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  • 1
    Electronic Resource
    Electronic Resource
    Thermally stable spin valve films with synthetic antiferromagnet pinned by NiMn for recording heads beyond 20 Gbit/in.2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5720-5722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of spin valve films with synthetic antiferromagnet (SAF) pinned by antiferromagnetic IrMn, NiO, and NiMn layers were studied. The SAF layer enhances the thermal stability in general; however, the blocking temperature (and the blocking temperature distribution) of the antiferromagnet is still important for the magnetic rigidity of the pinned layer. Once the temperature reaches the blocking temperature the SAF layer can go into either the spin flip or flop state, depending upon the magnetic moment ratio of the reference layer and pinned layers. The GMR linear head response can be distorted for nonlinearity. The NiMn pinned SAF structure shows magnetic and thermal stability which makes it practical for the real products. A high GMR of 11% can be obtained in both bottom and top NiMn SAF spin valves by advanced processes. Recording heads were built using such stacks which demonstrated recording areal density of 20 Gbit/in.2 and beyond. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372500
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic hysteresis of p+ and 3He++ irradiated melt-textured YBa2Cu3O7−δ (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4240-4246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the magnetic hysteresis loops and temperature dependent trapped fields in melt-textured YBa2Cu3O7−δ samples before and after p+ and 3He++ irradiation using a Hall effect magnetometer (HEM) as well as a commercial vibrating sample magnetometer (VSM). For proper 3He++ fluence, the critical current density may be enhanced by a factor of 10. Calculations based on various critical state models show that before the irradiation, the hysteresis loops can be well accounted for by a critical current density of a modified power law field dependence Jc(T,B)=J0(T)/(1+B/B0)n with n=1/2; after the irradiation, the best fit has been achieved by using an exponential form such as Jc(T,B)=J0(T)exp(−B/B0), where B0 is a model dependent parameter. Jc and its field dependence deduced from HEM hysteresis loops are in good agreement with those deduced from the VSM loops, suggesting that the Hall effect magnetometer can be conveniently used to characterize bulk high Tc oxide superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352236
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  • 3
    Electronic Resource
    Electronic Resource
    Pulsed organometallic beam epitaxy of complex oxide films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1503-1505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4–10−2 Torr) and low substrate temperature (600–680 °C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105301
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  • 4
    Electronic Resource
    Electronic Resource
    Superconducting YBa2Cu3O7−δ thin films with three different orientations (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4217-4220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBaCuO have been prepared with (1) the a axis perpendicular to (100) SrTiO3 ; (2) the c axis perpendicular to (100) SrTiO3 ; and (3) the [110] axis perpendicular to (110) SrTiO3. Films were fabricated using a multilayer deposition technique involving three electron guns containing Y, BaF2, and Cu under a pressure of 5×10−5 Torr of O2. As deposited films, which contained polycrystalline and amorphous regions, were later annealed in a furnace under a flowing O2-H2 O atmosphere. X-ray diffraction patterns as well as scanning electron microscopy and high-resolution electron microscopy images confirm that the films are highly oriented, essentially epitaxial. The a-axis oriented film exhibits zero resistance at 90 K and a critical current density of 2.9×106 A/cm2 at 4.2 K while the c-axis oriented film exhibits a Tc of 88 K and a Jc of 0.9×107 A/cm2 at 4.2K; the Jc values were determined magnetically. The [110]-orientation film shows the sharpest transition with a transition width of 1 K and zero resistance at 85 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344932
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  • 5
    Electronic Resource
    Electronic Resource
    Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1403-1405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO2/Si) substrates patterned in nanometer scale. The SiO2 thin film is found to be an efficient mask material for prohibiting the growth of InAs SAQDs, while the formation of stable SAQDs is observed on the exposed surface of Si. We have utilized this selectivity to demonstrate almost one-dimensional alignment of InAs SAQDs on Si stripes. The crystallinity of SAQDs is also identified by high-resolution transmission electron microscope observation. Our study opens up a possibility of reliably integrating III–V quantum dot devices with conventional Si circuits. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352049
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  • 6
    Electronic Resource
    Electronic Resource
    Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2607-2609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs' alignment along the patterns. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318393
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  • 7
    Electronic Resource
    Electronic Resource
    Anomalous Hall effect in (110)Fe/(110)Cr multilayers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 479-481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the Hall effect and the magnetoresistance in [110] textured Fe/Cr multilayers grown by electron beam evaporation. We have observed a strong magnetic field dependence of the Hall coefficient as well as a large magnetoresistance. In all cases the Hall voltage is positive. The ordinary Hall coefficient is positive at room temperature and changes sign at low temperatures; this is similar to the behavior of an antiferromagnet but differs from that observed in Fe-Cr alloys. The extraordinary Hall coefficient Rs is positive and varies with the resistivity ρ as Rs∝ρ2.6, suggesting the importance of interface scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105414
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  • 8
    Electronic Resource
    Electronic Resource
    Transport properties in n-type InSb films grown by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 964-966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the temperature and magnetic field dependence of the Hall mobility and transverse magnetoresistance in n-type InSb films epitaxially grown on GaAs substrates by metalorganic chemical vapor deposition. The films show a giant magnetoresistance: e.g., at 240 K the resistivity increases over 20 times at a magnetic field of 5 T; the low field coefficient of resistivity at 77 K is as high as 47.5 μΩ cm/G. The Hall mobility decreases with magnetic field and saturates at higher fields. By taking the interface carrier transport into account, the observed field dependence of the Hall mobility and magnetoresistance may be understood based on a two-layer model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109859
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  • 9
    Electronic Resource
    Electronic Resource
    TEMPORAL CHANGES IN THE YADKIN RIVER FLOW VERSUS SUSPENDED SEDIMENT CONCENTRATION RELATIONSHIP (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 40 (2004), S. 0 
    Details
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : Dynamic linear models (DLM) and seasonal trend decomposition (STL) using local regression, or LOESS, were used to analyze the 50-year time series of suspended sediment concentrations for the Yadkin River, measured at the U.S. Geological Survey station at Yadkin College, North Carolina. A DLM with constant trend, seasonality, and a log10 streamflow regressor provided the best model to predict monthly mean log10 suspended sediment concentrations, based on the forecast log likelihood. Using DLM, there was evidence (odds approximately 69:1) that the log10 streamflow versus log10 suspended sediment concentration relationship has changed, with an approximate 20 percent increase in the log10 streamflow coefficient over the period 1981 to 1996. However, sediment concentrations in the Yadkin River have decreased during the decade of the 1990s, which has been accompanied by a concomitant increase in streamflow variability. Although STL has been shown to be a versatile trend analysis technique, DLM is shown to be more suitable for discovery and inference of structural changes (trends) in the model coefficient describing the relationship between flow and sediment concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1752-1688.2004.tb01581.x
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  • 10
    Electronic Resource
    Electronic Resource
    Microencapsulation of Lactobacillus casei YIT 9018 using a Microporous Glass Membrane Emulsification System (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 68 (2003), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Microporous glass (MPG) membrane emulsification was used for micro encapsulation of Lactoba-cillus casei YIT 9018. Several process parameters of membrane emulsification were investigated for producing a stable emulsion. The droplet dia in the emulsion depended upon the membrane pore size. The monodispersed emulsion obtained by this technique resulted in well-formed microcapsules with a narrow particle size distribution. For artificial gastric acid and bile, the viable count of encapsulated cells was constant through the incubation time, while the count of nonencapsulated cells was significantly decreased. A storage stability test at different temperatures resulted in a viability of encapsulated cells 3 to 5 log cycles higher than the viability of nonencapsulated cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2003.tb14139.x
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