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  • 1
    Electronic Resource
    Electronic Resource
    Polish-induced damage in 〈100〉 GaAs: A comparison of transmission electron microscopy and Raman spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4363-4365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication presents a comparative study of polish-induced effects in 〈100〉 GaAs by Raman spectroscopy (strain) and cross-sectional transmission electron microscopy (dislocation density). It is found that the depth and polish-time dependence of both the strain and dislocation density obey the same relationship. However, the skin depth evaluated by Raman scattering is a factor of 10 smaller than that determined from transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344928
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  • 2
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained-layer superlattices on heteroepitaxial GaAs/Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5115-5118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study, investigating the effects of strained-layer superlattices (SLSs) on threading dislocations present in GaAs/Si heteroepitaxial layers, was conducted. Transmission electron microscope contrast analysis was performed on ∼1% lattice-mismatched GaAs0.72P0.28/GaAs SLSs grown on GaAs/Si substrates.Threading dislocations were found to have Burgers vectors inclined to the GaAs/Si interface. Individual strained layers ranging in thickness from 100 to 250 A(ring) were observed to have negligible effect on dislocation bending. Instead, dislocation bending occurred primarily at the first and last interfaces of the SLS packets. Similarly, effective dislocation bending was observed using 1000 A(ring) layers. Threading dislocation density close to the GaAs/Si heterointerface was found to depend on the SLS packet proximity to the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347049
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  • 3
    Electronic Resource
    Electronic Resource
    Solubilization and Characterization of σ-Receptors from Guinea Pig Brain Membranes (1989)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 53 (1989), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The σ-receptor, a distinct binding site in brain tissue that may mediate some of the psychotomimetic properties of benzomorphan opiates and phencyclidine, has been sol-ubilized using the ionic detergent sodium cholate. Binding assays were performed with the solubilized receptor using vacuum filtration over polyethyleneimine-treated glass fiber filters. The pharmacological specificity of the solubilized binding site for σ-receptor ligands is nearly identical to the membrane-bound form of the receptor, with the order of potencies for displacement of the selective σ-ligand [3H]di-o-tolylguanidine ([3H]DTG) closely correlated. The stereoselectivity for (+)-benzomorphan opiate enantiomers was retained by the solubilized receptor. The soluble receptor retained high affinity for binding of [3H]DTG (KD= 28 ± 0.5 nM) and (+)-[3H]3-(3-hydroxyphenyl)-N-(l-propyl)piperi-dine {(+)-[3H]3-PPP} (KD= 36 ± 2 nM). Photoaffinity labeling of the solubilized receptor by [3H]p-azido-DTG, a σ-selective photoaffinity label, resulted in labeling of a 29-kilodalton polypeptide identical in size to that labeled in intact membranes. Estimation of the Stokes radius of the [3H]DTG binding site was obtained by Sepharose CL-6B chromatography in the presence of 20 mM cholate and calculated to be 8.7 nm. This value was identical to the molecular size found for the binding sites of the σ-selective ligands (+)-[3H]3-PPP and (+)-[3H]SKF-10,047, supporting the hypothesis that all three ligands bind to the same macro-molecular complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1989.tb08554.x
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  • 4
    Electronic Resource
    Electronic Resource
    Homoepitaxial growth of GaN using molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2195-2198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363112
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  • 5
    Electronic Resource
    Electronic Resource
    Origin of n-type conductivity of low-temperature grown InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 600-602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown with correlated magnetic resonance and electrical measurements that the PIn antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the PIn antisite is resonant with the conduction band, which makes the material n-type conducting due to autoionization of the PIn antisite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357052
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  • 6
    Electronic Resource
    Electronic Resource
    Annealing dynamics of arsenic-rich GaAs formed by ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1470-1475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the annealing temperature dependence of structural and electrical properties in heavily arsenic implanted GaAs which has a similar amount of excess arsenic to low temperature GaAs (LT-GaAs). The fundamental properties of this material are quite similar to those of LT-GaAs. High resolution x-ray diffraction measurements have revealed that it has an increased lattice constant, which is reduced to the value of bulk GaAs by annealing between 300 and 400 °C. Electrical conduction in this material is dominated by hopping between deep states, which is also reduced by annealing above 350 °C. In samples annealed at temperatures ranging from 600 to 850 °C, the dominant electron trap is EL2; it has been confirmed by resistivity measurements with n-i-n structures that the Fermi level is pinned by EL2. In samples annealed below 500 °C, the dominant electron trap is not EL2 but the U-band, although electron paramagnetic resonance measurements show the existence of a large concentration of the ionized arsenic antisite defect (AsGa+). This supports the notion that the U-band is formed by AsGa defects with slightly modified carrier emission properties compared with EL2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360235
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of low-temperature AlxGa1−xAs lattice properties using high resolution x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4452-4454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high resolution x-ray diffraction techniques, we have studied the lattice parameter behavior of low-temperature (LT) AlxGa1−xAs as a function of annealing temperature and aluminum content. Similar to LT GaAs, the as-grown LT AlxGa1−xAs layers exhibit a dilated lattice constant which, upon annealing, contracts to that of "normal'' material. The onset of this contraction in LT Al0.3Ga0.7As, however, is found to occur at an annealing temperature nearly 100 °C higher than that required for LT GaAs. In addition, the relative lattice expansion in the as-grown LT layer is found to be a decreasing function of Al content, ranging from 0.099% for LT GaAs to 0.059% for LT Al0.3Ga0.7As. This is attributed to lower than expected As incorporation in the LT AlxGa1−xAs during growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359473
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  • 8
    Electronic Resource
    Electronic Resource
    Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1170-1172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs and AlGaAs grown directly on Si were characterized by transmission electron microscopy. Both GaAs and AlGaAs grow three-dimensionally on Si at 750 °C. The spacing between GaAs islands is large, while the AlGaAs islands appear to be contiguous for a nominal thickness of 22.5 nm. There is a high density of dislocations, stacking faults, and microtwins in the thin GaAs layer, but drastic reduction of such defects was observed in the planar AlGaAs nucleation layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104354
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  • 9
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2108-2110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition was characterized by transmission electron microscopy. The growth mode changes from three-dimensional to two-dimensional with increasing V/III ratio. GaP on Si grown at a low V/III ratio of 800 contains many dislocations, stacking faults, and microtwins; however, a significant reduction in the density of these defects is observed in GaP grown at high V/III ratio of 3200.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104975
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  • 10
    Electronic Resource
    Electronic Resource
    The dissociation energy and the charge state of a copper-pair center in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 474-476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal dissociation of Cu pairs was studied in p-type silicon. The dissociation energy of the Cu pair was found to be 1.02±0.07 eV, twice as high as the binding energy of a Coulombically bound donor-acceptor pair placed on nearest neighbor 〈111〉 sites. This implies that the pair is either covalently bonded, or it consists of an ionically bonded doubly negatively charged acceptor and a singly charged donor. To distinguish between these two models, the dependence of the hole emission rate on the electric field in the depletion region was studied. The absence of the Pool-Frenkel emission enhancement ruled out the acceptor nature of the center and the purely ionic type of bonding. On the other hand, the polarization potential describing emission from a neutral impurity gave a satisfactory fit to the experimental data. It is concluded that the Cu pair is a donor with either covalent or mixed type of bonding. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120790
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