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  • Artikel: DFG Deutsche Nationallizenzen  (20)
  • 1990-1994  (10)
  • 1985-1989  (10)
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  • Artikel: DFG Deutsche Nationallizenzen  (20)
Materialart
Erscheinungszeitraum
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  • 1
    Digitale Medien
    Digitale Medien
    The high-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6721-6726 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A rapid thermal anneal (RTA) in an NH3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 °C in NH3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 °C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi2 phase. In contrast, after a prior 900 °C RTA in NH3, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 °C NH3 anneal. The NH3-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 °C, at which point some increase in contact resistance was measured.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342003
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  • 2
    Digitale Medien
    Digitale Medien
    The formation of a continuous amorphous layer by room-temperature implantation of boron into silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1414-1418 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ion implantation of 60 keV boron into {100} silicon at medium beam currents (150 μA) was performed at 300–315 K over the dose range from 1 to 8×1016/cm2. Diffraction contrast and high-resolution phase contrast transmission electron microscopy (TEM) were used on plan-view and 90° cross-section samples to study the formation of a continuous amorphous layer as a function of increasing dose. Our TEM results show that, unlike implantation of Si with heavier ions where amorphization initially occurs at or around the projected range, the amorphization by high dose (〉5×1016/cm2) B+-implanted Si first occurs at and/or near the surface. It is proposed that the buildup of a high concentration of vacancies which inevitably occurs near the surface during high-dose B+ implantation is primarily responsible for the observed near-surface amorphization. Based on the results of this investigation and those available in the published literature, it appears that low temperature (slow recombination rate for point defects) and high beam current (high generation rate for point defects) implantation may result in the optimum conditions for amorphous layer formation with boron.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341122
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  • 3
    Digitale Medien
    Digitale Medien
    Annealing and oxidation behavior of low-pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2830-2835 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A WSix≈2.6 film was deposited by low-pressure chemical vapor deposition at 350–420 °C onto a P-doped polycrystalline silicon/SiO2/Si substrate. This polycide structure (with or without a subsequent As+ source/drain implant) was heat treated in the following manner: (i) 1000 °C/N2 anneal for 20 min, (ii) oxidation both in dry oxygen and in steam ambients at 920–950 °C (50 min–8 h), and (iii) N2 anneal as well as dry oxidation at 920 °C/50 min. Cross-sectional transmission electron microscopy, Rutherford backscattering, secondary ion mass spectrometry, and sheet resistance measurements were used for characterization. The as-deposited film was mostly amorphous with a fine grain structure. The N2 anneal caused the formation of a polycrystalline WSix〉2 film containing tetragonal WSi2. Dry oxidation produced a void-containing SiO2 layer atop the silicide film. However, the SiO2 layer was impregnated with W particles when the silicide film was steam oxidized. The role of excess Si in refractory metal silicide films during annealing and oxidation is discussed. The effect of stress at the corners of a step in a patterned wafer during the oxidation of tungsten polycide is also demonstrated.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339414
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  • 4
    Digitale Medien
    Digitale Medien
    Effect of post-silicidation annealing on TiSi2/p+-n Si junctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1882-1886 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The reverse-bias leakage of TiSi2/p+-n Si junctions is 〈10 nA/cm2 for 0.1-μm-deep p+-Si with a TiSi2 sheet resistance of 1.7 Ω/sq, and is essentially independent of carrier concentration, and the amount of B consumed during silicidation. Forward-bias current characteristics show that the TiSi2 contacts are ohmic with significant recombination currents and high-level injection at voltages below the series resistance limit. Post-silicidation annealing for 30 min at 920 °C, with or without an overlayer of borophosphosilicate glass, increases the majority-carrier concentration and does not cause B to diffuse out of the Si. Also, minority-carrier lifetimes show a twofold increase after annealing and this results in nearly ideal junctions with leakage that is dominated by diffusion currents. Thus, TiSi2/p+-n Si is thermally stable under conditions that are compatible with glass flow and reflow processing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339573
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  • 5
    Digitale Medien
    Digitale Medien
    Proton, deuteron, and helium implantation into GaAs and LiNbO3 for waveguide fabrication (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5006-5010 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hydrogen and helium implantation into GaAs, LiNbO3, and other crystals has been shown to produce planar or channel waveguides via defects/damage and/or carrier removal or compensation. We have measured implanted depth distributions of 1H, 2H, and 4He in GaAs and LiNbO3 as functions of ion energy, ion fluence, substrate temperature, and annealing temperature using secondary ion mass spectrometry. We have studied the defect depth distribution for hydrogen-implanted GaAs by transmission electron microscopy. We have determined the lateral spread of 1H and 2H ions implanted into GaAs by varying the angle of implantation; this relates to the increase in width of closely spaced parallel channel waveguides made using patterned masks.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.335275
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  • 6
    Digitale Medien
    Digitale Medien
    Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6589-6591 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or SiO2 ) rapid thermal annealing (RTA) at 900–1000 °C and to depend on the Be dose and its proximity to the surface. The outdiffusion is more pronounced when the Be implant is shallow (〈0.1 μm) and/or the Be+ dose is high (〉1×1015 cm−2 ). It is demonstrated that the Be outdiffusion is driven by the presence of a highly damaged surface layer. Auger results suggest the formation of a BeOx compound at the surface of a high-dose (1×1016 cm−2 ) Be-implanted sample that underwent capless RTA at 1000 °C/1 s. It appears that BeOx formation occurs when the outdiffused Be interacts with the native Ga/As oxides during annealing. All the Be remaining in the GaAs after a 〉900 °C/2 s RTA is electrically active.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345093
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  • 7
    Digitale Medien
    Digitale Medien
    Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 344-353 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin Ti films sputter deposited onto single-crystal Si, thermal SiO2, and low-pressure chemical vapor deposited Si3N4 and SiOxNy (x≈y≈1) substrates have been rapid thermal annealed in N2 or Ar, with and without an amorphous Si overlayer, and the reactions followed using Auger elecron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A multilayer film is created in practically every case with each layer containing essentially a single reaction product, viz.,TiSix, TiOx, δ-TiN, or TiNxO1−x. The results are discussed in light of published Ti-Si-O and Ti-Si-N phase diagrams.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341434
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  • 8
    Digitale Medien
    Digitale Medien
    Range and shape factors, damage, regrowth, and redistribution for Ag implants in (100) and (111) Si (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1355-1358 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The nature of regrowth of implantation-damaged (100) and (111) Si was investigated by measuring the depth distribution of implanted Ag atoms following annealing at 550 °C for fluences of 1×1012 to 1×1015 cm−2. Cross-section transmission electron microscope measurements were made for a few conditions to compare damage depth distributions. Other factors studied were anneal time, Si growth technique, Ag atom densities, and the transition region between amorphous and crystalline Si. Ranges and profile shape factors are reported for 150, 300, 450, and 600 keV Ag implants into Si.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.338952
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  • 9
    Digitale Medien
    Digitale Medien
    Passivation of n and p dopants in ion-implanted GaAs by a 2D+ plasma (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 385-387 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a 2D plasma under identical conditions. Even though a discrete band of dislocation loops was present in both the samples, the 2D distribution in the two cases was remarkably different. In the Si-implanted sample the 2D followed the carrier distribution, whereas in the Mg-implanted sample it followed the distribution of dislocation loops. Phenomenological mechanisms of 2D interaction with dopants/dislocations in GaAs are postulated.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104642
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  • 10
    Digitale Medien
    Digitale Medien
    Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have achieved solid phase epitaxy of thin amorphous Si layers on GaAs using in situ plasma processing and subsequent annealing. High-resolution transmission electron microscopy of the SiO2/Si/GaAs structure shows that a Si layer (approximately-equal-to)20 A(ring) thick epitaxially crystallizes on GaAs after annealing at (approximately-equal-to)570 °C in N2. Metal-oxide-semiconductor capacitors fabricated on these structures confirm the high quality of these interfaces. By comparing a high- frequency (100 kHz) capacitance-voltage curve with a quasi-static one, interface state densities as low as 4×1012 eV−1/cm−2 were measured on both n- and p-type GaAs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104820
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