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  • 1
    Digitale Medien
    Digitale Medien
    The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 973-976 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na − Nd = 4 × 1015 cm−3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349608
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  • 2
    Digitale Medien
    Digitale Medien
    Temperature dependence of photoluminescence in modulation-doped pseudomorphic high electron mobility transistor AlxGa1−xAs/ InyGa1−yAs/GaAs structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7535-7540 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the temperature-dependent characteristics of photoluminescence emission in modulation δ-doped AlxGa1−xAs/InyGa1−yAs/GaAs structures. Transition energies are analyzed using a self-consistent solution of the coupled k⋅P Hamiltonian–Poisson equation. At low temperatures, dominant emissions are due to the transitions from the first electron subband to the first heavy-hole subband and from the second electron subband to the first heavy-hole subband irrespective of the location of modulation doping. The second hole subband related transitions associated with the first electron subband or the second electron subband emerges with increasing temperature depending on the location of doping. The relative intensities of the transitions from the first and second electron subbands to the first heavy-hole subband transitions are analyzed as a function of the Fermi energy position. An excellent agreement is found between the measurements and calculations. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357985
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  • 3
    Digitale Medien
    Digitale Medien
    Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 328-331 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Conventional Hall-effect determination of the two-dimensional electron gas (2DEG) concentration n2D in pseudomorphic high electron mobility transistor structures is invalid because of interference from the highly doped GaAs cap. Furthermore, the usual methods of dealing with this cap-interference problem, namely, (1) etching off the cap totally, (2) etching the cap until the mobility reaches a maximum, or (3) growing a separate structure with a thin, depleted cap, in general, give n2D values that are too low. However, we show here that magnetic-field-dependent Hall (M-Hall) measurements can separately determine the carrier concentrations and mobilities in the cap and 2DEG regions, as verified by comparison with a self-consistent, four-band, k⋅p calculation and also by electrochemical capacitance-voltage measurements in structures with different cap and spacer thicknesses.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357148
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  • 4
    Digitale Medien
    Digitale Medien
    Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2121-2123 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thin strained superlattice (TSSL) concept is introduced as a means for extending the practical range of application for pseudomorphic Inx Ga1−x As on GaAs. Growth and characterization results are presented for pseudomorphic high electron mobility transistor structures with GaAs-In0.3 Ga0.7 As TSSL active layers grown by molecular beam epitaxy. The TSSLs are composed of three periods of GaAs(15 A(ring))- In0.3 Ga0.7 As(h2 ), where h2 ranges from 30 to 52 A(ring). Modulation doping of the TSSLs is provided by atomic planar-doped Al0.3 Ga0.7 As overlayers with 45 A(ring) undoped spacers. 77 K Hall effect and transmission electron microscopy reveal that relatively thick TSSLs can be grown with high electronic and structural quality, comparable to much thinner In0.3 Ga0.7 As single quantum wells. Results are compared with a model for critical layer thickness and discussed in light of in situ reflection high-energy electron diffraction measurements.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101146
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  • 5
    Digitale Medien
    Digitale Medien
    Deep-level photoluminescence spectroscopy of CdTe grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2670-2671 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the observation of a broad photoluminescence line at 0.75 eV in CdTe grown by molecular-beam epitaxy at both high- and low-substrate temperatures. This line is in excellent agreement with the E2 line observed by deep-level transient spectroscopy by previous workers. The origin of both of these lines is probably a deep defect or impurity level native to CdTe.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337898
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  • 6
    Digitale Medien
    Digitale Medien
    Silicon autocompensation in GaAs grown by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3571-3573 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic study has been made of silicon dopant compensation in GaAs grown by molecular-beam epitaxy. The compensation ratio is derived from Hall measurements for a number of samples grown under identical conditions except for silicon dopant flux. Results are compared with low-temperature (4.2 K) photoluminescence measurements. The donor and acceptor concentrations are both related to the silicon effusion cell temperature by Arrhenius relations; however, each is fitted with a different activation energy. This leads to increasing compensation with increasing dopant flux.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336780
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  • 7
    Digitale Medien
    Digitale Medien
    Electrochemical capacitance-voltage analysis of delta-doped pseudomorphic high electron mobility transistor material (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2703-2705 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This work shows how electrochemical capacitance-voltage (EC-V) measurements can be used to evaluate delta-doped pseudomorphic high electron mobility transistor material. These EC-V measurements are compared with magnetic-field-dependent Hall effect (M-Hall) measurements and a self-consistent Poisson/k⋅p calculation of the band structure and electron concentration. The EC-V technique can clearly delineate the cap layer, the delta-doped layer, and the InxGa1−xAs channel layer, whereas the M-Hall method characterizes only the cap and InxGa1−xAs channel layers. The amount of electron charge seen by the EC-V and M-Hall measurements show good agreement with theory.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111471
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  • 8
    Digitale Medien
    Digitale Medien
    Temperature dependence of photoluminescence linewidth in modulation-doped pseudomorphic high electron mobility transistor AlxGa1−xAs/InyGa1−yAs/GaAs structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3263-3265 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the temperature dependent characteristics of photoluminescence linewidth in terms of two-dimensional electron gas sheet concentration for modulation δ-doped AlxGa1−xAs/InyGa1−yAs/GaAs structures. The electron concentration is obtained using a self-consistent solution of the coupled k⋅P Hamiltonian–Poisson equation. We find that only the full width at half maximum of the n=2 electron-subband-to-n=1 hole subband transition is useful for characterizing high electron density at T=2–300 K. The importance of hole localization for correlating the electron density with photoluminescence linewidth is discussed. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112431
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  • 9
    Digitale Medien
    Digitale Medien
    A high-current-gain, high-speed P-n-p AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistor (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 837-839 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A P-n-p AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistor (C-up HBT), grown by three-stage molecular beam epitaxy, has been fabricated, and its dc and high-frequency performances have been evaluated. The use of a graded InxGa1−xAs (x=0.0–0.09) is shown to improve the common-emitter current gain (β) and to greatly reduce the base transit time (τb) for the P-n-p C-up HBTs. A maximum current gain (β) of 150 was measured for a 16×17 μm2 device. From S-parameter measurements, a best unity-gain cutoff frequency fT=43 GHz at a collector current of −10 mA was achieved using a 5×10 μm2 collector area. The results show that the P-n-p C-up HBTs may be useful for future planar integrated circuit applications. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115521
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  • 10
    Digitale Medien
    Digitale Medien
    Reverse-biased performance of a molecular-beam-epitaxial-grown AlGaAs/GaAs high-power optothyristor for pulsed power-switching applications (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5225-5230 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The reverse-biased performance of a molecular-beam-epitaxy-grown high-power optothyristor has been systematically characterized for pulsed power-switching applications. The device has a P+N-SI-PN+ thyristor-like structure with the bipolar junctions formed by AlGaAs. The semi-insulating (SI) GaAs used is liquid-encapsulated-Czochralski grown, undoped, and 650 μm in thickness. It is found that the reverse-biased optothyristor can be triggered by a light-emitting diode operated at 10−5 W, and miniature semiconductor lasers can trigger the switch with 132 A current using only a 1-mm-diam optical aperture. The reverse switching di/dt and the maximum peak current are reported as a function of blocking voltage. The effects of bipolar junctions on both sides of the SI-GaAs are also reported by comparing the bulk photoconductive current with the optothyristor switched current. It is shown that a laser beam of 0.05 μJ can be used to trigger on and switch about the same current as a 0.3 μJ laser beam, suggesting the possibility of integrating miniature semiconductor lasers and the optothyristors on the same chip to form a portable, compact, high-power solid-state pulser.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354262
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