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  • 1
    Electronic Resource
    Electronic Resource
    Defects and ion redistribution in implant-isolated GaAs-based device structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6580-6586 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implant isolation of thick GaAs based epitaxial structures using either multiple energy keV ions or a single MeV ion implantation is becoming more popular for devices such as heterojunction bipolar transistors or quantum well lasers. We report examples of both types of isolation schemes, using keV F+ and H+ ions, or MeV O+ ions. Post-implant annealing at temperatures in the range 500–600 °C is needed to maximize the resistivity of the implanted material, but this causes redistribution of both F and H (but not O) and accumulation of hydrogen at strained or ion-damaged interfaces. The amount of hydrogen motion is sufficient to cause concerns about dopant passivation occurring in the initially masked, active regions of the devices. The resistance of the ion-implanted regions is stable for periods of ≥50 days at 200 °C, and is controlled by deep level point defects which pin the Fermi level near mid gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355096
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  • 2
    Electronic Resource
    Electronic Resource
    Ion implantation and dry etching characteristics of InGaAsP (λ=1.3 μm) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1610-1615 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical activation characteristics of Si+ and Be+ ions implanted into InGaAsP (λ=1.3 μm) grown lattice matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5×1012–5×1014 cm−2), annealing time (3–60 s) and annealing temperature (575–750 °C). Maximum doping concentrations of ∼2×1019 cm−3 were obtained for both Si+ and Be+, with activation energies for electrical activation of 0.58 and 0.39 eV, respectively. Multiple energy F+ or H+ implants can be used to produce high resistance layers for isolation purposes—maximum sheet resistances of ∼8×106 Ω/(D'Alembertian) or ∼106 Ω/(D'Alembertian) for initially p+ or n+ InGaAsP, respectively, were obtained for F+ implants followed by annealing near 450 °C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH4/H2/Ar discharges at low dc biases. The etch rates are the same for both n+ and p+ quaternary layers and are independent of the doping level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354809
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of InGaP by metalorganic molecular beam epitaxy using novel Ga sources (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2283-2287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of tri-isobutylgallium (TIBG) and tri-isopropylgallium (TIPG) for growth of InGaP on GaAs by metalorganic molecular beam epitaxy. In particular, we have explored the effect of growth temperature on carbon background and lattice constant. The incorporation rate of carbon was found to decrease with increasing temperature while that for Ga was found to increase. Both trends suggest enhanced alkyl-Ga decomposition with increased temperature similar to that observed for growth with triethylgallium (TEG). The variation in composition with growth temperature was, however, reduced for TIBG and TIPG relative to previous reports using TEG. Measured lattice constant varied linearly with TMI flow up to a value of ∼5.675 A(ring). The band gap was found to vary discontinuously with lattice constant suggesting enhanced ordering in Ga-rich layers. Finally, Sn doping from tetraethyltin was shown to vary linearly with TESn flux provided the combination of low V/III ratios and Ga-rich compositions was avoided.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353133
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 993-1000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process kinetics, chemical composition, morphology, microstructures, and stress of rapid-thermal low pressure metalorganic chemical vapor deposited (RT-LPMOCVD) TiNx films on InP, using a combined reactive chemistry of ammonia (NH3) gas and tetrakis (dimethylamido) titanium (DMATi) liquid precursors, were studied. Enhanced deposition rates of 1–3 nm s−1 at total chamber pressures in the range of 3–10 Torr and temperatures of 300 °C–350 °C at a NH3:DMATi flow rate ratio of 1:8 to 1:15 were achieved. Stoichiometric film compositions were obtained, with carbon and oxygen impurity concentrations as low as 5%. Transmission electron microscopy analysis identified the deposited films as TiN with some epitaxial relationship to the underlying (001) InP substrate. This process provides a superior film to the preview RT-LPMOCVD TiNx film deposited using only the DMATi precursor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351271
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  • 5
    Electronic Resource
    Electronic Resource
    Properties of titanium nitride thin films deposited by rapid-thermal-low-pressure-metalorganic-chemical-vapor-deposition technique using tetrakis (dimethylamido) titanium precursor (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3666-3677 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium nitride (TiNx) thin films were deposited onto InP by means of the rapid-thermal-low-pressure-chemical-vapor-deposition (RT-LPMOCVD) technique, using the tetrakis (dimethylamido) titanium (Ti(NMe2)4 or DMATi) complex as the precursor. Depositions were successfully carried out at temperatures below 550 °C, pressure range of 5–20 Torr and duration of 50 to 90 s, to give layer thicknesses up to 200 nm and growth rates in the range of 0.8 to 4.5 nm/s. These films had a stoichiometric structure and contained nitrogen and titanium in a ratio close to unity, but also contained a significant amount of carbon and oxygen. The elements were spread uniformly through the films, the nitrogen was Ti bounded, and the carbon was partially titanium bonded and organic bonded as well. The film resistivity was in the range of 400–800 μΩ cm−2; the stress was always compressive, in the range of − 0.5 × 109 to − 2 × 1010 dyne cm−2, and the film had a good morphology. These layers performed as an ohmic contact while deposited onto p-In0.53Ga0.47As material, (Zn-doped 1.2 × 1018 cm−3), provided an excellent step coverage for high aspect ratio via holes and were deposited selectively onto the InP and based materials when using SiO2 mask. This represents the first report of TiNx films deposited in a commercial RT-LPMOCVD reactor using the DMATi precursor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349214
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  • 6
    Electronic Resource
    Electronic Resource
    Measurement of electron densities in electron cyclotron resonance plasmas for etching of III-V semiconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4206-4210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The average electron densities in CH4/H2/Ar and CCl2F2/O2 electron cyclotron resonance discharges typical of those used for etching InP, GaAs, and related materials have been measured approximately 4 cm downstream from the multipolar microwave source as a function of microwave power (50–300 W), additional radio-frequency power (10–50 W), pressure (1–20 mTorr), flow rate (30–90 standard cubic centimeters per minute) and gas composition. At 1 mTorr pressure and 10 W rf, the electron densities (and semiconductor etch rates) increase rapidly with microwave power, from 1.3×1011 cm−3 for 5CH4/17H2/8Ar and 6×1010 cm−3 for 28CCl2F2/2O2 discharges at 50-W microwave power, to 9×1011 cm−3 and 3×1011 cm−3, respectively at 300-W microwave power. At the highest microwave power levels (≥200 W) the InP and GaAs etched surface morphologies are rough due to preferential removal of one of the lattice constituents from each material. The electron densities in both types of discharge show moderate increases with increasing rf power level, pressure or higher Ar or O concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348390
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  • 7
    Electronic Resource
    Electronic Resource
    Rapid thermal processing of WSix contacts to InP in low-pressure N2:H2 and tertiarybutylphosphine ambients (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7664-7673 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: WSix thin films deposited on InP substrates have been investigated for possible use as refractory ohmic contact materials for self-aligned laser devices. The films have been rf diode sputtered using various Ar gas pressures from a single commercial target composed of W and Si with an atomic ratio of 1:1. Following the deposition, the WSix/InP samples were rapid thermal processed using a rapid thermal metalorganic chemical vapor deposition system in a controlled low-pressure ambient of N2:H2 (9:1) and tertiarybutylphosphine. The as-deposited films (∼100 nm thick) were amorphous but crystallized in the temperature range of 600–650 °C. The WSi2 phase forms first at 600 °C and then the W5Si3 nucleate with further heating at 650 °C. As a result of the crystallization, a reduction in the specific contact resistance to a value of 7.5×10−6 Ω cm2 and a decrease in the sheet resistance to values lower than 2 Ω/(D'Alembertian) were observed. In addition, a significant reduction in the internal stress and an improvement in the WSix-to-InP adhesion were found, demonstrating the potential of WSix as a contact material for InP-based self-aligned devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347539
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures grown by molecular-beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4029-4034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper compares Hall-effect measurements combined with rapid thermal annealing (RTA) and low-temperature photoluminescence (4-K PL) as characterization techniques for the optimization of the growth of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures. The Hall-effect measurements with the RTA were used to determine the optimized growth temperature. 4-K PL was used to determine the quality of the InGaAs quantum well and the In mole fraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346239
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of Pnp heterojunction bipolar transistor structures by metalorganic molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1219-1223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fabrication of high-quality Pnp heterojunction bipolar transistors has traditionally been difficult due to the inability to achieve and confine high p- and n-type doping levels using common dopants such as Be and Si. In this paper we discuss how carbon and tin can be incorporated during growth by metalorganic molecular beam epitaxy in order to produce Pnp structures. In particular it has been found that carbon introduced from trimethylgallium can be used to produce abrupt, thermally stable profiles in AlGaAs and that incorporation at concentrations up to mid-1019 cm−3 does not adversely affect the optical or structural quality of the material. In addition, we have found that the use of tetraethyltin (TESn) for tin doping of the GaAs base layer allows for higher doping and better confinement of the dopant than can be obtained with elemental Sn. Consequently, large-area (90-μm diameter) Pnp transistors fabricated from material grown with TESn show higher gain than those grown with elemental tin, in spite of the higher base dopant concentration. The gain obtained with TESn, 45, is the highest yet reported for an abrupt-junction, uniformly-doped Pnp structure. Furthermore, because of the low parasitic resistances which result from the use of carbon and tin doping, the I–V characteristics obtained in this study show superior performance relative to previously published reports.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351291
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  • 10
    Electronic Resource
    Electronic Resource
    Single-energy, MeV implant isolation of multilayer III-V device structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1010-1013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-energy, implant isolation scheme for thick (≥1.5 μm) III-V semiconductor device structures such as heterojunction bipolar transistors (HBTs) is described. A 5-MeV O+ implant at doses around 1015 cm−2 produces an almost uniform damage profile over ∼2 μm, sufficient to isolate structures containing highly doped (p=7×1019 cm−3) individual layers. The heavily damaged region associated with the end of the O+ ions range is placed in the underlying semi-insulating substrate. Resistivities above 108 Ω/(D'Alembertian) are obtained in GaAs/AlGaAs HBTs with such an implant, following annealing at ∼550 °C. High-quality, 2×5 μm2 HBTs with gains of 25 for base doping of 7×1019 cm−3 have been fabricated using this isolation scheme. A considerable simplification is achieved over the use of conventional keV implants, where up to ten separate ion energies are required to isolate an HBT structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350436
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