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  • 1
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence of undoped InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4249-4251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5×1015 cm−3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 μs, and surface recombination velocities were fund to be on the order of 103 cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient ≥5.9×10−11 cm3/s at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355962
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  • 2
    Electronic Resource
    Electronic Resource
    Annealing of irradiated epitaxial InP solar cells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4315-4321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of electron, proton, and alpha particle irradiated, epitaxial n+p InP solar cells has been characterized using several techniques. Current–voltage measurements were made under simulated 1 sun, AM0 solar illumination and in the dark. The radiation-induced defect spectra were monitored using deep level transient spectroscopy and the base carrier concentration profiles were determined through capacitance–voltage measurements. The irradiated cells were annealed at temperatures ranging from 300 up to 500 K. Some cells were annealed while under illumination at short circuit while others were annealed in the dark. These experiments produced essentially the same results independent of illumination and independent of the irradiating particle. An annealing stage was observed between 400 and 500 K, in which the radiation-induced defects labeled H3 and H4 were removed and the carrier concentration recovered slightly. Concurrently there was a small reduction in the junction recombination current and a slight increase in the photovoltaic (PV) output of the cell; however, most of the radiation-induced defects did not anneal, and the overall PV recovery was very small. A full analysis of the annealing data is given, and a model for the radiation response and annealing behavior of the cells is presented. The results are compared to those reported previously for irradiated, diffused junction InP solar cells. Although the radiation-induced degradation mechanisms appear to be essentially the same in the two cell types, the recovery of the PV output is found to be quite different. This difference in cell recovery is explained in terms of the defect annealing characteristics in the individual cell types. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363380
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  • 3
    Electronic Resource
    Electronic Resource
    Degradation and annealing of electron-irradiated diffused junction InP solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7368-7375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation and annealing properties of 1 MeV electron-irradiated n+p diffused junction InP solar cells are reported in detail. The solar cells were characterized through current–voltage measurements under simulated solar illumination at 1 sun, AM0. The radiation-induced defect spectra were characterized through deep level transient spectroscopy. At fluences up to 1015 cm−2, cell degradation was primarily due to a decrease in the short-circuit current Isc which occurred during the introduction of the hole trap, H4. Most of this degradation could be removed by minority-carrier injection annealing of the H4 defect at temperatures as low as 225 K. At higher irradiation fluences, up to 1016 cm−2, cell degradation was dominated by a decrease in both the open-circuit voltage Voc and the fill factor. This degradation was caused by a large radiation-induced recombination current and by carrier removal which was associated with the introduction of the hole trap H5 and the electron traps EA, EC, and ED. Most of the effects of the recombination current and some of the carrier removal were removed by concurrent injection and thermal annealing between 373 and 400 K where the residual H4 defect concentration and the H5 defect were removed. Essentially full cell recovery was achieved after subsequent annealing between 450 and 500 K where the electron traps also showed a partial annealing stage. Thermal annealing without illumination in the range of 350–500 K showed the same defect annealing stages suggesting that the cell recovery in this temperature range is due solely to thermal annealing. The data are summarized to give a model for the radiation-induced degradation and annealing of these InP solar cells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360386
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  • 4
    Electronic Resource
    Electronic Resource
    Electron irradiation of two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2173-2176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented for 1 MeV electron-irradiated, two terminal, monolithic InP/Ga0.47In0.53As tandem solar cells. These highly efficient prototype cells show radiation resistance that is comparable to single junction InP cells. A current mismatch between the subcells does not occur until high fluence levels, that is, near 3×1015 e−/cm2. This value for the onset of current mismatch and the measured remaining absolute efficiency of 9.4% at 1×1016 e−/cm2 are excellent results reported for a tandem cell designed for space applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358795
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  • 5
    Electronic Resource
    Electronic Resource
    Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1−x/InP quantum-well solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2840-2846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of proton irradiation on strained InAsxP1−x/InP-based quantum well solar cells (QWSCs) have been investigated by the electron beam induced current (EBIC) and cathodoluminescence (CL) techniques. From analysis of the EBIC data, capture rates within the quantum well region have been estimated, from which the open circuit voltages of the cells were calculated and shown to agree well with the measured values. Diffusion lengths have been estimated from analysis of both the EBIC and CL measurements. The location of the energy levels of proton-induced defects and their effectiveness as nonradiative recombination centers have been determined from Arrhenius plots of the total CL intensity emitted from the quantum wells following irradiation. The results suggest that deeper and narrower quantum wells increase the sensitivity of QWSCs to radiation damage. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389755
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  • 6
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy study of proton irradiated p-type InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6488-6494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep level transient spectroscopy study of proton irradiation induced defects in n+p InP mesa diodes grown by metalorganic chemical vapor deposition is reported. In contrast to results reported for InP grown by other methods, 3 MeV proton irradiation produced a DLTS spectrum similar to 1 MeV electron irradiation with the addition of two new peaks. Six majority carrier peaks: HP1(Ea=0.15 eV), H2(Ea=0.20 eV), H3(Ea=0.30 eV), H4(Ea=0.37 eV), H5(Ea=0.54 eV), and H7(Ea=0.61 eV) and three minority carrier peaks: EA(Ea=0.26 eV), EB(Ea=0.74 eV), and EC(Ea=0.16 eV) were detected. The H5 peak displayed a thermally activated capture cross section and a dependence of peak height on injection level. Isothermal annealing at 375 K was performed and thermal annealing rates are presented. Low temperature (200 K), minority carrier injection annealing rates are also presented. For most of the defects, a significant residual concentration remained after injection which could not be annealed further. An equation was developed for the annealing rate of the major defect, H4, as a function of injection level, carrier concentration, and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348856
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  • 7
    Electronic Resource
    Electronic Resource
    Critical current enhancement in proton-irradiated Tl2CaBa2Cu2O8 films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1119-1121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured changes in the superconducting transition temperature Tc and critical current density Jc of epitaxial Tl2CaBa2Cu2O8 films upon exposure to 2 MeV protons. Jc was measured inductively at 4.2 and 77 K and in fields of H=0 and 0.2 T. At 77 K and H=0, Jc decreases monotonically with increasing fluence Φ. The rate of decrease is about 1.8 times greater than for YBa2Cu3O7 films, even though the rate of change of Tc with Φ is comparable. At 4.2 K, Jc is initially enhanced, even at H=0. The maximum observed increase is 34% (to 8 MA/cm2) at Φ≈1016 protons/cm2 and H=0.2 T. This enhancement is attributed to pinning of magnetic flux lines by proton-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347384
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  • 8
    Electronic Resource
    Electronic Resource
    Time dependence of radiation-induced generation currents in irradiated InGaAs photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1629-1635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduction of the E2 peak height with time, as measured by deep level transient spectroscopy. The reverse current is found to decay with a logarithmic time dependence, which can be explained by a model in which the annealing of the E2 defects is controlled by a distribution of thermal energy barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354812
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  • 9
    Electronic Resource
    Electronic Resource
    Radiation-induced reverse dark currents in In0.53Ga0.47As photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7244-7249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse dark current-voltage (dark I-V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354012
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  • 10
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy of irradiated p-type InP grown by metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1435-1439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented of a deep level transient spectroscopy study of radiation-induced defects in p-type (Zn-doped) InP grown by metalorganic chemical vapor deposition. Three major hole traps (H3, H4, and H5) and two electron traps (EA and EB) were observed. The electron trap structure in particular is significantly different from that reported in the literature for p-type InP grown by other methods. Activation energies of 0.22 eV (EA) and 0.76 eV (EB) have been measured, and capture cross sections (σ∞) of 4.4×10−15 cm2 (EA), and 1.4×10−12 cm−2 (EB) have been determined. The H5 center has a thermally activated capture cross section with an energy barrier of 0.35 eV. The measured injection annealing rate of the primary hole trap (H4) was different than previously observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347284
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