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  • 1
    Digitale Medien
    Digitale Medien
    Simultaneous disordering and isolation induced by ion mixing in InGaAs/InP superlattice structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1306-1311 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The phenomenon of simultaneous compositional disordering and the formation of electrical resistive layers induced by oxygen implantation in InGaAs/InP superlattices has been investigated. The disordering characteristics have been studied as a function of implantation temperature and ion dose. It was found that implantation at elevated temperatures (referred to as the IM or ion mixing process) usually leads to much more efficient disordering compared to implantation at room temperature followed by annealing at the same elevated temperature (referred to as the implantation plus annealing process). Of particular interest is the observation that ion mixing at 550 °C with 1×1013 O+/cm2 leads to significantly more disordering than implantation with the same dose at room temperature followed by annealing at 550 °C for the same period of ion mixing time. In addition, the electrical resistance of the ion-mixed layer at 550 °C increases 2600 times for the p-type InGaAs/InP superlattice structure, whereas the sample implanted at room temperature and annealed at 550 °C showed only a 20 times increase in electrical resistance. These results indicate a distinct advantage for the IM process in achieving simultaneous compositional disordering and electrical isolation for optoelectronic applications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351737
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  • 2
    Digitale Medien
    Digitale Medien
    Solid phase epitaxy of stressed and stress-relaxed Ge-Si alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1768-1773 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Solid phase epitaxy of 3500-A(ring)-thick GexSi1−x (0.04≤x≤0.12) films on (100) Si substrates has been investigated. The thickness of regrown layers increased linearly with annealing time in the temperature range of 475–575 °C. The regrowth rates of stressed alloys were less than those of pure Si, while stress-relaxed alloys have larger rates than Si. The difference in regrowth rates was explained by the activation-strain tensor model (Aziz, Sabin, and Lu, to be published in Phys. Rev. B). The first element of the activation-strain tensor obtained in this experiment was in excellent agreement with that deduced by Aziz et al. For low Ge concentrations (x〈0.08), the recrystallized region was of good crystalline quality. However, threading dislocations were observed in a stressed Ge0.1Si0.9 alloy after complete recrystallization. During the regrowth at 550 °C, the Ge-Si alloy first regrew coherently up to 300 A(ring), above which threading dislocations started to nucleate. On the other hand, no dislocations were detected in the regrown layer of a stress-relaxed Ge0.1Si0.9 alloy sample.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351212
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  • 3
    Digitale Medien
    Digitale Medien
    The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3124-3129 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs has been investigated. This contact scheme has been shown to form planar contact interfaces with contact resistivities less than 1 × 10−6 Ω cm2. This investigation demonstrates that the contact resistivity can be modeled by a sum of two components in series: (i) a contact resistivity due to the metal-GaAs interface and (ii) a contact resistivity due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate. For degenerately doped samples (4.5 × 1019 cm−3), the contact resistivity is nearly independent of the temperature from 300 to about 30 K, indicating that the dominant resistivity is that across the metal-semiconductor tunneling barrier. For samples with lower doping concentrations (≤ 1.5 × 1018 cm−3), the contact resistivity increases with decreasing temperature, suggesting the dominance of the contact resistivity due to the high-low junction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348579
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  • 4
    Digitale Medien
    Digitale Medien
    Nonspiking ohmic contact to p-GaAs by solid-phase regrowth (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5714-5718 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A low-resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p-GaAs is formed by solid-phase regrowth. Backside secondary-ion mass spectrometry and cross-sectional transmission electron microscopy show an initial reaction between Ni and GaAs to form NixGaAs which is later decomposed to form NiSi by reacting with the Si overlayer. This reaction leads to the solid-phase epitaxial regrowth of a p+ -GaAs layer doped with Mg. The total consumption of substrate is limited to a few hundred angstroms. The as-formed ohmic contact structure is uniform and planar with an average specific contact resistivity of ∼7×10−7 Ω cm2 on substrates doped to 8×1018 cm−3. The thermal stability of this contact scheme is also reported.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346990
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  • 5
    Digitale Medien
    Digitale Medien
    Ion mixing of III-V compound semiconductor layered structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2602-2610 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions (∼1015/cm2) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351079
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  • 6
    Digitale Medien
    Digitale Medien
    An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4364-4372 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Pd-In-Ge nonspiking Ohmic contact to n-GaAs has been investigated using the transmission line, the Kelvin, and the Cox and Strack structures. It has been found that a layered structure of Pd/In/Pd/n-GaAs with 10–20 A(ring) of Ge imbedded in the Pd layer adjacent to the GaAs can lead to a hybrid contact. When the Ohmic formation temperature is above 550 °C, a layer of InxGa1−xAs doped with Ge is formed between the GaAs structure and the metallization. When the Ohmic formation temperature is below 550 °C, a regrown layer of GaAs also doped with Ge is formed at the metallization/GaAs interface. The contact resistivity of 2–3×10−7 Ω cm2 for this contact structure is nearly independent of the contact area from 900 to 0.2 μm2. Low-temperature Ohmic characteristics and thermal stability are also examined.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348360
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  • 7
    Digitale Medien
    Digitale Medien
    Ta-based interface ohmic contacts to AlGaN/GaN heterostructures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5543-5546 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Al/Ti based metallization is commonly used for ohmic contacts to n-GaN and related compounds. We have previously reported an ohmic contact scheme specially designed for AlGaN/GaN heterostructure field-effect transistors (HFETs) [D. Qiao et al., Appl. Phys. Lett. 74, 2652 (1999)]. This scheme, referred to as the "advancing interface" contact, takes advantage of the interfacial reactions between the metal layers and the AlGaN barrier layer in the HFET structure. These reactions consume a portion of the barrier, thus facilitating carrier tunneling from the source/drain regions to the channel region. The advancing interface approach has led to consistently low contact resistance on Al0.25Ga0.75N/GaN HFETs. There are two drawbacks of the Al/Ti based advancing interface scheme, (i) it requires a capping layer for the ohmic formation annealing since Ti is too reactive and is easily oxidized when annealing is performed in pure N2 or even in forming gas, and (ii) the atomic number of Al and that of Ti are too low to yield efficient backscattered electron emission for e-beam lithographic alignment purposes. In this work, we investigated a Ta based advancing interface contact scheme for the HFET structures. We found that the presence of Ta in this ohmic scheme leads to (1) a specific contact resistivity as low as 5×10−7 Ω cm2, (2) efficient electron emission for e-beam lithographic alignment, and (3) elimination of the capping layer for the ohmic annealing. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1365431
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  • 8
    Digitale Medien
    Digitale Medien
    Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 801-804 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The dependence of the Schottky barrier height of Ni/AlxGa1−xN contact on the Al mole fraction up to x=0.23 was studied. The barrier heights were measured by I–V, capacitance–voltage, and the internal photoemission method. The Al mole fractions were estimated from the AlGaN band gap energies measured by photoluminescence. In the range of x〈0.2 a linear relationship between the barrier height and Al mole fraction was obtained. This was consistent with the slope predicted by the Schottky rule. For x=0.23, the measured barrier height was lower than predicted. We believed this was due to crystalline defects at the Ni/AlGaN interface. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371944
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  • 9
    Digitale Medien
    Digitale Medien
    Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2696-2699 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A photoconductance method was used to determine the band-gap energy and, therefore, the Al mole fraction of bulk AlxGa1−xN and AlxGa1−xN/GaN heterostructures. The results are compared with those obtained by a more elaborate photoluminescence method. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371113
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  • 10
    Digitale Medien
    Digitale Medien
    Raman spectroscopy and x-ray diffraction studies of (Ti,Al)N films deposited by filtered cathodic vacuum arc at room temperature (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6192-6197 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: (Ti,Al)N films were deposited by an off-plane double bend filtered cathodic vacuum arc technique in N2 ambient at room temperature. X-ray diffraction (XRD) and Raman spectroscopy were used to characterize the film structure. The influence of deposition pressure and the substrate bias on the XRD patterns and Raman spectra were systematically studied. As deposition pressure is increased, the film structure evolves from metallic, to metal rich (Ti,Al)2N, and finally to a single face-centered cubic (Ti,Al)N. As substrate bias is increased, the structure evolves from amorphous to crystalline (Ti,Al)N for bias at 200 V. Further increase of substrate bias results in the decrease of the crystalline size and increase of disorder phase. Four peaks at 238, 326, 442, and 679 cm−1, arisen from the transverse acoustic, longitudinal acoustic, transverse acoustic optical, and longitudinal acoustic modes of (Ti,Al)N phase, respectively, can be observed in the Raman spectra. The variation of the Raman spectra with the deposition pressure and substrate bias are in good agreement with that of the XRD measurements. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1352564
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