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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3792-3794 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality ultraviolet photoconductive detectors have been fabricated using GaN layers grown by low-pressure metalorganic chemical vapor deposition on (11⋅0) sapphire substrates. The spectral responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped sharply by almost three orders of magnitude for wavelengths longer than 365 nm. The kinetics of the photoconductivity have been studied by the measurements of the frequency-dependent photoresponse and photoconductivity decay. Strongly sublinear response and excitation-dependent response time have been observed even at relatively low excitation levels. This can be attributed to redistribution of the charge carriers with increased excitation level. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 22-24 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2542-2544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three papers published recently [P. M. Young, C. H. Grein, H. Ehrenreich, and R. H. Miles, J. Appl. Phys. 74, 4774 (1993); G. M. Williams, J. Appl. Phys. 77, 4153 (1995); C. H. Grein, M. E. Flatte, H. Ehrenreich, and R. H. Miles, J. Appl. Phys. 77, 4156 (1995)] concerning the comparison of theoretically predicted performance of HgCdTe photodiodes with InAs/InGaSb superlattice photovoltaic detectors are obscure with respect to optimal selection of HgCdTe photodiode structures. Both Comments [G. M. Williams, J. Appl. Phys. 77, 4153 (1995); C. H. Grein, M. E. Flatte, H. Ehrenreich, and R. H. Miles, J. Appl. Phys. 77, 4156 (1995)] have not noticed the important results of papers published by Humpreys [Infrared Phys. 23, 171 (1983); Infrared Phys. 26, 337 (1986)], who critically reexamined the role of a radiative mechanism in the detection of infrared radiation. To explain our point of view on competition between InAs/InGaSb SLs and "bulk'' HgCdTe detectors, we present a generalized model of an infrared photodetector and derive the figure merit of any material for infrared photodetector as the ratio of absorption coefficient to the thermal generation rate. This determines the detectivity of infrared photodetectors. Using that model for the most common n+-p and p+-n long wavelength HgCdTe photodiodes, it is shown that the highest performance can be obtained with a low doping of the base photodiode regions. This means that the previously assumed (Young et al.) highly doped HgCdTe photodiode structure with a thick base region is far from optimal. Our calculations carried out for optimal device structures indicate that the ultimate detectivities of long wavelength HgCdTe photodiodes operating at 77 K are higher than those for InAs/InGaSb SLs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2645-2647 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p+-InSb/π-InAs1−xSbx/n+-InSb heterojunction photodiodes operating at near room temperature in the 8–13 μm region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≈0.85 sample. The voltage responsivity-area product of 3×10−5 V cm2/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≈1.5×108 cm Hz1/2/W. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2028-2030 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large-area GaN photovoltaic structures with p-n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n- and p-type regions. The diffusion length of holes in the n-type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 99-101 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long-wavelength InAs1−xSbx photoconductors operated without cryogenic cooling are reported. The devices are based on p-InAs1−xSbx/p-InSb heterostructures grown on (100) semi-insulating GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Photoreponse up to 14 μm has been obtained in a sample with x=0.77 at 300 K, which is in good agreement with the measured infrared absorption spectra. The corresponding effective lifetime of ≈0.14 ns at 300 K has been derived from stationary photoconductivity. The Johnson noise limited detectivity at λ=10.6 μm is estimated to be about 3.27×107 cm Hz1/2/W at 300 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1432-0738
    Keywords: Bismuth-organ distribution ; Bismuth-binding to kidney proteins ; Selenite-effect on distribution and bismuth binding
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Nach einmaliger und wiederholter subkutaner Verabreichung wurde Wismut zu mehr als 50% der „erreichbaren Menge” in den Nieren gefunden. Es war dort vorwiegend in der löslichen Frakion und in großem Umfang an einen Eiweißstoff vom Molekulargewicht 7000 gebunden. Bei wiederholter erabreichung von Wismut wurde auch dieser Eiweißstoff vermehrt gefunden. Die gleichzeitige Verabreichung von Selen erhöhte die „verfügbare Menge” von Wismut, wahrscheinlich wegen eingeschränkter Ausscheidung. Zugleich wurden Unterschiede in der Organverteilung von Wismut festgestellt. Der Anteil in den Nieren wirde geringer und derjenige in Leber und sonstigen. Organen größer. Der Eiweißkomplex mit dem Molekulargewicht 7000 verschwand gänzlich. Die durch Wismut stimulierte Synthese dieses Eiweißstoffes wirde aber nicht ganz verhindert.
    Notes: Abstract Subcutaneous administration of bismuth, both single and multiple, resulted in deposition of this metal mainly in the kidneys which contained over 50% of the ‘accessible pool’ of bismuth. In the kidneys bismuth was bound mainly by the soluble fraction in which it was complexed with a protein of molecular weight of about 7000. Multiple administration of bismuth increased the level of this protein. Selenite administration brought about an increase in the ‘accessible pool’ of bismuth, probably due to a drop in excretion, and also changes in the organ distribution of this metal. The retention in the kidneys was diminished while those in the liver and in other tissues were augmented. These changes were accompanied by a change in the chemical form of bismuth present in the kidneys manifested by the total disappearance of the protein complex of molecular weight of 7000. The increased synthesis of this protein due to bismuth administration was not abolished completely.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular life sciences 33 (1977), S. 1624-1625 
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary The level of metallothionein-like proteins was determined in different tissues of 6 animal species. The highest concentrations were found in pig and rat tissues. The organs richest in metallothionein-like proteins included: kidneys (101–305 μg/g), intestine (127–257 μg/g) and liver (54–496 μg/g).
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Archives of toxicology 37 (1976), S. 57-66 
    ISSN: 1432-0738
    Keywords: Mercury, inorganic, subcellular distribution ; Mercury, inorganic, biocomplexes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Anorganisches Quecksilber, Ratten in einer einzelnen Dose von 0,5 mg Hg/kg verabreicht, wurde in den Nieren vorwiegend in der löslichen (54%) und in der Kern-Fraktion (30%) angereichert, und in beiden Fraktionen wurde eine zeitabhängige Abnahme festgestellt. In der mitochondrialen und mikrosomalen Fraktion, in denen zuerst ca. 11 und 6% Quecksilber gefunden wurde, konnte über die erste Woche eine zunehmende Tendenz festgestellt werden. In der löslichen Fraktion waren die metallothionein-ähnlichen Eiweißstoffe von niedrigem Molekulargewicht vorwiegend für die Bindung von Quecksilber verantwortlich. In anderen Zell-Fraktionen war Quecksilber meistens an Eiweiß-stoffe von hohem Molekulargewicht gebunden.
    Notes: Abstract Inorganic mercury, administered to rats in a single dose of 0.5 mg Hg/kg is accumulated in the kidneys mainly in the soluble (54%) and nuclear (30%) fractions, showing decreasing tendency with time. Mitochondrial and microsomal fractions, initially accumulating approx. 11 and 6% of total Hg, show a tendency to increase the absolute level of Hg for the first week after administration. In the soluble fraction low-molecular weight, metallothioneinlike proteins are mainly responsible for the accumulation of mercury, in other fractions proteins of higher molecular weight prevail.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Bulletin of environmental contamination and toxicology 61 (1998), S. 22-30 
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
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