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  • 1
    Electronic Resource
    Electronic Resource
    Structure and biological activity of a host-specific toxin produced by the fungal corn pathogen Phyllosticta maydis (1984)
    s.l. : American Chemical Society
    Biochemistry 23 (1984), S. 759-766 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00299a027
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  • 2
    Electronic Resource
    Electronic Resource
    A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy (1980)
    Springer
    Applied physics 21 (1980), S. 257-261 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E c −0.65eV andE c −0.74eV) and one grown-in hole trap level (E v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886176
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  • 3
    Electronic Resource
    Electronic Resource
    Search for High Damping Metallic Glasses (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 319 (Sept. 2006), p. 151-156 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In a hydrogen-doped metallic glass, there appear low-temperature and high-temperatureinternal friction peaks respectively associated with a point-defect relaxation and the crystallization.The high-temperature-side slope of low-temperature peak and also the low-temperature-side slopeof high-temperature peak enhance the background internal friction near the room temperature. Ahydrogen-doped Mg-base metallic glass was proposed as a high-damping material to be used nearand somewhat above the room temperature. Stability of the high damping was also checked
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.319.151.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Internal Friction of Hydrogenated Ti (Ni,Cu) Shape Memory Alloys (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 319 (Sept. 2006), p. 39-44 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Effects of hydrogen doping on the internal friction (IF) of ternary Ti50Ni50-xCux (x=15, 20,25)[removed info] shape memory alloys, prepared by rolling and annealing laminating Ti and Ni-Cu alloy sheets,have been measured with a damping mechanical analyzer in a forced bending oscillation mode attemperatures from 173K to 423K at three frequencies, 0.1, 1 and 5Hz. The effects of hydrogendoping on IF are common to the three alloys: a hydrogen IF peak appears at around 260K; the IFpeak value (tanφ) increases rapidly with increasing hydrogen concentration up to tanφ=0.03 at0.5at% and then decreases; the peak temperature also increases rapidly and then gradually decreases.From the frequency dependence of the peak temperature, the activation energy E and thepre-exponential factor ω0 have been analyzed to be E=0.6-0.7eV and ω0=1013-14s-1. The origin of thehydrogen IF is interpreted to be the Snoek-Koester effect due to interaction of twin boundarydislocations and segregated hydrogen atoms. Effects of hydrogen on mechanical properties of thealloys have also been studied
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.319.39.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of CuIn5S8 single crystals (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1875-1879 
    Details
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Molte proprietà ottiche e di trasporto sono state studiate sui cristalli singoli di tipon di CuIn5S8. Si è determinato che il gap di energia a 0 K dalle misurazioni elettriche è 1.4 eV. Si è trovata un'anisotropia dell'effetto di magnetoresistenza e si è suggerito che i minimi della banda di conduzione siano situati in punti lungo le direzioni [100] nello spaziok. Si è trovata una banda di assorbimento ottico in una regione dell'infrarosso di (1÷1.6) μm, che è state attribuita alle transizioni delle piú basse bande di conduzione situate lungo le direzioni [100] a una piú alta banda di conduzione.
    Abstract: Резюме Исследуются некоторые транспортные и оптические свойства монокристаллов CuIn5S8 n-типа. Из электрических измерений определяется энергетическая щель при 0 К, которая составляет 1.4 эВ. Обнаружена анизотропия магниторезистивного эффекта. Предполагается, что минимумы зоны проводимости расположены в точках вдоль направления [100] вk-пространстве. Обнаружена оптическая зона поглощения в инфракрасной области (1÷1.6) мкм, которая связана с переходами из нижней зоны проводимости, расположенной вдоль направлений [100], В верхнюю зону проводимости.
    Notes: Summary Several transport and optical properties have been studied onn-type CuIn5S8 single crystals. The energy gap at 0 K was determined from the electrical measurements to be 1.4 eV. An anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions ink-space. An optical-absorption band was found in an infrared region of (1÷1.6) μm and was attributed to the transitions from the lowest conduction band situated along the [100] directions to an upper conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457879
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  • 6
    Electronic Resource
    Electronic Resource
    New severe strains of Melon necrotic spot virus: symptomatology and sequencing (2005)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 54 (2005), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: New strains of Melon necrotic spot virus (MNSV), designated MNSV-YS and MNSV-KS, caused much more severe growth retardation on melon plants than MNSV-NH, which was previously reported as the most severe strain of MNSV in Japan. MNSV-YS spread much more quickly than MNSV-NH in infected plants, and induced more severe growth retardation, even though the appearance of necrotic lesions on inoculated cotyledons was much slower. MNSV-KS had properties intermediate between those of the other two strains. The results suggest that faster-spreading strains can multiply more rapidly as a result of lower levels of activity in inducing necrotic lesions in melon plants. The complete sequences of MNSV-YS and MNSV-KS were determined, and an RT–PCR–RFLP method based on these sequences was successfully developed to detect and discriminate between the three strains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.2005.01253.x
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  • 7
    Electronic Resource
    Electronic Resource
    Experimental investigation of geologically produced antineutrinos with KamLAND (2005)
    [s.l.] : Nature Publishing Group
    Nature 436 (2005), S. 499-503 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The detection of electron antineutrinos produced by natural radioactivity in the Earth could yield important geophysical information. The Kamioka liquid scintillator antineutrino detector (KamLAND) has the sensitivity to detect electron antineutrinos produced by the decay of 238U and ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature03980
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  • 8
    Electronic Resource
    Electronic Resource
    Anomalous origin of the anterior inferior cerebellar arteries from the internal carotid artery (1980)
    Springer
    Neuroradiology 19 (1980), S. 105-109 
    Details
    ISSN: 1432-1920
    Keywords: Anterior inferior cerebellar artery ; Internal carotid artery ; Persistent primitive trigeminal artery ; Carotid angiography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Two cases of the anterior inferior cerebellar arteries originating from the cavernous and precavernous segments of the internal carotid artery are reported. In one case the course of the anomalous artery was confirmed by autopsy. This anomalous artery is considered to be a variant of persistent primitive trigeminal artery. The clinical significance is discussed briefly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00342605
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  • 9
    Electronic Resource
    Electronic Resource
    Cathodoluminescence studies of dislocation motion in IIb–VIb compounds deformed in SEM (1981)
    Springer
    Journal of materials science 16 (1981), S. 927-934 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Continuous observation of dislocation motion on the specimen surface of IIb–VIb semiconducting compounds (CdS and CdTe) has been made using a scanning electron microscope (SEM) with the cathodoluminescence (CL) by use of a deformation apparatus installed in the SEM chamber. With the application of stress, SEM-CL patterns revealed an increasing density of dark spots that formed dark stripes along slip traces. For both CdS and CdTe crystals, regardless of the slip system involved, the dark spots corresponding to individual dislocations appeared in the SEM field without displaying their moving state and seldom disappeared, indicating that dislocations are immobilized after they travel a certain distance from the source with a high velocity. The investigation of slip-band growth in CdS showed that screw bands on the basal plane exhibit the photoplastic effect, whereas those on the prismatic plane do not, in accordance with the macroscopic deformation tests.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00542736
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