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  • 11
    Electronic Resource
    Electronic Resource
    Epitaxial YBa2Cu3O7−δ thin films on SrRuO3/Pt/MgO (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YBa2Cu3O7−δ (YBCO) thin films were deposited on (100) MgO using platinum and SrRuO3 (SRO) buffer layers by pulsed laser deposition. The films were (001) textured normal to substrate surface with a high degree of in-plane orientation with respect to the substrate's major axes. YBCO films showed superconducting transition temperature (Tco) at 91 K and critical current densities were found to be 2–3×106 A/cm2 at 77 K and zero field. An ion beam minimum channeling yield of 16% was obtained for YBCO films, indicating high crystallinity. The orientation relationship for this epitaxial multilayer structure was found to be (100) YBCO(parallel)(100) SRO(parallel)(100)Pt(parallel)(100) MgO. This result showed that high-quality superconducting thin films can be deposited on metal with an appropriate buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111965
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  • 12
    Electronic Resource
    Electronic Resource
    High-temperature superconductor Josephson junctions with a gradient Pr-doped Y1−xPrxBa2Cu3O7−δ (x=0.1, 0.3, 0.5) as barriers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2866-2868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconductor YBa2Cu3O7−δ based superconducting-normal-superconducting (SNS) Josephson junctions were fabricated using a unique device design. The normal material included a gradient Pr-doped Y1−xPrxBa2Cu3O7−δ layer which was composed of a light doping (x=0.1) next to both YBa2Cu3O7−δ electrodes, a slightly higher doping (x=0.3) towards the center, and a doping concentration of x=0.5 in the middle of the N layer. This design graded the lattice mismatch between YBa2Cu3O7−δ and the N layer, thus avoiding the accumulation of all the lattice strain at one interface. It also results in good chemical, thermal, and structural compatibility between adjacent layers for the desired multilayer structures. The SNS junctions fabricated in this way showed resistively shunted junction current-voltage characteristics under dc bias and Shapiro steps under microwave irradiation at a temperature in the range of 75–87 K. Direct current superconducting quantum interference devices showed a voltage modulation about 5 μV by a magnetic field at liquid nitrogen temperature. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112518
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  • 13
    Electronic Resource
    Electronic Resource
    Preparation of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 30-32 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high-quality 〈00l〉 textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si by interposing 〈00l〉 textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 ns). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9×10−4 Torr) at 775 °C on (001)Si substrate having 〈001〉 YSZ//〈001〉Si texture. The YBCO thin films were deposited in situ in oxygen ambient (200 mTorr) at 650 °C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530 °C and 0.4–0.6 Torr, respectively. The laser fluence to deposit this multistructure was 2.5–5 J/cm2. The 〈00l〉 textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2, and a coercive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109740
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  • 14
    Electronic Resource
    Electronic Resource
    Improvement in the properties of high Tc films fabricated in situ by laser ablation of YBa2Cu3O7-Ag targets (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 255-257 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the microstructural and superconducting properties of YBa2Cu3O7 films fabricated by pulsed laser evaporation of YBa2Cu3O7-Ag targets, containing approximately 30% by weight of silver. The films produced by excimer laser evaporation/ablation of YBa2Cu3O7-Ag targets were found to possess better superconducting and microstructural properties than films prepared under the same conditions from bulk YBa2Cu3O7 targets. YBa2Cu3O7 films deposited on yttria stabilized zirconia (YSZ) substrates from YBa2Cu3O7-Ag targets at 650 °C showed helium ion channeling yields of approximately 9%–12%, while films deposited from YBa2Cu3O7 targets had channeling yields in the range of 18%–25%. The critical current density of YBa2Cu3O7Agx films on YSZ substrates had values of approximately 1.8×106 A/cm2 at 77 K which corresponds to approximately an 80% improvement from the values obtained from films deposited from cold pressed YBa2Cu3O7 targets. Based on the structural and chemical information, it appears that two effects play a major role in improving the superconducting properties of laser ablated thin films made from silver composite superconductor targets (i) improved evaporation characteristics of the targets due to silver incorporation and (ii) the catalyst effect of silver in stabilizing the superconducting phase and enhancing grain growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106954
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  • 15
    Electronic Resource
    Electronic Resource
    Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2693-2695 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112608
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  • 16
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of thick YBa2Cu3O7−δ films with Jc≥1 MA/cm2 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1848-1850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using pulsed laser deposition, YBa2Cu3O7−δ (YBCO) films ranging in thickness from 0.065 to 6.4 μm have been deposited on yttria-stabilized zirconia substrates with an intermediate layer of CeO2. The thinnest films have critical current densities of over 5 MA/cm2 at 75 K with zero applied field; as film thickness is increased, Jc decreases asymptotically to 1 MA/cm2. X-ray analysis of a 2.2-μm-thick film shows that the YBCO is predominantly c-axis oriented and textured in-plane, while a Rutherford backscattering spectrometry minimum channeling yield of ≈75% indicates that the film contains disordered material at this thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110653
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  • 17
    Electronic Resource
    Electronic Resource
    Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1290-1292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report epitaxial growth of TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using x-ray diffraction, Rutherford backscattering, four-point-probe ac resistivity, high resolution transmission electron microscopy and scanning electron microscopy techniques and epitaxial relationship was found to be 〈100〉 TiN (parallel) 〈100〉 Si. TiN films showed 10%–20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Four-point-probe measurements show characteristic metallic behavior of these films as a function of temperature with a typical resistivity of about 15 μΩ cm at room temperature. Implications of low-resistivity epitaxial TiN in silicon device fabrication are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107568
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  • 18
    Electronic Resource
    Electronic Resource
    In situ single-chamber laser processing of YBa2Cu3O7−δ superconducting thin films on yttria-stabilized zirconia buffered (100)GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 357-359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−δ(YBCO) thin films have been deposited in situ on GaAs(100) by laser evaporation using yttria-stabilized zirconia (YSZ) as a buffer layer. The YSZ buffer layer was deposited at room temperature initially, followed by a deposition at 650 °C. The YBCO layers were deposited subsequently at substrate temperature of 650 °C. All the depositions were carried out in a single chamber equipped with a multitarget holder using KrF excimer laser, λ=248 nm. The morphology and structure of the buffer layer and YBCO films were determined using x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Auger spectroscopy. The nature of YSZ films was determined to be polycrystalline with partial texturing. The YBCO superconducting thin films on these YSZ-coated GaAs specimens exhibited strong (00l) orientation with peak intensities similar to those observed on single-crystal YSZ substrates. The superconducting transition temperature Tc (onset) of 92 K and Tc0(zero resistance) of 73 K were achieved for YBCO thin films on GaAs with YSZ buffer layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105594
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  • 19
    Electronic Resource
    Electronic Resource
    Relationship between leaf water spin-lattice relaxation time and water relation parameters in three wheat cultivars (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 16 (1993), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Pot culture studies were conducted using two drought-tolerant and one susceptible cultivar of wheat (Triticum aestivum L.) under three different moisture regimes. Proton spin-lattice relaxation time, T1, leaf water content, LWC, leaf water potential, Ψ, solute potential, Ψs and turgor potential, Ψp were measured from 45 to 75 d after sowing at weekly intervals. The three cultivars did not differ significantly in their values of LWC, leaf water potential, and their components in the stressed and unstressed plants; but they did differ significantly in their T1 values both under stressed and unstressed conditions on all days of measurement, with the drought tolerant cultivars having a higher T1 compared to the susceptible cultivar. This suggests that leaf water T1 is a better parameter for describing plant water status than the traditional water relation indices. The relation between Ψ and T1 was logarithmic, indicating the similarity between T1 and water activity of the cellular water.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1993.tb00848.x
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  • 20
    Electronic Resource
    Electronic Resource
    Schiff base complexes derived from chromium, molybdenum and tungsten hexacarbonyls. Preparation, characterization and reaction with nitric oxide
    Amsterdam : Elsevier
    Polyhedron 11 (1992), S. 1181-1185 
    Details
    ISSN: 0277-5387
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0277-5387(00)86926-0
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