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  • 11
    Electronic Resource
    Electronic Resource
    Photoemission studies of Ru3(CO)12 adsorption and formation of Cu–Ru bimetallics on Cu(111) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 6250-6255 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoemission spectra of Ru3(CO)12 adsorbed on Cu(111) and its decomposition products induced by electron irradiation and annealing are reported. It is found that electron bombardment and subsequent annealing of Ru3(CO)12/Cu(111) lead to the formation of Cu–Ru bimetallic aggregates which exhibit similar features as those reported previously on polycrystalline Cu, that is that Ru–Cu aggregates are formed of which Ru atoms are at the core and the surface is wetted with Cu and there exist distinct interface states. The mechanism for the formation of the bimetallic Cu–Ru aggregates on Cu(111) is almost certainly one in which two-dimensional Ru aggregation occurs on the surface upon initial annealing (∼225 °C) followed by three-dimensional aggregation and wetting of the Ru cluster surface by Cu after further annealing at higher temperatures ((approximately-greater-than)450 °C). The interaction between Ru surface intermediates and Cu(111) before Cu wetting occurs is also examined with photoemission and SW–Xα calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460414
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  • 12
    Electronic Resource
    Electronic Resource
    Internal explosion in laser ablation of superconducting targets (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4227-4231 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature profile inside a superconducting target in laser ablation is calculated for laser pulses of various shapes. The calculation is based on the equation of heat conduction. All parameters characterizing the target material are assumed to be temperature dependent and are determined empirically by extrapolating experimental data to the melting point. The receding velocity of the vapor-solid interface is determined by the dynamical balance of energy. Our calculation shows that, in general, there exist subsurface overheating spots at different instants as long as the laser pulse intensity is strong enough. The dependence of their occurrence on the pulse shape is analyzed, and conditions to avoid them without jeopardizing the deposition process are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352234
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  • 13
    Electronic Resource
    Electronic Resource
    II-VI compound thin-film deposition by resonant laser sputtering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3098-3104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved laser-induced fluorescence measurements indicate that Zn atoms excited to the 4 3PJ metastable state react rapidly with group-VI molecules O2, CS2, and H2S. Rate constants for these processes are presented. Based on these data, a method for deposition of thin films of the ZnO or ZnS products of these reactions is demonstrated, wherein the Zn atoms are both sputtered from a target and excited to the 4 3PJ state by near-resonant radiation from a pulsed XeCl laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356161
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  • 14
    Electronic Resource
    Electronic Resource
    Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8215-8217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent single-phase rubidium titanyl phosphate (RTP) films having excellent crystalline properties have been deposited by excimer laser ablation method on (001)- and (010)-oriented potassium titanyl phosphate (KTP) substrates, respectively. X-ray θ-2θ scans and pole figures showed that the laser-ablated RTP films grew epitaxially on, and had exactly the same orientations of, the underlying KTP substrates. X-ray photoelectron spectroscopy analysis revealed that the RTP films prepared with this method are nearly stoichiometric. It appears to be possible to use these films as waveguides having sharp waveguide/substrate interfaces. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357884
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  • 15
    Electronic Resource
    Electronic Resource
    Imazaquin, ein aussichtsreiches Herbizid für die Bekämpfung von Seiden–Arten (Cuscuta spp.) in Sojabohnen (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Weed research 31 (1991), S. 0 
    Details
    ISSN: 1365-3180
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: L'imazaquine, un herbicide systémique, appliqué sur les feuilles de Phaseolus aureus parasité par Cuscuta lupuliformis est transporté dans la cuscute et fortement accumulé dans la partie apicale des tiges de ce parasite. Des résultats similaires sont obtenus avec le couple soja—Cuscuta australis. L'herbicide est rapidement dégradé dans le soja, mais actif sur la cuscute dont il inhibe la division cellulaire. La systémie phloémienne de l'imazaquine, sa sélectivité physiologique vis à vis du soja ainsi que son efficacité sur la cuscute font que cet herbicide est un produit prometteur pour la lutte curative contre la cuscute dans le soja, comme le montrent les essais préliminaires réalisés en serre.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3180.1991.tb01740.x
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  • 16
    Electronic Resource
    Electronic Resource
    Studies on diamondlike carbon films for antireflection coatings of infrared optical materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 705-707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike carbon (DLC) films were directly deposited onto germanium (Ge) and zinc sulphide (ZnS) slices by a capacitively coupled 13.56 MHz rf glow discharge plasma with Ar-C2H2 gas mixtures. The IR transmittance was measured using a Fourier-transform infrared spectrometer. The maximum values of the IR transmission of Ge and ZnS with DLC films on both sides are 99% and 95.8%, respectively, which come up to the theoretical values. A nonuniform DLC film, of which the refractive index gradually changes along the thickness, has been successfully deposited onto a Ge slice for the first time and the IR transmission of a nonuniform DLC film coated onto both sides of a Ge substrate at the wider wave band of 2.5–15 μm is over 85%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357813
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  • 17
    Electronic Resource
    Electronic Resource
    Resistive transition of Bi(2223) silver clamped thick film (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5108-5111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of voltage-current (V-I) curves and magnetoresistance (R-H) for Bi(2223) thick film were carried out for various temperatures and magnetic fields. The results indicate that a flux lattice melting transition takes place as the temperature and the field are raised. This transition boundary in the (H,T) phase diagram was found to follow the irreversibility line described by the function of H=H0(1−T/Tc)3/2. Above this line, the V-I curves display a flux-flow-like character. Temperature and magnetic field dependencies of flow resistance Rf-T and Rf-H show a varied viscosity in different temperature and field ranges. Below this line, V-I curves in the low voltage region present a thermally activated flux creep property. The R-H measurements indicate that the fields at the onset and the midpoint of the magnetoresistive transition also follow a (1−T/Tc)3/2 dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354297
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  • 18
    Electronic Resource
    Electronic Resource
    Scaling behavior of virgin magnetization curve of DyBa2Cu3Oy crystal prepared by melt-textured growth method (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1329-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization curves of a DyBa2Cu3Oy crystal prepared by the melt-textured growth method were measured from 10 to 85 K with the magnetic field parallel to the c axis. The scaling behavior of the virgin magnetization curves is observed and explained in terms of an extended Bean model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357796
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  • 19
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of V-Sr-Tl-O system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1057-1059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the structure of V-Sr-Tl-O system with transmission electron microscopy. The majority phase in VSrTl0.2Oy samples with a sharp resistivity drop around 165 K is identified as V2Sr0.6TlδOy with δ ranging from 0.01 to 0.04. This phase has a hexagonal structure, with point group 6/mmm, space group P6/mmm, and lattice parameters a=0.569 nm and c=1.284 nm. Upon in situ cooling from room temperature to 130 K, no evidence of structure change is observed. When the crystals of V2Sr0.6TlδOy are heated in situ, two superstructures are formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349695
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  • 20
    Electronic Resource
    Electronic Resource
    Tunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6299-6303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threshold voltage (VT) degradation metal-oxide-semiconductor field-effect transistors (MOSFETs) with thermally nitrided oxide or pure oxide as gate dielectric was determined under Fowler–Nordheim (FN) stressing. A typical VT turnaround behavior was observed for both kinds of devices. The VT for nitrided oxide MOSFETs shifts more negatively than that for pure oxide MOSFETs during the initial period of FN stressing whereas the opposite is true for the positive shift after the critical time at turnaround point. The discovery that the shift of substrate current peak exhibits similar turnaround behavior reinforces the above results. In the meantime, the field-effect electron mobility and the maximum transconductance in the channel for nitrided oxide MOSFETs are only slightly degraded by stressing as compared to that for pure oxide MOSFETs. The VT turnaround behavior can be explained as follows: Net trapped charges in the oxide are initially positive (due to hole traps in the oxide) and result in the negative shift of VT. With increasing injection time, trapped electrons in the oxide as well as acceptortype interface states increase. This results in the positive shift in VT. It is revealed that VT degradation in MOSFETs is dominated by the generation of acceptortype interface states rather than electron trapping in the oxide after the critical time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346872
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