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  • Electronic Resource  (49)
  • 1995-1999  (35)
  • 1990-1994  (14)
  • 1
    Electronic Resource
    Electronic Resource
    Superconducting YBa2Cu3O7−δ thin films with three different orientations (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4217-4220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBaCuO have been prepared with (1) the a axis perpendicular to (100) SrTiO3 ; (2) the c axis perpendicular to (100) SrTiO3 ; and (3) the [110] axis perpendicular to (110) SrTiO3. Films were fabricated using a multilayer deposition technique involving three electron guns containing Y, BaF2, and Cu under a pressure of 5×10−5 Torr of O2. As deposited films, which contained polycrystalline and amorphous regions, were later annealed in a furnace under a flowing O2-H2 O atmosphere. X-ray diffraction patterns as well as scanning electron microscopy and high-resolution electron microscopy images confirm that the films are highly oriented, essentially epitaxial. The a-axis oriented film exhibits zero resistance at 90 K and a critical current density of 2.9×106 A/cm2 at 4.2 K while the c-axis oriented film exhibits a Tc of 88 K and a Jc of 0.9×107 A/cm2 at 4.2K; the Jc values were determined magnetically. The [110]-orientation film shows the sharpest transition with a transition width of 1 K and zero resistance at 85 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344932
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic hysteresis of p+ and 3He++ irradiated melt-textured YBa2Cu3O7−δ (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4240-4246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the magnetic hysteresis loops and temperature dependent trapped fields in melt-textured YBa2Cu3O7−δ samples before and after p+ and 3He++ irradiation using a Hall effect magnetometer (HEM) as well as a commercial vibrating sample magnetometer (VSM). For proper 3He++ fluence, the critical current density may be enhanced by a factor of 10. Calculations based on various critical state models show that before the irradiation, the hysteresis loops can be well accounted for by a critical current density of a modified power law field dependence Jc(T,B)=J0(T)/(1+B/B0)n with n=1/2; after the irradiation, the best fit has been achieved by using an exponential form such as Jc(T,B)=J0(T)exp(−B/B0), where B0 is a model dependent parameter. Jc and its field dependence deduced from HEM hysteresis loops are in good agreement with those deduced from the VSM loops, suggesting that the Hall effect magnetometer can be conveniently used to characterize bulk high Tc oxide superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352236
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  • 3
    Electronic Resource
    Electronic Resource
    A three gun sputtering system for the deposition of superconductor/insulator multilayers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2127-2131 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A sputtering deposition system has been developed to grow high-quality superconductor/insulator multilayers specifically for use in fabricating vertically stacked Josephson junctions. A unique feature of the design is the computer control of all parameters involved in the repetitive deposition of multilayers. The computer is interfaced with stepper motors that position the substrate, and shutter wheels. Additional computer controlled stepper motors allow in situ changing of up to five contact masks. The computer is also interfaced to a gas flowmeter that controls the partial pressure of the inert and reactive sputtering gases. High-quality, reproducible multilayer films have been produced and are described. Stacked Josephson junctions have been patterned with the multilayer films and some of their electrical characteristics are presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148107
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  • 4
    Electronic Resource
    Electronic Resource
    Uniform beam profiles of 5 cm convex gridded ion beam source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5379-5380 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Kaufman-type 5 cm convex gridded ion-beam source is characterized in terms of angle-resolved ion-beam current density and beam uniformity at various discharge currents, electromagnet currents, and acceleration potentials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146475
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of the nanoscale epitaxial growth of diamond on Si (100) surface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1813-1815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≈7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360975
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  • 6
    Electronic Resource
    Electronic Resource
    Vortex structure and cavity modes in stacked double Nb/AlOx/Nb Josephson junctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2949-2954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the static I–V characteristics and cavity modes in stacked double Nb/AlOx/Nb Josephson junctions. In junction stacks consisting of two junctions with identical critical currents Ic, the Ic vs H characteristics have been observed to deviate from the usual Fraunhofer pattern in the small junction limit; the data are consistent with a model involving a structural phase transformation to a triangular vortex lattice with increasing H. In a finite voltage state interlayer coupling leads to splitting of the Swihart mode, which manifests itself as Fiske steps with different voltage spacings. The results provide clear evidence that the two junctions in the stack do phase lock. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363151
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  • 7
    Electronic Resource
    Electronic Resource
    Pulsed organometallic beam epitaxy of complex oxide films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1503-1505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4–10−2 Torr) and low substrate temperature (600–680 °C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105301
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1293-1295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of oxide–semiconductor interfaces formed by wet thermal oxidation of a thin epitaxial AlAs layer. Photoluminescence (PL) from a quantum well in close proximity to the interface is monitored before and after oxidation. The normalized PL intensity was found to decrease roughly in proportion to the degree of completeness of the oxidation. The diminishing luminescence is attributed to the presence of trap states formed at the oxide–semiconductor interface formed during the oxidation process; hydrogen ion treatment is effective in the partial restoration of the luminescence. In addition to the traps, the oxidation process also "disorders" the material within ∼15 nm from the semiconductor–oxide interface, as revealed by transmission electron micrographs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118555
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  • 9
    Electronic Resource
    Electronic Resource
    Anomalous Hall effect in (110)Fe/(110)Cr multilayers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 479-481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the Hall effect and the magnetoresistance in [110] textured Fe/Cr multilayers grown by electron beam evaporation. We have observed a strong magnetic field dependence of the Hall coefficient as well as a large magnetoresistance. In all cases the Hall voltage is positive. The ordinary Hall coefficient is positive at room temperature and changes sign at low temperatures; this is similar to the behavior of an antiferromagnet but differs from that observed in Fe-Cr alloys. The extraordinary Hall coefficient Rs is positive and varies with the resistivity ρ as Rs∝ρ2.6, suggesting the importance of interface scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105414
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  • 10
    Electronic Resource
    Electronic Resource
    Transport properties in n-type InSb films grown by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 964-966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the temperature and magnetic field dependence of the Hall mobility and transverse magnetoresistance in n-type InSb films epitaxially grown on GaAs substrates by metalorganic chemical vapor deposition. The films show a giant magnetoresistance: e.g., at 240 K the resistivity increases over 20 times at a magnetic field of 5 T; the low field coefficient of resistivity at 77 K is as high as 47.5 μΩ cm/G. The Hall mobility decreases with magnetic field and saturates at higher fields. By taking the interface carrier transport into account, the observed field dependence of the Hall mobility and magnetoresistance may be understood based on a two-layer model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109859
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