Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • Artikel: DFG Deutsche Nationallizenzen  (26)
Datenquelle
  • Artikel: DFG Deutsche Nationallizenzen  (26)
Materialart
Erscheinungszeitraum
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Photoluminescence of defects induced in silicon by SF6/O2 reactive-ion etching (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3348-3352 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence (PL) studies of SF6/O2 plasma-induced defect formation in n-type silicon samples are reported. Ion bombardment of the silicon surface during the SF6 reactive-ion etching (RIE) is shown to introduce defects giving rise to a broad PL band in the 0.70–1.00 eV spectral range and to the carbon-related C and G lines. The role of oxygen during SF6/O2 RIE on the photoluminescence observed is analyzed. It is argued that oxygen contamination enhances the formation of PL centers via the creation of extended defects, such as oxygen precipitates. A lattice contraction nearby these extended defects is suggested to be responsible for the observed splitting of the C and G lines as well as the shift of the phosphorous bound exciton line detected after SF6/O2 RIE. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360711
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Electrical studies on plasma and reactive-ion-etched silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5388-5393 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of reactive-ion etching (RIE) and plasma etching (PE) using deuterium on the electrical properties of boron-doped p-type silicon has been studied employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy (DLTS) measurements on the treated samples revealed the presence of a number of previously unreported near-surface traps. These comprise hole traps H(0.44) and H(0.54) at 0.44 and 0.54 eV above the valence band, respectively, and an electron trap E(0.46) at 0.46 eV below the conduction band. The H(0.44) observed directly after the RIE treatment increases in concentration as the sample is annealed to 200 °C, whereas the E(0.46) and H(0.54) are detected in the PE samples directly after etching and annealing at 100 °C, respectively. The depth profiles of the observed traps have been determined, and their annealing behavior is studied up to 200 °C. E(0.46) and H(0.54) are tentatively associated with strain-induced defects resulting from hydrogen platelet formation, whereas H(0.44) is attributed to a vacancy-related defect complex. Other broader DLTS signals following annealing ≥200 °C are explained in terms of additional trap levels closely positioned in the band gap and/or extended defect clusters. Also, the capacitance-voltage (C-V) data on the diodes were modeled to extract the boron deactivation depth profile of the samples after plasma exposures and upon annealing at 200 °C. For both RIE and PE, annealing at 200 °C for 60 min caused the shallow boron acceptor concentration in the samples to almost recover to its preetched value.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343683
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    A photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2951-2956 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoemission was used to probe the surface modifications which occur while etching TiSi2 in CF4 plasmas. Fluorination of the silicide leads to the depletion of Si from the surface region and the formation of a relatively thick (∼15–20 A(ring)) overlayer with an average stoichiometry of TiF3. An identical overlayer also forms on pure Ti. The overlayer is primarily composed of a single fluorinated species and apparently does not contain a distribution of different species as in the case of fluorinated Si. This observation strongly suggests that the limiting factor in the etching of these materials is the further reaction/sputtering of this stable, nonvolatile fluoride. Also, as in the case of Si etching in halocarbon plasmas, CFx films were found to form with increasing addition of H2. Significant differences in the quantity and composition of the films were found compared to those formed on Si substrates, with Si exhibiting a higher tendency to promote CFx film growth.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342742
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Plasma chemical aspects of magnetron ion etching with CF4/O2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2518-2522 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Magnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4 and CF4/O2 with respect to the plasma chemistry and the interaction of the plasma with both the etched substrate and the chamber walls. The higher dissociation and ionization rates lead to significant changes in the species present in the plasma as compared to a conventional reactive ion etching (RIE) plasma. The F atom concentration in a CF4 magnetron plasma is much higher than in a RIE plasma. The addition of O2 leads to only a small further enhancement and produces a decrease in the Si etch rate. The highly dissociated species in the magnetron plasma produce less C-F polymer, both on the wafer and on the chamber walls, relative to RIE. Sputtering of Al from the electrode produces a substantial deposit of AlFx on the chamber walls, but not on the wafer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339463
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    A study of CClF3/H2 reactive ion etching damage and contamination effects in silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2958-2967 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A comprehensive characterization of the damage and contamination produced in silicon by CC1F3/H2 reactive ion etching is presented. This highly selective SiO2-to-Si reactive ion etching process unfortunately produces all three of the deleterious damage-contamination layers that can result from dry etching exposure; viz., CC1F3/H2 reactive ion etching produces a residue layer on the Si surface, a permeated layer at the Si near-surface, and a layer of damaged Si. Various post-RIE-exposure, surface-recovery approaches are evaluated in this report. The results indicate that in order to restore the surface to a device-quality state, it is not sufficient to simply eliminate surface contamination. Damage incurred in the silicon bonding must be restored or removed. The latter can be accomplished by suitable treatments such as wet chemical silicon etch or silicide formation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336934
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1587-1595 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Tantalum pentoxide thin films (60–80 nm thick) on silicon were prepared by thermal oxidation at 430–675 °C of electron-beam evaporated Ta. The tantalum layers had been deposited by electron-beam evaporation onto the Si substrates held at room temperature (RT) or heated to 150 °C during Ta evaporation. The dc conduction properties and the dielectic strength of the Ta2O5 films were studied employing Al/Ta2O5/Si capacitors. The smallest conductivity was found for Ta2O5 films formed from Ta deposited onto Si held at RT during evaporation and oxidized at 490 °C for 1 h in dry O2. This minimum conductivity corresponds to a leakage current of 1×10−7 A/cm2 at an applied field of 1 MV/cm (Al negative on p-type Si substrates). The dc conduction characteristics can be interpreted by assuming Poole–Frenkel conduction. For Ta2O5 formed from Ta which had been deposited onto Si substrates held at 150 °C during evaporation, the conductivity is smallest for a film which had been oxidized at 430 °C for 1 h (lowest oxidation temperature investigated). Ta2O5 films formed from Ta deposited onto Si substrates at RT exhibit lower conductivity than Ta2O5 films formed from Ta deposited onto heated (150 °C) Si substrates for a given oxidation temperature. The presence of water in the oxidizing ambient was found to greatly deteriorate the leakage characteristics of the Ta2O5 films. The dielectric strength of the Ta2O5 film for which the lowest conductivity was observed (oxidized at 490 °C) ranged from 2 to 4.5 MV/cm. A maximum in the breakdown distribution was found for a breakdown strength of 3–3.5 MV/cm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336468
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Effects of deuterium plasmas on silicon near-surface properties (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3297-3300 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342666
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    A photoluminescence study of CF4 reactive-ion-etched silicon: Various process conditions and magnetically enhanced etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6349-6352 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The impact of reactive-ion-etching (RIE) on the near-surface crystal quality of Czochralski silicon has been studied by photoluminescence spectroscopy. The presence of carbon-related defects is investigated as a function of the pressure during CF4 RIE. The effects of adding hydrogen to the plasma as well as the time of treatment are studied and discussed in terms of defect formation and etch rate. Photoluminescence spectra of samples recorded after a magnetically enhanced reactive-ion-etching process are also presented. The introduction of defects depending on the self-bias voltage and the etch rate are investigated for different magnetic fields.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355158
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    Photoluminescence characterization of plasma exposed silicon surfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5597-5603 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The variation of photoluminescence (PL) spectra obtained with silicon exposed to various plasmas as a function of plasma etch treatment conditions is reported. Phosphorus- or boron-doped covering a large range of doping concentrations, Czochralski or float-zone-grown silicon crystals were investigated. The effect of various etching gases on the luminescence spectra as well as the effects of subsequent annealings are reported. Two types of recombination process are observed: (i) The first gives rise of sharp luminescence lines, such as the W (1018 meV), X (1040 meV), T (935 meV), I (965 meV), G (967 meV), C (790 meV), and P (767 meV) lines, which are known to originate from defects produced by high-energy irradiation and then manifest damage of the crystalline material. Other sharp PL lines at 1015, 1008, and 997 meV were introduced upon annealing at 400 °C. (ii) The second recombination process induces broad lines or bands in the photoluminescence spectra. The formation and nature of the defects giving rise to both recombination processes are discussed in terms of the plasma conditions and starting material.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350172
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    Nonintrusive wafer temperature measurement using in situ ellipsometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3390-3392 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO2. The values of these parameters have been redetermined in this work.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348517
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...