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  • 1
    Electronic Resource
    Electronic Resource
    Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1251-1253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of Zn in the base region of GaAs-AlGaAs heterojunction bipolar transistor structures during growth by organometallic vapor phase epitaxy has been examined with respect to the presence of Si doping in the emitter-contact, emitter, and collector/subcollector layers, and as a function of Zn doping concentration and Si counterdoping level in the p+ base. For a growth temperature of 675 °C the Zn shows no significant redistribution up to concentrations of 3×1019 cm−3 without Si doping. The addition of Si to the adjacent AlGaAs emitter and collector/subcollector layers causes substantial diffusion of Zn from the base, while Si doping of the GaAs emitter contact results in even greater Zn redistribution. Under these conditions, the Zn concentration in the base attains a maximum value of ∼7×1018 cm−3. Silicon counterdoping in the base region retards the Zn diffusion, while strain introduced by an InGaAs cap layer has no effect on the Zn redistribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102528
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  • 2
    Electronic Resource
    Electronic Resource
    Pt/Ti ohmic contacts to ultrahigh carbon-doped p-GaAs formed by rapid thermal processing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1028-1030 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Increasing the concentration of the carbon dopants in p-GaAs layers grown on semi-insulating substrates to levels of 1×1020 to 5×1020 cm−3 enables the formation of an ohmic contact with low resistance using the refractory Pt/Ti metallization. These contacts showed ohmic behavior prior to any heat treatment with specific contact resistance as low as 7×10−6 Ω cm2 (0.08 Ω mm) for the lower doping level and 8×10−7 Ω cm2 (0.04 Ω mm) for the higher level. Small improvements in the specific resistance of the former contact were achieved by rapid thermal processing at a temperature of 450 °C for 30 s, which yielded a value of 4.9×10−6 Ω cm2. The electrical nature of the contact to the heavily doped GaAs was not affected by heat treatments at temperatures up to 450 °C. Rapid thermal processing of these contacts at higher temperatures, however, caused an increase in the contact resistance which was correlated to the expanded Ti/GaAs and Pt/GaAs interfacial reactions. Current-voltage characteristics were found to be temperature independent. This suggested that the field emission quantum-mechanical tunneling was the dominant carrier transport mechanism in these contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102605
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced hot-electron photoluminescence from heavily carbon-doped GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1154-1156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An enhancement of hot-electron photoluminescence due to degenerate conditions in the valence band has been observed in metalorganic molecular beam epitaxial grown GaAs:C with net acceptor concentration of up to 4×1020 cm−3. The photoluminescence (PL) was studied as a function of free-carrier concentration and sample temperature. Comparison of the PL spectra from the heavily doped GaAs to that of undoped material shows a peak shift to lower energy coupled with a greatly enhanced high-energy tail extending into the visible region of the spectrum. At 300 K, luminescence at 1.8 eV is observed at 20% the intensity of the peak luminescence at 1.36 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102548
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  • 4
    Electronic Resource
    Electronic Resource
    Carbon implantation in InGaAs and AlInAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown for the first time that carbon behaves predominantly as an acceptor in InGaAs and AlInAs under co-implantation conditions. The co-implanted ion, regardless of species, acts to create vacant lattice sites for occupation by the carbon. Implantation of 40 keV carbon ions alone at doses between 5×1012 and 5×1014 cm−2 followed by annealing in the range 600–950 °C for 10 s does not produce any measurable electrical activity in either material. In InGaAs, carbon implantation at 5×1014 cm−2 produced net acceptor activations of 20, 11, or 6% for Ga, Ar, or As co-implantation, respectively, at the same doses after 700 °C, 10 s anneals. Similar results were obtained for AlInAs after annealing at 900 °C. The diffusion coefficient for carbon is estimated from secondary-ion mass spectrometry measurements to be less than 3.3×10−14 cm2 s−1 at 800 °C in both materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102531
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  • 5
    Electronic Resource
    Electronic Resource
    Improved performance of quantum well infrared photodetectors using random scattering optical coupling (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 960-962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that a random scattering reflector on top of a quantum well infrared photodetector increases the optical coupling (i.e., increases the infrared absorption, responsivity, and detectivity) by an order of magnitude compared with a one-dimensional grating or 45° angle of incidence geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110973
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  • 6
    Electronic Resource
    Electronic Resource
    Dry patterning of InGaN and InAlN (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3643-3645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dry etch rates of InxGa1−xN and InxAl1−xN alloys are found to increase with In mole fraction in CH4/H2 microwave (2.45 GHz) discharges, and to decrease under the same conditions in Cl2/H2 mixtures. Both plasma chemistries produce smooth anisotropic etching across the entire composition range from InN to either GaN or AlN. Addition of SF6, rather than H2, to a Cl2 discharge produces faster etch rates and retains smooth morphologies. This suggests that either atomic hydrogen or fluorine is capable of effective removal of N from the III-V nitride materials. Ar+ ion milling rates for InGaAlN alloys are found to be approximately a factor of 2 lower than for more conventional III-V semiconductors like GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111230
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  • 7
    Electronic Resource
    Electronic Resource
    Low resistance ohmic contacts on nitrogen ion bombarded InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2165-2167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed Ti/Pt/Au contacts deposited in situ onto nitrogen ion bombarded n-type InP show contact resistivities as low as 3.4×10−6 Ω cm2. Acceleration voltages of 100–300 V and exposure times of 3–11 min were used to remove InP native oxide and produce a shallow (≤300 A(ring)) disordered donor layer on which ohmic contacts were deposited. Electron diffraction patterns matching those of polycrystalline InN were identified in this degenerately doped surface layer, which was further characterized by secondary ion mass spectrometry and ion channeling. Similar layers produced by Ar ion bombardment under the same conditions showed much higher contact resistivities (∼10−4 Ω cm2), indicating that the InN formation is beneficial for contact properties. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112750
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  • 8
    Electronic Resource
    Electronic Resource
    Carbon-doped impurity induced layer disorder 0.98 μm lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 590-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high power carbon-doped InGaAs/AlGaAs lasers using an impurity-induced layer disordering process to define the active region. The advantage of carbon doping is that it exhibits significantly lower diffusivity compared to other p-type dopants, thereby avoiding displacement of the p-n junction, even at the high temperatures and long diffusion times required by the disordering process. Secondary ion mass spectrometry (SIMS) measurements before and after Si diffusion show the p-n junction position to be unchanged during processing. The carbon was introduced using CCl4 as an extrinsic precursor, giving improved control over doping levels and ternary growth conditions that is not available with intrinsic carbon doping. Thresholds of 20 mA and slope efficiencies of 0.44 mW/mA at 25 °C were obtained for lasers with cavity lengths of 500 μm and coated facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357048
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  • 9
    Electronic Resource
    Electronic Resource
    The influence of hydrogen plasma treatment and proton implantation of electrical properties of AlGaAsSb (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3510-3515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogen plasma treatment and 300 keV proton implantation on the electrical properties of AlGaAsSb layers matched to GaSb are studied. It is shown that the hydrogen introduced from a plasma can form electrically neutral complexes with donors and acceptors in this material system. The results can be explained under the assumption that the hydrogen has an acceptor and a donor level in AlGaAsSb and an estimate of the depth of these levels as a function of composition is made. It is also shown that after heavy irradiation of AlGaAsSb with protons the material becomes p type with the hole concentration of about 1016 cm−3, independent of the initial doping level in the starting material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352956
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  • 10
    Electronic Resource
    Electronic Resource
    Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4989-4994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a detailed study of two-dimensional grating coupling for quantum well infrared photodetectors in the very long wavelength spectral region λ∼16–17 μm. Using calculations based on the modal expansion method we quantitatively explain the double peaked responsivity spectrum. By optimizing the grating parameters we achieve a normal incidence responsivity and detectivity which are three times larger than the 45° angle of incidence geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357209
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