ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoconductivity, photo-Hall free carrier concentrations and mobilities were measured on molecular beam epitaxy-grown silicon planar-doped GaAs samples, with silicon concentrations between 1.4×1012 and 8.8×1013 cm−2, as functions of temperature. In all samples, the planar-doped region is placed 0.2 μm below a n+-doped cap layer at the surface. We perform a systematic investigation of the persistent as well as nonpersistent photoconductivity effects which are present in all samples. A phenomenological analysis shows the presence of two distinct conduction channels, one with n characteristics and the other with p characteristics. These channels can present either bulk or two-dimensional characteristics, depending on the light intensity and on the temperature. A model based on spatial separation between electrons and holes is proposed to account for the persistence of the photoconductivity effect. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360127
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