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  • 1
    Electronic Resource
    Electronic Resource
    Growth of ceramic thin films on Si(100) using an in situ laser deposition technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8358-8362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the formation of MgO and yttria-stabilized ZrO2(YSZ) thin films on Si(100) substrates using laser (wavelength 248 nm pulse duration 40 ns, and repetition rate 5 Hz) physical vapor deposition method. The films were deposited from solid targets of MgO and polycrystalline YSZ in appropriate ambient with the substrate temperature optimized at 650 °C. The absorption coefficient in the MgO target was enhanced by Ni doping. The films were characterized using scanning and transmission electron microscopy (plan and cross section), x-ray diffraction, and Rutherford-backscattering spectrometry. The films were found to be polycrystalline with a texture. The thin films of MgO exhibited 〈111〉 texture, while the YSZ films contained both 〈111〉 and 〈200〉 textures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347398
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  • 2
    Electronic Resource
    Electronic Resource
    Superconductor GdBa2Cu3O7−δ edge junctions with lattice-matched Y0.6Pr0.4Ba2Cu3O7−δ barriers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2871-2873 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature-superconductor Josephson junctions with an edge geometry of superconductor/normal-metal/superconductor have been fabricated on yttria-stabilized zirconia substrates by engineering the electrode and N-layer material to reduce the lattice mismatches (a, b, and c). With GdBa2Cu3O7−δ as electrodes and Pr-doped Y0.6Pr0.4Ba2Cu3O7−δ as a barrier, the lattice mismatches from electrode and barrier layer are reduced to a very low level. The junctions fabricated with such a design demonstrate resistively shunted junction current-voltage characteristics under dc bias at temperatures in the range of 77–88 K. The quite low specific interface resistivity on the order of 10−10 Ω cm2 indicates that the junction performance is controlled by the normal-metal (N) layer material instead of the interfaces. The use of lattice-matched electrode and N-layer material is one of the key design rules to obtain controllable high-temperature superconductor Josephson junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360094
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of processing geometry in oxygen incorporation and in situ formation of YBa2Cu3O7 superconducting thin films by pulsed laser evaporation technique (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2351-2353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ formation of YBa2 Cu3 O7 superconducting thin films by the pulsed laser evaporation technique is critically dependent on the processing conditions (substrate temperature, oxygen partial pressure, subsequent annealing, etc.) and on the deposition setup, including the nozzle geometry required for the incorporation of oxygen. We have studied the recovery of the superconducting properties as a function of location of the oxygen jet relative to a fixed substrate-target setup at a substrate temperature of 550 °C and an oxygen partial pressure of 200 mTorr. Several experiments were performed with the oxygen jet directed on the target and/or on the substrate. During the deposition process, a dc bias voltage of +300 V was applied on an interposing ring, which has resulted in formation of superconducting thin films at a low temperature of 500 °C. Excellent superconducting properties with the Tc zero of 88 K were obtained on films fabricated at 550 °C with the nozzle directed onto the substrate. In contrast, films formed with the oxygen jet directed at the target showed poor superconducting properties, with a Tc0 of approximately 50 K. The x-ray diffraction studies on these films showed much sharper Bragg peaks and higher oxygen content for films fabricated with the oxygen jet directed on the substrate compared to that of the target.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102364
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  • 4
    Electronic Resource
    Electronic Resource
    In situ single chamber laser processing of YBa2Cu3O7−δ superconducting thin films on Si (100) with yttria-stabilized zirconia buffer layers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1578-1580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ pulsed excimer laser processing of high Tc YBa2Cu3O7−δ films on Si (100) substrates with yttria-stabilized zirconia (YSZ) buffer layers, has been carried out for the first time using a multitarget deposition system. Both YSZ and YBa2Cu3O7−δ layers were deposited sequentially using a KrF excimer laser (λ=248 nm) at substrate temperature of 650 °C. The morphology and structure of the buffer layers and YBa2Cu3O7−δ films were determined using x-ray diffraction and transmission electron microscopy techniques. The superconducting transition temperature Tc (onset) of 90 K and Tc0 (zero resistance) of 82 K were achieved for YBa2Cu3O7−δ thin films on Si with YSZ buffer layers. An interesting result of this study was that good quality, highly textured YBa2Cu3O7−δ films with the c axis perpendicular to the substrate could be grown on single crystal as well as polycrystalline textured YSZ layers deposited on silicon substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103358
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  • 5
    Electronic Resource
    Electronic Resource
    High current YBa2Cu3O7−δ thick films on flexible nickel substrates with textured buffer layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1961-1963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High current YBa2Cu3O7−δ (YBCO) thick films on flexible nickel substrates with textured buffer layers were fabricated. Highly textured yttria-stabilized-zirconia buffer layers were deposited by using ion beam assisted deposition (IBAD). Pulsed laser deposited YBCO films were not only c-axis oriented with respect to the film surface but also strongly in-plane textured. The in-plane mosaic spread of YBCO films was ∼10°. A critical current density of 8×105 A/cm2 was obtained at 75 K and zero field for thin YBCO films. It was also demonstrated that thick YBCO films with a high critical current and excellent magnetic field dependence at liquid nitrogen temperature can be obtained on flexible nickel substrates by using the textured buffer layers. The result indicates that thick film technology in combination with IBAD buffer layers could be a viable method for fabricating YBCO tapes in long lengths. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112830
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 30-32 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high-quality 〈00l〉 textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si by interposing 〈00l〉 textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 ns). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9×10−4 Torr) at 775 °C on (001)Si substrate having 〈001〉 YSZ//〈001〉Si texture. The YBCO thin films were deposited in situ in oxygen ambient (200 mTorr) at 650 °C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530 °C and 0.4–0.6 Torr, respectively. The laser fluence to deposit this multistructure was 2.5–5 J/cm2. The 〈00l〉 textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2, and a coercive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109740
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  • 7
    Electronic Resource
    Electronic Resource
    High-temperature superconductor Josephson junctions with a gradient Pr-doped Y1−xPrxBa2Cu3O7−δ (x=0.1, 0.3, 0.5) as barriers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2866-2868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconductor YBa2Cu3O7−δ based superconducting-normal-superconducting (SNS) Josephson junctions were fabricated using a unique device design. The normal material included a gradient Pr-doped Y1−xPrxBa2Cu3O7−δ layer which was composed of a light doping (x=0.1) next to both YBa2Cu3O7−δ electrodes, a slightly higher doping (x=0.3) towards the center, and a doping concentration of x=0.5 in the middle of the N layer. This design graded the lattice mismatch between YBa2Cu3O7−δ and the N layer, thus avoiding the accumulation of all the lattice strain at one interface. It also results in good chemical, thermal, and structural compatibility between adjacent layers for the desired multilayer structures. The SNS junctions fabricated in this way showed resistively shunted junction current-voltage characteristics under dc bias and Shapiro steps under microwave irradiation at a temperature in the range of 75–87 K. Direct current superconducting quantum interference devices showed a voltage modulation about 5 μV by a magnetic field at liquid nitrogen temperature. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112518
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  • 8
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition and characterization of epitaxial Cu/TiN/Si(100) heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2565-2567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-dimensional epitaxial Cu/TiN/Si(100) heterostructures have been grown by pulsed laser deposition using a single chamber, in situ processing method. The epitaxial TiN layers on Si(100) were grown at 600 °C and epitaxial Cu layers on TiN/Si(100) in the temperature range 200–600 °C using optimized laser parameters. These structures were characterized using three-axis x-ray diffraction (aitch-theta, Φ, Ψ scans) technique and high-resolution transmission electron microscopy. The results clearly indicate cube-on-cube epitaxial alignment along the three axes, i.e., 〈100〉Cu(parallel)〈100〉TiN(parallel)〈100〉Si. The Cu/TiN and TiN/Si interfaces were found to be quite sharp without any indication of interfacial reaction. The growth mechanism of copper on TiN was found to be three dimensional, with the size of island varying from 0.3 to 1.5 μm. We discuss domain matching epitaxy as a mechanism of growth in these large lattice mismatch systems, where three lattice constants of Si(5.43 A(ring)) match with four of TiN(4.24 A(ring)) and seven units of Cu(3.62 A(ring)) match with six of the TiN. The implications of these results in the fabrication of advanced microelectronic devices are discussed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112994
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial YBa2Cu3O7−δ thin films on SrRuO3/Pt/MgO (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YBa2Cu3O7−δ (YBCO) thin films were deposited on (100) MgO using platinum and SrRuO3 (SRO) buffer layers by pulsed laser deposition. The films were (001) textured normal to substrate surface with a high degree of in-plane orientation with respect to the substrate's major axes. YBCO films showed superconducting transition temperature (Tco) at 91 K and critical current densities were found to be 2–3×106 A/cm2 at 77 K and zero field. An ion beam minimum channeling yield of 16% was obtained for YBCO films, indicating high crystallinity. The orientation relationship for this epitaxial multilayer structure was found to be (100) YBCO(parallel)(100) SRO(parallel)(100)Pt(parallel)(100) MgO. This result showed that high-quality superconducting thin films can be deposited on metal with an appropriate buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111965
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  • 10
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of Ba0.5Sr0.5TiO3 thin films with conductive SrRuO3 bottom electrodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2197-2199 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Ba0.5Sr0.5TiO3 (BST) thin films were deposited on LaAlO3 substrates with the conductive metallic oxide SrRuO3 (SRO) as a bottom electrode by pulsed laser deposition. The BST and SRO films were (h00) and (00l) oriented normal to the substrate surface, respectively. The epitaxial nature of both BST and SRO layers was determined by the measurement of in-plane orientation with respect to the major axes of the substrate. Ion beam channeling with a minimum yield of around 10% from Rutherford backscattering spectrometry demonstrated the films to be of high crystallinity. A dielectric constant around 500 and dielectric loss less than 0.01 at a frequency of 10 kHz were measured on the capacitors with a configuration of Ag/BST/SRO. Electrical measurements on such epitaxial BST films showed a breakdown voltage above 106 V/cm and a leakage current density of less than 5×10−8 A/cm at a field intensity of 2×105 V/cm. These results prove the BST/SRO heterostructure to be a good combination for microelectronic device applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113945
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