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  • Electronic Resource  (49)
  • 1995-1999  (35)
  • 1990-1994  (14)
  • 1
    Electronic Resource
    Electronic Resource
    Observation of the nanoscale epitaxial growth of diamond on Si (100) surface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1813-1815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≈7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360975
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  • 2
    Electronic Resource
    Electronic Resource
    Vortex structure and cavity modes in stacked double Nb/AlOx/Nb Josephson junctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2949-2954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the static I–V characteristics and cavity modes in stacked double Nb/AlOx/Nb Josephson junctions. In junction stacks consisting of two junctions with identical critical currents Ic, the Ic vs H characteristics have been observed to deviate from the usual Fraunhofer pattern in the small junction limit; the data are consistent with a model involving a structural phase transformation to a triangular vortex lattice with increasing H. In a finite voltage state interlayer coupling leads to splitting of the Swihart mode, which manifests itself as Fiske steps with different voltage spacings. The results provide clear evidence that the two junctions in the stack do phase lock. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363151
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  • 3
    Electronic Resource
    Electronic Resource
    Uniform beam profiles of 5 cm convex gridded ion beam source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5379-5380 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Kaufman-type 5 cm convex gridded ion-beam source is characterized in terms of angle-resolved ion-beam current density and beam uniformity at various discharge currents, electromagnet currents, and acceleration potentials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146475
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  • 4
    Electronic Resource
    Electronic Resource
    A three gun sputtering system for the deposition of superconductor/insulator multilayers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2127-2131 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A sputtering deposition system has been developed to grow high-quality superconductor/insulator multilayers specifically for use in fabricating vertically stacked Josephson junctions. A unique feature of the design is the computer control of all parameters involved in the repetitive deposition of multilayers. The computer is interfaced with stepper motors that position the substrate, and shutter wheels. Additional computer controlled stepper motors allow in situ changing of up to five contact masks. The computer is also interfaced to a gas flowmeter that controls the partial pressure of the inert and reactive sputtering gases. High-quality, reproducible multilayer films have been produced and are described. Stacked Josephson junctions have been patterned with the multilayer films and some of their electrical characteristics are presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148107
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic hysteresis of p+ and 3He++ irradiated melt-textured YBa2Cu3O7−δ (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4240-4246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the magnetic hysteresis loops and temperature dependent trapped fields in melt-textured YBa2Cu3O7−δ samples before and after p+ and 3He++ irradiation using a Hall effect magnetometer (HEM) as well as a commercial vibrating sample magnetometer (VSM). For proper 3He++ fluence, the critical current density may be enhanced by a factor of 10. Calculations based on various critical state models show that before the irradiation, the hysteresis loops can be well accounted for by a critical current density of a modified power law field dependence Jc(T,B)=J0(T)/(1+B/B0)n with n=1/2; after the irradiation, the best fit has been achieved by using an exponential form such as Jc(T,B)=J0(T)exp(−B/B0), where B0 is a model dependent parameter. Jc and its field dependence deduced from HEM hysteresis loops are in good agreement with those deduced from the VSM loops, suggesting that the Hall effect magnetometer can be conveniently used to characterize bulk high Tc oxide superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352236
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  • 6
    Electronic Resource
    Electronic Resource
    Pulsed organometallic beam epitaxy of complex oxide films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1503-1505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4–10−2 Torr) and low substrate temperature (600–680 °C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105301
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  • 7
    Electronic Resource
    Electronic Resource
    Superconducting YBa2Cu3O7−δ thin films with three different orientations (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4217-4220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBaCuO have been prepared with (1) the a axis perpendicular to (100) SrTiO3 ; (2) the c axis perpendicular to (100) SrTiO3 ; and (3) the [110] axis perpendicular to (110) SrTiO3. Films were fabricated using a multilayer deposition technique involving three electron guns containing Y, BaF2, and Cu under a pressure of 5×10−5 Torr of O2. As deposited films, which contained polycrystalline and amorphous regions, were later annealed in a furnace under a flowing O2-H2 O atmosphere. X-ray diffraction patterns as well as scanning electron microscopy and high-resolution electron microscopy images confirm that the films are highly oriented, essentially epitaxial. The a-axis oriented film exhibits zero resistance at 90 K and a critical current density of 2.9×106 A/cm2 at 4.2 K while the c-axis oriented film exhibits a Tc of 88 K and a Jc of 0.9×107 A/cm2 at 4.2K; the Jc values were determined magnetically. The [110]-orientation film shows the sharpest transition with a transition width of 1 K and zero resistance at 85 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344932
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  • 8
    Electronic Resource
    Electronic Resource
    Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3422-3424 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed heating measurements on holes in a strained Ge/Si0.4Ge0.6 quantum well and electrons in a strained Si/Si0.7Ge0.3 quantum well in the temperature range 0.3–5.5 K. While a power law dependence of carrier temperature on current, Te∼Ia, was observed for both samples, the measured values for the current exponent are different: a=0.50±0.02 for the Ge sample and 0.40±0.02 for the Si sample. We attribute this exponent difference to the difference in their phonon dimensionality. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119190
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  • 9
    Electronic Resource
    Electronic Resource
    High energy resolution x-ray detection based on a coupled Fiske cavity and Josephson junction oscillator (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1631-1633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the use of a miniature microwave Fiske cavity coupled to a Josephson junction oscillator to monitor the dynamic quasiparticle population created in the surrounding superconductor by incident x rays. An expression is obtained for the phase velocities of the TM modes supported by this structure. The design has the advantage of being inherently thick—sufficient to completely absorb low energy x rays and is potentially scalable to a pixilated device with a pixel size 50 μm in linear dimension. The device represents an alternative strategy to implement the dynamic microwave absorption approach suggested by Gulian and Van Vechten and subsequent variations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117054
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of highly conductive RuO2 thin films on (100) Si (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37±2 μΩ cm. The residual resistance ratio (R300 K/R4.2 K) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115715
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