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  • 1990-1994  (14)
  • 1
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy of irradiated p-type InP grown by metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1435-1439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented of a deep level transient spectroscopy study of radiation-induced defects in p-type (Zn-doped) InP grown by metalorganic chemical vapor deposition. Three major hole traps (H3, H4, and H5) and two electron traps (EA and EB) were observed. The electron trap structure in particular is significantly different from that reported in the literature for p-type InP grown by other methods. Activation energies of 0.22 eV (EA) and 0.76 eV (EB) have been measured, and capture cross sections (σ∞) of 4.4×10−15 cm2 (EA), and 1.4×10−12 cm−2 (EB) have been determined. The H5 center has a thermally activated capture cross section with an energy barrier of 0.35 eV. The measured injection annealing rate of the primary hole trap (H4) was different than previously observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347284
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Critical current enhancement in proton-irradiated Tl2CaBa2Cu2O8 films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1119-1121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured changes in the superconducting transition temperature Tc and critical current density Jc of epitaxial Tl2CaBa2Cu2O8 films upon exposure to 2 MeV protons. Jc was measured inductively at 4.2 and 77 K and in fields of H=0 and 0.2 T. At 77 K and H=0, Jc decreases monotonically with increasing fluence Φ. The rate of decrease is about 1.8 times greater than for YBa2Cu3O7 films, even though the rate of change of Tc with Φ is comparable. At 4.2 K, Jc is initially enhanced, even at H=0. The maximum observed increase is 34% (to 8 MA/cm2) at Φ≈1016 protons/cm2 and H=0.2 T. This enhancement is attributed to pinning of magnetic flux lines by proton-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347384
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Radiation-induced reverse dark currents in In0.53Ga0.47As photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7244-7249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse dark current-voltage (dark I-V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354012
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Time dependence of radiation-induced generation currents in irradiated InGaAs photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1629-1635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduction of the E2 peak height with time, as measured by deep level transient spectroscopy. The reverse current is found to decay with a logarithmic time dependence, which can be explained by a model in which the annealing of the E2 defects is controlled by a distribution of thermal energy barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354812
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of carrier concentration on the properties of irradiation-induced defects in p-type indium phosphide grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4201-4207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to monitor the effect of carrier concentration on the properties of radiation-induced defects in InP n+p mesa diodes grown by metalorganic chemical vapor deposition. The activation energy Ea for hole emission from H4 and H5 centers and the injection-enhanced annealing rate of H4 at 200 K have been measured as a function of carrier concentration NA over the range ∼1×1016– 4×1017 cm−3. The measured values of Ea decrease with increasing NA in a way that can be semi-quantitatively explained by a combination of the Frenkel–Poole effect and phonon-assisted tunneling produced by the electric field in the junction. The results suggest that hole emission from H4 and H5 centers takes place to maxima in different valence bands. The injection-enhanced annealing rate of H4 centers increases with increasing NA at low concentrations, but approaches a maximum value near NA ∼ 1017 cm−3, indicating a limiting dopant (Zn) concentration for impurity-enhanced defect annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351386
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  • 6
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy study of proton irradiated p-type InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6488-6494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep level transient spectroscopy study of proton irradiation induced defects in n+p InP mesa diodes grown by metalorganic chemical vapor deposition is reported. In contrast to results reported for InP grown by other methods, 3 MeV proton irradiation produced a DLTS spectrum similar to 1 MeV electron irradiation with the addition of two new peaks. Six majority carrier peaks: HP1(Ea=0.15 eV), H2(Ea=0.20 eV), H3(Ea=0.30 eV), H4(Ea=0.37 eV), H5(Ea=0.54 eV), and H7(Ea=0.61 eV) and three minority carrier peaks: EA(Ea=0.26 eV), EB(Ea=0.74 eV), and EC(Ea=0.16 eV) were detected. The H5 peak displayed a thermally activated capture cross section and a dependence of peak height on injection level. Isothermal annealing at 375 K was performed and thermal annealing rates are presented. Low temperature (200 K), minority carrier injection annealing rates are also presented. For most of the defects, a significant residual concentration remained after injection which could not be annealed further. An equation was developed for the annealing rate of the major defect, H4, as a function of injection level, carrier concentration, and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348856
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    A sensitive resistivity probe of high temperature phase transformations (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 410-414 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus for making in situ measurements of changes in the electrical resistivity accompanying phase transformations in metallic alloys is presented. Measurements can be made in vacuum or inert gas at annealing temperatures as high as 1500 K. The long-term thermal stability is better than ±0.3 K. The measurement circuit is stable to better than 0.01% over any time scale. This apparatus provides a relatively simple and inexpensive means for obtaining high temperature resistivity measurements on very brittle samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142135
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  • 8
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence of undoped InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4249-4251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5×1015 cm−3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 μs, and surface recombination velocities were fund to be on the order of 103 cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient ≥5.9×10−11 cm3/s at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355962
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  • 9
    Electronic Resource
    Electronic Resource
    Proton radiation effects in microwave cavities and ring resonators fabricated from YBa2Cu3O7−δ (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1563-1565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first radiation effects study on a superconducting ring resonator made from thin-film YBa2Cu3O7−δ. Exposure to 2 MeV protons causes the superconducting transition temperature Tc to decrease predictably with fluence. For temperatures below about 0.9Tc , there is no significant change in the transmission coefficient, the center frequency, or the quality factor Q of the resonator, even for doses in excess of 4×1016 protons/cm2 (∼0.04 displacements per film atom). Similarly, the low-temperature surface resistance Rs of an unpatterned film does not change with irradiation. We show that this insensitivity to radiation is not predicted by standard theory, and that the dominant part of Rs at low temperature is the residual resistance R0. Thus any viable theory describing the origin of R0 must, as a criterion, explain the origin of its insensitivity to large irradiation doses. This criterion is used to evaluate theories ascribing R0 to weak links, flux pinning, impurities, and lattice imperfections.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105178
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  • 10
    Electronic Resource
    Electronic Resource
    Order-of-magnitude method for estimating the fluence that optimizes the critical current in particle-irradiated cuprate superconductors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1237-1239 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The particle fluence that maximizes the critical current enhancement in cuprate superconductors is shown to be closely related to the nonionizing energy loss (displacement damage) of a given particle. In many cases, only the incident particle type and energy need to be known in order to allow an order-of-magnitude prediction of the optimal fluence for enhancing the critical current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107606
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