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  • 1990-1994  (9)
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  • 1
    Electronic Resource
    Electronic Resource
    Gettering of copper by bulk stacking faults and punched-out dislocations in Czochralski-grown silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4540-4546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of Cu precipitation on various types of defects associated with oxygen precipitation in Czochralski-grown silicon are investigated by transmission electron microscopy and the electron-beam-induced-current technique. Specimens containing dominantly either punched-out dislocations or bulk stacking faults were intentionally contaminated with Cu at various temperatures and cooled at three different rates. Colonies of Cu precipitates developed irrespective of cooling rate, apparently originating from punched-out dislocations developed around oxygen precipitates. In heavily contaminated specimens cooled fast from the contamination temperature, Cu also precipitates on Frank partial dislocations bounding stacking faults. During slow cooling, precipitation of Cu takes place on Frank partials only in lightly contaminated specimens but never in heavily contaminated specimens. Cu precipitates in colonies are thermally more stable than those formed on Frank partials. It is concluded that punched-out dislocations are more favorable precipitation sites for Cu than Frank partials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357285
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen effect on the optical activity of dislocations in silicon introduced at room temperature (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7882-7888 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations were introduced into silicon crystals by mechanical scratching at room temperature. The optical property of such dislocations was investigated by means of cathodoluminescence. Neither deformation-induced luminescence nor the exciton luminescence was detected in the scratched region, showing that a high density of nonradiative recombination centers is induced on or around dislocations. Hydrogen plasma treatment of a scratched crystal led to the appearance of the so-called D1–D4 luminescence lines along the scratch. Deep-level transient spectroscopy revealed that deep traps were induced by scratching and diminished drastically due to subsequent hydrogen plasma treatment. Thus, it was concluded that hydrogen passivated nonradiative recombination centers but not the luminescence centers. The characteristics in spatial distribution of D1 and D2 lines and those of D3 and D4 lines showed that these two groups of luminescence lines were of different origins. Since the specimens used were thought to be free from metal contamination, the luminescence was not related to metallic impurities incorporated in the dislocation core. The nonradiative recombination centers induced by scratching were annihilated due to annealing at temperatures higher than 500 °C. The release of hydrogen from the nonradiative centers in a hydrogenated specimen did not take place before they were annihilated by annealing. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357898
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  • 3
    Electronic Resource
    Electronic Resource
    Radiation-induced shallow donors in Czochralski-grown silicon crystals saturated with hydrogen (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7347-7350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far-infrared absorption has been investigated in n-type Czochralski-grown silicon saturated with hydrogen and then irradiated with fast electrons. Two series of absorption bands in the range 200–330 cm−1 are observed upon postirradiation annealing of the crystals at 300–550 °C. These bands are associated with ground–to–excited-state electronic transitions in two kinds of shallow donors with ionization energies of 37.0 and 42.6 meV, which are described well with the effective-mass approximation. These donors are related to defects observed earlier in electrical measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357958
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  • 4
    Electronic Resource
    Electronic Resource
    Excitation spectra of 1200 and 1320 nm photoluminescence lines in annealed gallium arsenide doped with silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1164-1168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitation spectra have been measured at various temperatures for the intense luminescence lines at 1200 and 1320 nm which are observed in samples of Si-doped GaAs annealed at 900 and 500 °C, respectively. The excitation spectra of the 1200 nm line at 6 K has a sharp peak at 1.490 eV followed by a broad background component on the lower-energy side. This peak corresponds to the electronic excitation of donor (Si at Ga atom site) -acceptor (Si at As atom site) pairs in the crystal. The excitation spectra of the 1320 nm line at 6 K shows two peaks at 1.49 and 1.39 eV. The experimental results show clearly that the creation of donor-acceptor pairs in the above Si impurity complex is the major process of electronic excitation which leads to the intense luminescence at longer wavelengths such as 1200 and 1320 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357840
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of heat treatment on the state of Si impurity in GaAs studied with the photoluminescence technique (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3035-3040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatment of Si-doped GaAs was investigated with photoluminescence (PL) measurement. The dependence of PL spectra on the carrier concentration due to Si shows that the PL lines in the wavelength range between 950 and 1500 nm are classified into two types depending on whether the carrier concentration is lower or higher than approximately 7×1017 cm−3. There is also a similar behavior for PL spectra in the bound exciton wavelength region between 800 and 950 nm. The characteristic carrier concentration is about 6×1017 cm−3, and is related to the onset of overlap between wavefunctions of excitons bound to Si impurity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353010
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  • 6
    Electronic Resource
    Electronic Resource
    Optical studies of heat-treated Si-doped GaAs bulk crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1618-1624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatments on optical properties of Si-doped GaAs was investigated. Special care was taken to avoid the evaporation of As during heat treatment. Several kinds of photoluminescence peaks were found to be developed, depending on the Si concentration of the crystal and the temperature of the heat treatment. In crystals of high concentrations of Si a broad photoluminescence peak centered at about 1040 nm in wavelength was observed. The intensity and position of the peak were found to depend on the temperature of the heat treatment for a crystal in which the Si concentration was higher than 3.8×1018 atoms/cm3. The change in the peak position was accompanied by the changes in the optical absorptions related to SiGa-SiAs and SiAs-VGa pairs and also by the change in the concentration of free electrons. The characteristics of the observations were well interpreted with the idea that the photoluminescence peak was related to clusters of Si atoms and that clustering of Si atoms took place during heat treatment. Such clustering of Si atoms did not take place appreciably in a crystal of a Si concentration lower than 3.0×1018 atoms/cm3. The origins of other photoluminescence peaks related to shallow levels were identified, while those related to deep levels are not known at the present moment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347258
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation on higher order bands in irradiated Czochralski silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1227-1229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Fourier transform infrared absorption spectroscopy and Hall-effect measurements we have investigated the higher order bands (HOB) in the fast neutron irradiated Czochralski silicon. Introducing the thermal donors (TD) to alter the Fermi level, the defect level giving rise to the HOB is analyzed, which is proposed to be located slightly below the TD(+/++) level. Furthermore, the observation for the characteristics of the photoexcitation and decay of both the HOB and the TD+ supports the assumption that this characteristic of the HOB is associated with a slow relaxation of photoexcited carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110847
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  • 8
    Electronic Resource
    Electronic Resource
    Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals (1991)
    Springer
    Applied physics 53 (1991), S. 65-74 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 Wp ; 61.70 Yq ; 64.75.+g ; 66.30 Jt ; 66.30 Lw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323437
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  • 9
    Electronic Resource
    Electronic Resource
    Studies of divacancy in Si using positron lifetime measurement (1994)
    Springer
    Hyperfine interactions 84 (1994), S. 397-406 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The charge state dependence of positron lifetime and trapping at divacancy (V2) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×1017 e/cm2. The positron trapping cross sections for V 2 2− , V 2 − and V 2 0 at 300 K were about 6×10−14, 3×10−14 and 0.1–3×10−14 cm2, respectively. For V 2 + , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V 2 0 and V 2 2− have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V 2 0 ) and 21 meV (V 2 2− ). The appearance of a shallow level for V 2 0 can not be explained by a conventional “Rydberg state” model. The lifetime (290–300 ps) in V 2 0 is nearly constant in the temperature range from 10 to 300 K, while that in V 2 2− increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V 2 2− is shorter than that in V 2 0 at low temperature, which is due to the excess electron density in V 2 2− . At high temperature, however, the longer lifetime of V 2 2− than that of V 2 0 is attributed to lattice relaxation around V 2 2− .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02060688
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