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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 194-196 (1994), S. 145-146 
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 28 (1995), S. 375-384 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The direct observation of crystal structure at ultra-low temperatures helps better understanding of phase transformations and phase stability. Two sets of 3He-4He dilution refrigerators with a top-loading facility were installed at BL-3C2 and 6C1 of the Photon Factory. The first is used exclusively for topography of quantum crystals of solid 3He and 4He for studies of lattice defects. Typical examples of topographs that indicate an annealing effect of solid helium, understood in terms of a quantum tunneling, are presented. The disappearance of downward diffraction Laue spots (2θB = 90°) is discussed on the basis of the temperature and other factors in solid helium. The second refrigerator is used for X-ray diffraction studies of crystalline solids. A splitting of the Laue spots from Cs2NaHoCl6 below 150 mK, giving evidence of a cooperative Jahn–Teller transition of the first kind at the lowest transition temperature ever observed, is briefly explained as an example of diffractometry.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 194-196 (1994), S. 145-146 
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4671-4678 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photon-gated persistent spectral hole burning was observed for metal-free tetraphenylporphine with halogenated anthracene derivatives in poly(methylmethacrylate) or poly(ethylene) at liquid-helium temperatures. The hole formation yield was markedly dependent on the polymer matrices and the sample composition as well as on the gating wavelength. The irreversible broadening of holes in the systems measured by temperature cycling experiment was smaller than that by proton tautomerization of tetraphenylporphine. We concluded that the hole formation mechanism is donor-acceptor electron transfer on the basis of combined analysis of the matix and acceptor concentration dependence of hole formation yield, the action spectrum of the gating photon and the photoproduct spectrum.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5927-5929 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study was carried out to improve permeability and coercivity of pure iron without decreasing its saturation magnetization. It was found that about 1-wt % addition of aluminum in combination with a high-temperature annealing process greatly increases its permeability (μm) up to 60 000, which is close to that of Permalloy B, and reduces its coercivity (Hc) to 0.2 Oe without decreasing the high-saturation magnetization of pure iron. This marvelous effect of the 1-wt %-Al addition can be attributed to a stabilization of the ferrite phase which enables ferrite grains to coarsen drastically due to abnormal grain growth during the high-temperature annealing. The ferrite stabilization also helps to avoid both residual strain and grain refining due to the austenite-ferrite phase transformation, which are thought to be undesirable for soft magnetic properties. In the present paper, the performance of this Fe–1-wt %-Al soft magnetic alloy, and an example of its practical application to the magnetic shielding, will be described.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 749-751 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the amount of aluminum trifluoride (AlF3) piled up at the interface of chemical vapor deposited tungsten and the aluminum under layer on the deposition time and subsequent annealing in ultrahigh vacuum (UHV) or in monosilane (SiH4) gas has been studied. AlF3 is formed by the reaction of the aluminum under layer with tungsten hexafluoride (WF6) during the initial state of tungsten chemical vapor deposition. Tungsten was deposited on an Al layer under selective deposition conditions by SiH4 reduction at 250 °C. X-ray photoelectron spectroscopy measurement reveals that the amount of AlF3 decreases with an increase in the tungsten deposition time and that the reduction of AlF3 by volatilization of aluminum fluorides, which occurs at higher temperatures ((approximately-greater-than)400 °C) is not observed at low temperature (270 °C). Annealing in SiH4 gas after the tungsten deposition was effective to reduce the amount of AlF3 compared with annealing in UHV. This result and thermochemical data would suggest that the dependence of the amount of AlF3 on the tungsten deposition time is explained by the reduction of AlF3 with hydrogen atoms supplied from the dissociation of SiH4.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Cr-Ti underlayer is found to enhance the in-plane coercive forces of Co-Cr-Pt and Co-Cr-Ta films; the maximum coercive force was 3.5 kOe for (CoCr0.15)0.84Pt0.16/CrTi0.2. The crystallites of Cr-Ti grow in a more highly oriented and uniform manner than ones of Cr, and their lattice spacings are closer to those of Co alloys than Cr, improving the epitaxial growth of Co-alloy crystallites with c-axis in-plane oriented components on the Cr-Ti underlayer. The crystalline anisotropy constant of Co-Cr-Pt with a high Pt concentration is found by torque measurement to be larger than that of Co-Cr-Ta. These can produce extremely high coercive forces in Co-Cr-Pt/Cr-Ti. The C/Co-Cr-Pt/Cr-Ti thin film media with high coercive forces show excellent read/write characteristics; the linear densities at 50% signal drop are very high, 175 and 101 kFCI, for the C/Co-Cr-Pt/Cr-Ti media at head-to-magnetic layer spacings of 0.01 and 0.07 μm.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 374-379 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-color photon-gated persistent spectral hole burning (PSHB) via donor-acceptor electron transfer is reported in systems where the acceptor, 10-chloroanthracene, was intentionally branched to a side chain of the poly(methylmethacrylate) (PMMA) host polymer while the donor, metal-free tetraphenylporphine, was dispersed in the polymer. The systems, which had an acceptor concentration of up to 10−1 M, were prepared without aggregation of the acceptor. Spectral holes were burnt in the Qx(0,0) absorption band of the donor when the systems were simultaneously irradiated with a frequency-selective excitation (duration: 500 ps; energy: 200 nJ/cm2) and a gating excitation (wavelength: 514.5 nm; duration: 33 ms; energy: 14 μJ/cm2). The difference absorption spectrum between the unburned absorption spectrum and one recorded after photon-gated PSHB has confirmed that the hole formation mechanism is donor-acceptor electron transfer from a photoexcited donor to a ground-state branched acceptor. The thermal stability of burnt holes measured with a temperature cycling experiment increased when the acceptor was branched into PMMA. The effect of acceptor branching on the PSHB characteristics is discussed with reference to those for an acceptor-doped system.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5610-5614 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effect of ball-forming conditions on the microstructure and the hardness of balls has been investigated in order to obtain soft balls suitable for a reliable ball-bonding process using copper wire. Copper balls formed in a room-temperature shield gas are found to be harder by 6 Hv than fully annealed copper wires of the same purity. This is caused by many dislocation loops which are generated in balls due to inclusion of gaseous impurities from the atmosphere and due to rapid solidification. On the other hand, copper balls formed in a shield gas heated above 175 °C are found to be softer by the amount of 4.5 Hv than balls formed in a room-temperature shield gas. This is due to disappearance of dislocation loops caused by the reduction of solidification rate and by elimination of gaseous impurities from the balls during solidification. Impurities, especially oxygen, are found to have a strong influence on the hardening of copper balls. From these results, we conclude that copper balls formed in a shield gas heated at 175 °C are suitable for mass production.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 760-766 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A niobium membrane was immersed in hydrogen plasma and could be electrically biased to vary the energy of bombarding ions in the range of 1–200 eV. The fluxes of plasma driven absorption and permeation were almost entirely governed by incident suprathermal neutrals (mostly, thermal atoms), whose energy does not depend on membrane bias, but the ions of controllable energy do affect the neutral-induced permeation through modifying the membrane surface. At the zero bias a high temperature-independent plasma driven permeation (superpermeation) was observed alongside of an enhanced absorption. Bombardment by ions of an energy higher than 50 eV resulted in a sharp decrease of the plasma driven permeation/retention and in an acceleration of boundary processes of absorption/reemission of thermal molecules. At ion energies below 50 eV, the effect of ion bombardment on the plasma driven permeation and the kinetic coefficients of boundary processes were nonmonotonic in ion energy, having a maximum at ∼10 eV. Both an in situ doping with O of the bulk of Nb and a membrane temperature increase reduced the effects of ion bombardment to their complete disappearance. Responsible for that was the replenishment by means of surface segregation of an oxygen monolayer sputtered by ion bombardment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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