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  • 1
    Digitale Medien
    Digitale Medien
    Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2896-2903 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Amorphous SiNx:H films having nitrogen content x greater than 1.3 were deposited at 300 °C by varying the ammonia-to-monosilane flow-rate ratio RN, using plasma-enhanced chemical- vapor-deposition. The characteristics of defects in the films subjected to UV illumination and anneal treatments were investigated by electron-spin-resonance (ESR) measurements. The paramagnetic Si dangling bonds (DBs) with three N atom neighbors, called the K0 center, were observed for an as-deposited film with RN of 5, and the density was favorably enhanced by exposing the film to UV light or by the UV illumination subsequent to its annealing. The K0 density decreased as the film was annealed at 550 °C after the UV illumination. The mechanisms of creation and disappearance of the K0 centers by the illumination and the annealing, respectively, were interpreted in terms of the potential fluctuation model. The K0 density in as-deposited films decreased with RN, and a new three-line spectrum was observed as RN exceeds 7. Origins of this new spectrum are discussed. The ESR spectra due to N DBs were observed for only the films subjected to the anneal/illumination sequence, and the densities of both N DBs and K0 centers decreased with increasing the annealing time before the illumination. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363142
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  • 2
    Digitale Medien
    Digitale Medien
    Low resistivity quasi-epitaxial Mo-Ta alloy and high-quality anodic oxide for a-Si thin-film transistor liquid-crystal display (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2052-2055 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Sputtered Mo-Ta alloy and its anodic oxide have been studied in a Mo composition range from 0 to 30 at. %. Resistivity abruptly changed as Mo composition increased above 10 at. % from 185 μΩ cm to about 35 μΩ cm. The crystal structure transformed from tetragonal to cubic at this Mo composition. For higher Ta compositions, the crystal structure varied according to the under-layer polycrystalline film crystal structure, which may be denoted as quasi-epitaxial deposition, and the resistivity decreased to as low as 22 μΩ cm. Anodic oxide films of Mo-Ta alloy were superior to conventional Ta anodic oxide films in regard to resistivity and breakdown field, and the best insulator was obtained at Ta 95 at. %. This quasi-epitaxial Mo-Ta alloy and anodic oxide were applied for thin-film transistor matrix substrates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.344312
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  • 3
    Digitale Medien
    Digitale Medien
    Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5285-5289 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electrical properties of Se- and Zn-doped Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by atmospheric pressure metalorganic chemical vapor deposition under a wide range of growth conditions were investigated using van der Pauw–Hall measurements at room temperature. The dopants were hydrogen selenide and dimethylzinc. The samples were prepared so that parasitic conduction in the GaAs substrate just adjacent to the ternary or quaternary layers could be eliminated from the Hall measurement. The carrier concentration of GaInP and AlGaInP increased as the 0.8±0.1th power of the feed amount of dopants for both conductivity types. At a growth temperature around 680 °C, the hole concentration tended to saturate near the 1018 cm−3 level as the amount of dimethylzinc being fed increased. The carrier concentration decreased with increasing growth temperature, with apparent activation energies of 0.95 eV for Se doping and 1.9 eV for Zn doping. The group-V to group-III feed ratio had a weak influence on the carrier concentration. On the other hand, the Hall mobility of the layers grown under the various growth conditions remained almost constant: the electron mobilities of Se-Ga0.5In0.5P and Se-(Al0.5Ga0.5)0.5In0.5P within the carrier concentration range of 1017 〈n〈1018 cm−3 were 950–700 and ∼100 cm2/V s, respectively. The hole mobilities of Zn-Ga0.5In0.5P and Zn-(Al0.5Ga0.5)0.5In0.5P within the carrier concentration range of 1017 〈p〈1018 cm−3 were ∼34 and ∼16 cm2/V s, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343718
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  • 4
    Digitale Medien
    Digitale Medien
    Thermal strain-induced degradation mechanism in the visible AlGaAs/GaAs laser (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2448-2452 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We fabricated and life-tested visible AlGaAs/GaAs channeled-substrate-planar-type lasers and found that some are degraded within 100 h of operation. We investigated these using photoluminescence and transmission electron microscopic images. The characteristic features in photoluminescence images are dark defects that run parallel to the channeled stripe. Using transmission electron microscopy, we found that these dark defects are composed of precipitates, dislocation loops, and dislocation dipoles. In order to know the relation between these degradation phenomena and the thermal strain induced by lattice mismatch, we calculated the stress distribution in the semiconductor laser using the finite element method. According to this simulation, a stress concentration in the active layer arises near the edges of the channeled stripe where the volume dilatation is maximal. Combining the results of experiments and simulation, we concluded that interstitial atoms created by nonradiative recombination migrate to the edges of the stripe, and that ultimately dark defects appear near the edges of the stripe.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.335919
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  • 5
    Digitale Medien
    Digitale Medien
    Anisotropic Nd–Fe–B thin-film magnets for milli-size motor : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6627-6629 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Efforts were made to obtain anisotropic thin-film magnets at low substrate temperature. This is an important criterion for practical applications such as to build motors. The influence of substrate materials as well as film thickness on the c-axis orientation were studied. It has been shown that thin-film magnets with the easy axis of magnetization normal to the film plane could be deposited at a substrate temperature of around 450 °C by choosing the composition near the line from Nd13Fe76B11 to Nd13Fe70B17 in the ternary phase diagram. It was found that the anisotropic film magnets could be also deposited on the metallic substrate. The c-axis orientation tended to be isotropic with an increase in film thickness. The obtained results were used to fabricate a milli-size motor by depositing 20-μm-thick Nd–Fe–B films on a silicon steel disk substrate of 5-mm diam. The milli-size motor exhibited a torque of 0.8 g mm at a rotational speed of 3000 rpm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349879
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  • 6
    Digitale Medien
    Digitale Medien
    Transmission electron microscopic study of the ordered structure in GaInP/GaAs epitaxially grown by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2164-2166 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaInP epitaxial crystals grown on (001) GaAs at 660–700 °C by metalorganic chemical vapor deposition are examined by transmission electron microscopy. The computer-processed image of the high-resolution electron micrograph clearly reveals a lamellate-ordered domain structure of two variants of {111} superlattices, which is also investigated using cross-section and plan-view dark field electron micrographs. The spikes of well-defined superspots in the diffraction pattern were found to originate from the shape of the domains. The investigation of GaInP grown with different Zn concentrations showed that the disordering occurs as a result of a decrease in the density rather than the size of the domain.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100287
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  • 7
    Digitale Medien
    Digitale Medien
    Effects of H, OH, and CH3 radicals on diamond film formation in parallel-plate radio frequency plasma reactor (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4055-4061 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Diamond films were successfully synthesized in both parallel-plate radio frequency (rf: 13.56 MHz) CH4 and CH3OH plasmas with injection of H and OH radicals generated in the remote microwave (2.45 GHz) H2/H2O plasma. Effects of H, OH, and CH3 radicals on the diamond film formation in the rf plasma reactor were investigated by the formation of diamond films employing radical injection technique and the measurement of density in the plasma. Under the condition of diamond film formation, CH3 density was measured by infrared diode laser absorption spectroscopy (IRLAS). The kinetics of CH3 in rf CH4 and CH3OH plasmas with injection of H and OH radicals were evaluated from the results of optical emission spectroscopy and lifetime of CH3 radicals estimated by IRLAS. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.365715
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  • 8
    Digitale Medien
    Digitale Medien
    Characterization of interfacial atomic steps in GaAs/AlAs superlattices by transmission electron microscopy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 379-381 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied interfacial atomic steps in GaAs/AlAs superlattices using high-resolution transmission electron microscopy (HRTEM) and lattice image simulation. We find arrays of bright spots at the interface in the TEM image to be good indicators of the interface configuration. Doubling of the bright spot arrays and step-shaped arrays in TEM lattice images indicate a "type 1'' monolayer step whose front is perpendicular to the direction of the electron beam and a "type 2'' monolayer step whose front is parallel to the direction of the electron beam. Our HRTEM observations indicate that the atomic steps at GaAs and AlAs interfaces grown at 700 °C are denser than at interfaces grown at 500 °C.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99899
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  • 9
    Digitale Medien
    Digitale Medien
    680-nm band GaInP/AlGaInP tapered stripe laser (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1572-1573 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A gain-guiding tapered stripe laser was fabricated using a Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 °C, an aspect ratio of about 2, and an astigmatism near 25 μm. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 °C with a constant output power of 3 mW.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98610
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  • 10
    Digitale Medien
    Digitale Medien
    Characterization of threading dislocations in GaN epitaxial layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3421-3423 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated Si-doped GaN epitaxial layers on a (0001)-sapphire substrate using a HCl vapor-phase etching technique, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Three kinds of distinctive etch pits correspond to three different types of threading dislocations, edge, mixed, and screw types. Photoluminescence intensity increases with the decrease in the number of etch pits corresponding to mixed and screw dislocations. The number of etch pits corresponding to edge dislocations, however, did not change. We concluded, therefore, that threading dislocations having a screw-component burgers vector act as strong nonradiative centers in GaN epitaxial layers, whereas edge dislocations, which are the majority, do not act as nonradiative centers. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126666
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