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  • 1
    Electronic Resource
    Electronic Resource
    Si acceptor excited states in ion-implanted InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5171-5173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence has been used to investigate the behavior of Si-implanted InP, submitted to a postimplantation rapid thermal annealing. Compared with the non-implanted material, the implanted crystal displays a new broad band around 1.382 eV, in the low temperature (2 K) spectra. This band appears to be made of two unresolved recombination paths ascribed to the electron–acceptor (e,A°) and donor–acceptor pair recombinations of the silicon acceptor impurity substituted on phosphorus site. Besides the Zn-related transitions to s and p excited states, the selective excitation of the donor–acceptor pairs reveals additional recombination paths, ascribed to transitions to 2s3/2 and 2p5/2 (Γ7 and Γ8) excited states of silicon. The acceptor behavior of Si in InP is hence given a definite support by this work. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359751
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of processing-induced defects in high-purity InP by photoluminescence (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1080-1085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence experiments were performed on high-purity InP substrates as a function of heat treatment, flat-profile ion implantation and subsequent annealing procedures. Whereas the well resolved near band edge luminescence proved the superior substrate quality, up to 6 sharp luminescence lines (some of them not reported so far) and one shallow broad-band emission were observed after Si3N4 deposition and various annealing procedures. From the temperature dependence of the luminescence peak intensities the activation energies of the novel lines were determined and discussed in terms of excitons bound to processing-induced complex defects. These assignments are supported by the observation of a strong enhancement of the luminescence after low dose Ar+ ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351783
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  • 3
    Electronic Resource
    Electronic Resource
    Role of surface morphology in wafer bonding (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 257-260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain patterns detected by x-ray topography in wafers bonded for silicon-on-insulator (SOI) technology were found related to the flatness nonuniformity of the original wafers. Local stresses due to the bonding process are estimated to be about 1×108 dynes/cm2. The stress is reduced about 100 times for the thin (0.5 μm) SOI films. Most of the wafer deformation occurs during room temperature mating of the wafers. The deformation is purely elastic even at 1200 °C. The magnitude of the stress appears insignificant for complimentary metal-oxide-semiconductor devices performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347760
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  • 4
    Electronic Resource
    Electronic Resource
    Gas source molecular-beam epitaxy of Si and SiGe using Si2H6 and GeH4 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1008-1012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas source molecular-beam epitaxy (MBE) has been studied as a low-temperature Si and SiGe epitaxial method. Specular single-crystalline silicon films were successfully grown by the gas source Si MBE technique at a substrate temperature of about 650 °C. N-type doping was carried out using PH3 gas as a dopant and the maximum electron concentration of 2.9x1019cm−3 was obtained. Furthermore, p-type doping using B2H6 gas was carried out for the first time and the maximum hole concentration of 9.5×1017cm−3 was successfully achieved. The SiGe alloy layer was also grown by the gas source MBE technique using GeH4 as a Ge source gas. The Ge concentration of the sample could be precisely controlled by the molar fraction of Ge in supply and it was increased up to 0.30 with increasing the gas ratio of GeH4 to Si2H6.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347415
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  • 5
    Electronic Resource
    Electronic Resource
    A selective polishing approach for the fabrication of bonded-wafer silicon-on-insulator (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2993-2998 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new polishing machine has been constructed for the fabrication of bonded-wafer silicon-on-insulator (bonded-wafer SOI) through a numerically controlled polishing technique. The polishing machine is equipped with 32 small-area tools which produce the variation of polishing pressure over a wafer surface. The tools do not rotate. Instead, the wafers being polished perform an oscillatory motion. A tool removal profile which was adequate for selectively polishing one place on a wafer without affecting its neighboring areas was obtained. As a result of its test operation, the initial thickness deviation of σ=380 nm of the top Si layer of a bonded-wafer SOI sample has been improved to σ=48 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144345
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  • 6
    Electronic Resource
    Electronic Resource
    Excited-state spectroscopy of identified Mg acceptor in InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence experiments under resonant excitation have been performed at low temperature in Mg+-implanted bulk InP. The energy difference between the ground 1S3/2 and excited 2S3/2 states of the Mg acceptor is accurately measured by two-hole spectroscopy of Mg-acceptor bound exciton. Selective excitation of donor-acceptor pairs luminescence allows the identification of a set of 2P3/2 and 2P5/2 excited states. The measured values to be compared with similar published data obtained for Zn and C represent an additional step in the process of accurate identification of acceptors in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102781
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  • 7
    Electronic Resource
    Electronic Resource
    Direct observation of the Cu2−xSe phase of Cu-rich epitaxial CuInSe2 grown on GaAs (001) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6926-6928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu2−xSe is an important impurity phase of the ternary chalcopyrite semiconductor CuInSe2 associated with Cu/In composition ratios greater than unity. We have observed directly in a prototypical epitaxial system the formation of Cu2−xSe on Cu-rich CuInSe2 thin films epitaxially grown on GaAs (001). Atomic force microscopy measurements of the surface topology of as-grown films clearly show faceted rectangular crystallites with dimensions on the order of 100 nm. Cross-sectional transmission electron microscopy measurements of the Cu-rich CuInSe2 showed rectangular protrusions on the surface as well as wedge shaped facets in the CuInSe2 film. Two-dimensional reciprocal space x-ray mapping of the as-grown Cu-rich CuInSe2 showed the in-plane lattice constant of the Cu2−xSe phase to be partially strained to the CuInSe2 layer. The presence of the β phase of Cu2−xSe is also presented as an alternative explanation for Cu–Pt ordering reports in CuInSe2 that have appeared in the literature. Strain-related surface undulations observed only in Cu-rich CuInSe2 are also linked to the presence of this strained Cu2−xSe layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368991
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  • 8
    Electronic Resource
    Electronic Resource
    Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1289-1291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 epitaxial films grown on (001)-oriented GaAs substrates by molecular beam epitaxy have been characterized by means of low temperature photoluminescence spectroscopy at T=2–102 K. Distinct emission lines were observed near the band gap, and have been investigated further with varying sample temperature. An emission at 1.0386 eV (EX1) became broader with increasing sample temperature, and still remained up to T=102 K. A distinct, sharp emission at 1.0311 eV (IX1) which disappeared at a significantly lower temperature than the other peaks was observed only in films with weak donor-related emissions. We attribute such emissions to the ground-state free exciton [FEn=1] and exciton bound to neutral acceptor [A0,X], respectively. The band gap of CuInSe2 epitaxial films was also determined to be Eg=1.046 eV at 2 K using the reported exciton binding energy of Eex=7 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114400
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of the surface Cu2−xSe phase on the growth and properties of CuInSe2 films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1630-1632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Drastic changes in average molecularities (m=Cu/In) from m(very-much-greater-than)1 to m=0.92–0.93 and in hole concentrations from p(very-much-greater-than)1019 cm−3 to as low as p=7.5×1016 cm−3 have been observed in molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high hole concentrations and Cu-excess compositions of the as-grown films were attributed to the Cu–Se phase. On the other hand, well-defined photoluminescence emissions were found characteristic of intrinsic CuInSe2. The presence of the Cu–Se phase made possible the growth of high-quality CuInSe2 epitaxial films at a temperature well below the melting point of any Cu–Se compound. Surface topology measurements showed that the surface of the as-grown films was not fully covered by Cu–Se grains, leaving holes with depths of 200–300 nm after KCN etching. The enhanced two-dimensional growth and the reduced defect concentration imply that a very thin Cu-excess surface layer controls the growth of CuInSe2 when grown under Cu-excess conditions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123639
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of the composition of strained tetragonal epilayers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 761-763 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elasticity theory is applied to calculate the total strain present in a tetragonal symmetry epilayer due to heteroepitaxial misfit. By relating pseudobinary alloy composition to the lattice constants of the epilayer, it is shown that the composition of a pseudobinary epilayer can be determined from measurement of the strained epilayer lattice constants. This is accomplished by expressing the misfit strain in terms of the composition and the individual lattice constants of the components of the epilayer and using Vegard's rule. As a result, determination of the composition of two chalcopyrite symmetry epilayers from x-ray diffraction measurements is demonstrated. The approach presented here is general and can be applied to any substrate-epilayer combination in the elastic limit. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117883
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