an LC panel (1986)
    Springer
    Applied physics 41 (1986), S. 311-314 
    Details
    ISSN: 1432-0630
    Keywords: 73.40.Qv ; 73.60.Fw ; 86.60.Pg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract One of the disadvantages of applying an a-Si:H thin-film transistor (TFT) to an active matrix-addressed liquid crystal (LC) panel is that a TFT with an a-Si:H has a very large photo-leakage current because of the high photo-conductivity of an a-Si:H itself. We have tried decreasing the photo-leakage current by varying the thickness of an a-Si:H layer (L) in TFTs and investigated the characteristics of TFTs, mainly drain voltage versus drain current containing photo-leakage current (I ph). As a result, it is shown that lnI ph is proportional to InL, and its gradient is 1.5–2.0. We assume that the thinner an a-Si:H layer is, the more effective the recombination of carriers at the interface states is forI ph. We have applied TFT with a very thin a-Si:H layer (∼30nm) to a full-color active matrix-addressed LC panel for a moving picture display and realized a display of good quality under illuminated condition of 5×104lx without a shading layer in it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616054
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  • 5
    Electronic Resource
    Electronic Resource
    A simple and rapid way of forming a disk-shaped specimen from oxide melts (1985)
    Springer
    Journal of materials science 4 (1985), S. 1425-1426 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00720119
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-beam sputtering apparatus for deposition of multilayered films (1988)
    Springer
    Journal of materials science 7 (1988), S. 79-80 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01729923
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Ion-beam sputtering apparatus with a simplified accelerator system for deposition of thin films (1987)
    Springer
    Journal of materials science 6 (1987), S. 437-438 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01756789
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  • 8
    Electronic Resource
    Electronic Resource
    Thermal stability of rapidly quenched films in the Bi2O3-MO3 (M = Mo, W) systems (1987)
    Springer
    Journal of materials science 6 (1987), S. 413-414 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01756780
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  • 9
    Electronic Resource
    Electronic Resource
    Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering (1989)
    Springer
    Journal of materials science 24 (1989), S. 187-191 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×10−3 Ω cm (as-deposited) to higher than ∼ 105 Ω cm (annealed).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00660952
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  • 10
    Electronic Resource
    Electronic Resource
    Surface layers produced by ion nitriding of austenitic Fe-Mn-Al alloys and the effects on hardness and corrosion resistance (1988)
    Springer
    Journal of materials science 23 (1988), S. 4445-4449 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Austenitic (fcc) Fe-Mn-Al alloys were nitrided in the temperature range 723 to 973 K by a glow discharge method using H2-N2 gas mixtures, and the microstructures and compositions of the nitrided layers were investigated in detail. A thin surface layer and a thick nitrogen-diffused layer (internal nitrided layer) were produced; the former consisted of both manganese nitrides and a ferritic (bec) phase, while the internal nitrided layer had an austenitic structure with the incorporated excess nitrogen atoms. X-ray photoelectron spectra revealed that the incorporated nitrogen atoms have a strong interaction with aluminium lattice atoms. By nitriding, hardness values of the Fe-Mn-Al alloys were increased fromH v = 350 to ca. 1000, and the corrosion resistance to sulphuric acid solution was enhanced by a factor of 30. These improvements are associated with a uniform distribution of the incorporated nitrogen and also with the presence of nitride-like interactions between the nitrogen and aluminium atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00551943
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