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  • 1
    Electronic Resource
    Electronic Resource
    Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 540-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal "square'' In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360862
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  • 2
    Electronic Resource
    Electronic Resource
    Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2230-2232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocurrent spectra of InxGa1−xAs/GaAs multiple quantum well structures grown by molecular beam epitaxy are studied in the presence of electric fields perpendicular to the heterointerface. Several Δn=0 allowed and Δn≠0 forbidden excitonic transitions are observed. Both negative and positive shifts of exciton transitions are found. Good agreement is found between the photocurrent observations and calculations using a multiband effective-mass approach, taking into account the strain-induced splitting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101132
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  • 3
    Electronic Resource
    Electronic Resource
    Parametric study of AlAs/GaAs superlattice double-barrier diodes (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 207-209 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum well diodes with barriers formed by thin, short-period binary AlAs/GaAs superlattices were fabricated and found to have very high peak-to-valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100132
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  • 4
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 121-123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a "two-step'' spacer layer incorporated in the devices studied which facilitated the growth of high material quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98588
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4765-4767 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical barrier height measurements on n+-GaAs–insulator–n-GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔEC) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔEC defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔEC defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341194
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  • 6
    Electronic Resource
    Electronic Resource
    THE ELECTROCARDIOGRAPHS ST SEGMENT IN PREGNANCY (1966)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 73 (1966), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1966.tb06125.x
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  • 7
    Electronic Resource
    Electronic Resource
    Osmotic stress and abscisic acid reduce cytosolic calcium activities in roots of Arabidopsis thaliana (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 19 (1996), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Cytosolic Ca2+· ([Ca2+]i, and elongation growth were measured in the roots of Arabidopsis thaliana. Exposure of plant tissues to high NaCl and abscisic acid (ABA) concentrations results in a reduction in the rate of growth, but the mechanism by which growth is inhibited is not understood. Both NaCl and ABA treatments are known to influence [Ca2+]i, and in this study we measured the effects of salinity and ABA on [Ca2+]i in cells from the meristematic region of Arabidopsis roots. The Ca2+-sensitive dye Fura-2 and ratiometric techniques were used to measure [Ca2+]i in cells of the root meristem region. Resting [Ca2+]i was found to be between 100 and 200 μmol m−3 in roots of untreated plants. Resting [Ca2+]i changed in response to changes in the [Ca2+] surrounding growing roots. An increase of external [Ca2+] increased [Ca2+]i; conversely, a decrease of external [Ca2+] decreased [Ca2+]i. Exposure of roots to NaCl caused a rapid reduction of [Ca2+]i, a response that was proportional to the external NaCl concentration. Thus, as the NaCl concentration was increased, [Ca2+]i in root meristematic cells decreased. Root elongation was also inhibited in proportion to the external NaCl concentration, with maximal inhibition occurring at 120 mol m−3 NaCl. The [Ca2+]i of root meristem cells also changed in response to ABA, and the magnitude of the effect of ABA was dependent upon ABA concentration. Treatment with 0.2 mmol m−3 ABA caused a momentary increase in [Ca2+]i followed by a decrease after 15 min, but 10 mmol m−3 ABA caused an immediate decline in [Ca2+]i. There was a strong positive correlation between [Ca2+]i and root elongation rates. Experiments with the ABA-deficient Arabidopsis mutant aba-3 indicated that the reduction in [Ca2+]i brought about by NaCl was unlikely to be mediated via changes in endogenous ABA. Experiments with solutes such as sorbitol, KCl and NaNO3 indicated that the effects of NaCl could be mimicked by other solutes and was not specific for NaCl.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1996.tb00007.x
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  • 8
    Electronic Resource
    Electronic Resource
    Lymphatics of the Skin (1986)
    Oxford, UK : Blackwell Publishing Ltd
    International journal of dermatology 25 (1986), S. 0 
    Details
    ISSN: 1365-4632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-4362.1986.tb03443.x
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  • 9
    Electronic Resource
    Electronic Resource
    THE EFFECT OF SPECIMEN SIZE ON THE CTOD R-CURVE BEHAVIOUR OF A TITANIUM ALLOY (1989)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 12 (1989), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— —This paper presents preliminary results from a large experimental programme to study geometry and size effects in CTOD R-curves. The results presented were obtained from unloading compliance R-curve tests performed at room temperature on different sized single-edge-notch bend specimens made from Ti–3Al–2V alloy. The crack growth resistance was measured in terms of both the conventional CTOD, δ0, (i.e. as defined in BS 5762) and CTOD corrected for crack growth, δR. It was found that the δ0 and δR R-curves were independent of specimen size up to crack extensions corresponding to approximately 10–15% of the original uncracked ligament. Also, after crack extensions of 30–40% of the initial ligament the δ0 and δR R-curves exhibited well defined upswings. The upswing in the CTOD R-curves is thought to be a result of a reduction in crack tip constraint.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1989.tb00539.x
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  • 10
    Electronic Resource
    Electronic Resource
    EXPERIMENTAL CHARACTERISATION OF DYNAMIC TENSILE AND FRACTURE TOUGHNESS PROPERTIES (1989)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 12 (1989), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— —An experimental procedure for obtaining material tensile and fracture toughness properties at rates applicable to shock loading is reported. A variant of the key curve approach to determine dynamic J-R curves is described and results are presented for a nickel aluminium bronze alloy for actuator loading rates in the range 0.75–7500 mm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1989.tb00550.x
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