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  • 1
    Electronic Resource
    Electronic Resource
    Frequency dependence of the plasma density for helicon plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1463-1467 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations of plasma density are investigated as a function of frequency of rf power in a helicon plasma source. Abrupt, almost step-like changes in the plasma density are observed during the frequency scans under various conditions of the input rf power, the argon gas pressure, and the magnetic field. It is found that the transition frequencies shift to the lower value region as the input rf power and/or the argon gas pressure is increased, and to the higher value region as the magnetic field is increased. The observed density transitions are compared with semianalytical calculations based on the power balance relation and it has been shown that the results are in good agreement. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872325
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  • 2
    Electronic Resource
    Electronic Resource
    The effects of apigenin-7-O-β-d-glucuronopyranoside on reflux oesophagitis and gastritis in rats (2005)
    Oxford, UK : Blackwell Science Ltd
    Autonomic & autacoid pharmacology 25 (2005), S. 0 
    Details
    ISSN: 1474-8673
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Chemistry and Pharmacology , Medicine
    Notes: 1 This study evaluated the inhibitory action of apigenin-7-O-β-d-glucuronopyranoside (AGC), apigenin, and omeprazole on reflux oesophagitis and gastritis in rats. AGC was isolated from Clerodendron trichotomum leaves. 2 Oesophagitis and gastritis were induced by surgical procedure and the administration of indomethacin, respectively. The intraduodenal (i.d.) administration of AGC decreased the volume of gastric juice and increased the gastric pH compared with apigenin and omeprazole. The acid output was more inhibited by AGC in a dose-dependent manner than by apigenin and omeprazole. Compared with apigenin and omeprazole, AGC significantly decreased the size of gastric lesions, which were induced by exposure of the gastric mucosa to indomethacin. 3 Malondialdehyde (MDA) content, which is the end product of lipid peroxidation, was increased significantly after the induction of reflux oesophagitis. The MDA content was decreased by AGC (i.d. 3 mg kg−1), but not by either apigenin or omeprazole. This suggests that AGC has an antioxidative effect. In the oesophagitis group, the mucosal levels of glutathione (GSH) were significantly lower than that in the normal group. However, the GSH levels were preserved after administering the AGC, suggesting that AGC possesses scavenging activity. 4 In summary, AGC is more potent than apigenin and omeprazole at inhibiting reflux oesophagitis and gastritis and may therefore be a promising drug for their treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1474-8673.2005.00332.x
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  • 3
    Electronic Resource
    Electronic Resource
    An iatrogenic dermatosis with ulceration (2005)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 30 (2005), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.2005.01828.x
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  • 4
    Electronic Resource
    Electronic Resource
    GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 802-804 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaInAsSb/AlGaAsSb multiple-quantum-well diode laser structure consisting of Al0.6Ga0.4As0.05Sb0.95 cladding layers, Al0.3Ga0.7As0.02Sb0.98 confining layers, and four 15-nm-thick Ga0.87In0.13As0.12Sb0.88 quantum wells with 20-nm-thick Al0.3Ga0.7As0.02Sb0.98 barrier layers was grown by organometallic vapor phase epitaxy. These lasers, emitting at 2.1 μm, have exhibited pulsed threshold current densities as low as 1.2 kA/cm2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118227
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  • 5
    Electronic Resource
    Electronic Resource
    Thick AlxGa1−xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2513-2515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant charge transfer, which differs from tunneling, over thick AlxGa1−xAs barrier in GaAs/AlxGa1−xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-A(ring)-thick Al0.3Ga0.7As barrier is universally "leaky'' with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117724
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  • 6
    Electronic Resource
    Electronic Resource
    Auger lifetime in InAs, InAsSb, and InAsSb-InAlAsSb quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3153-3155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intensity-dependent photoconductive response to 2.06 μm excitation has been used to determine Shockley-Read and Auger lifetimes for InAs, InAs0.91Sb0.09, and an InAs0.85Sb0.15-InAlAsSb multiple quantum well. The Auger rate at 77 K correlates with the proximity to resonance between the energy gap and the split-off gap. Thus the Auger coefficient in the alloy decreases with decreasing temperature, whereas that in the quantum well increases by nearly a factor of 5 between 300 and 77 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115146
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  • 7
    Electronic Resource
    Electronic Resource
    InAsSb/InAlAs strained quantum-well lasers emitting at 4.5 μm (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3543-3545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained quantum-well lasers emitting at 4.5 μm have been fabricated. The laser structure, grown on a GaSb substrate by molecular beam epitaxy, consists of compressively strained InAsSb active layers and tensile-strained InAlAs barrier layers, surrounded by AlAsSb cladding layers. Under electrical injection, the laser exhibited pulsed operation up to 85 K, with threshold current density of 350 A/cm2 at 50 K. Under optical pumping, the laser operated pulsed up to 144 K, with peak power at 95 K of 0.54 W. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113810
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  • 8
    Electronic Resource
    Electronic Resource
    n-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapor phase epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 400-402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-type doping of AlxGa1−xSb epilayers (0≤x≤1) grown by organometallic vapor phase epitaxy has been achieved by using tritertiarybutylaluminum, triethylgallium, and trimethylantimony as the organometallic precursors and diethyltellurium as the doping source. Electron concentrations exceed 1017 cm−3 for layers with x〈0.3, and decrease to ∼1016 cm−3 for x=1 as a result of higher residual acceptor concentration. Lattice-mismatched double-heterostructure diode lasers with AlGaSb cladding layers and GaSb active layer are demonstrated, and indicate the potential of OMVPE for growth of GaSb-based materials for electronic and optoelectronic devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116698
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  • 9
    Electronic Resource
    Electronic Resource
    175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2936-2938 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple quantum-well diode lasers incorporating compressively strained InAs0.935Sb0.065 wells and tensile-strained In0.15Al0.85As0.9Sb0.1 barriers are reported. These lasers, grown on InAs substrates by molecular beam epitaxy, have emission wavelengths between 3.2 and 3.55 μm. Broad-stripe lasers have exhibited pulsed threshold current density as low as 30 A/cm2 at 80 K and the characteristic temperatures between 30 and 40 K. The maximum pulsed operating temperature is 225 K. Ridge-waveguide lasers have cw threshold current of 12 mA at 100 K, and the maximum cw operating temperature is 175 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116360
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  • 10
    Electronic Resource
    Electronic Resource
    Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 876-878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm2, one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of ∼2.05 μm, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm−1. Single-ended cw power of 1 W is obtained for a 100-μm aperture. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120922
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