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  • 1
    Electronic Resource
    Electronic Resource
    Light-induced dioxygen reduction at thin film electrodes of various porphyrins (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 1748-1755 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100157a049
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of processing-induced defects in high-purity InP by photoluminescence (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1080-1085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence experiments were performed on high-purity InP substrates as a function of heat treatment, flat-profile ion implantation and subsequent annealing procedures. Whereas the well resolved near band edge luminescence proved the superior substrate quality, up to 6 sharp luminescence lines (some of them not reported so far) and one shallow broad-band emission were observed after Si3N4 deposition and various annealing procedures. From the temperature dependence of the luminescence peak intensities the activation energies of the novel lines were determined and discussed in terms of excitons bound to processing-induced complex defects. These assignments are supported by the observation of a strong enhancement of the luminescence after low dose Ar+ ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351783
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  • 3
    Electronic Resource
    Electronic Resource
    Gas source molecular-beam epitaxy of Si and SiGe using Si2H6 and GeH4 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1008-1012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas source molecular-beam epitaxy (MBE) has been studied as a low-temperature Si and SiGe epitaxial method. Specular single-crystalline silicon films were successfully grown by the gas source Si MBE technique at a substrate temperature of about 650 °C. N-type doping was carried out using PH3 gas as a dopant and the maximum electron concentration of 2.9x1019cm−3 was obtained. Furthermore, p-type doping using B2H6 gas was carried out for the first time and the maximum hole concentration of 9.5×1017cm−3 was successfully achieved. The SiGe alloy layer was also grown by the gas source MBE technique using GeH4 as a Ge source gas. The Ge concentration of the sample could be precisely controlled by the molar fraction of Ge in supply and it was increased up to 0.30 with increasing the gas ratio of GeH4 to Si2H6.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347415
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  • 4
    Electronic Resource
    Electronic Resource
    Role of surface morphology in wafer bonding (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 257-260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain patterns detected by x-ray topography in wafers bonded for silicon-on-insulator (SOI) technology were found related to the flatness nonuniformity of the original wafers. Local stresses due to the bonding process are estimated to be about 1×108 dynes/cm2. The stress is reduced about 100 times for the thin (0.5 μm) SOI films. Most of the wafer deformation occurs during room temperature mating of the wafers. The deformation is purely elastic even at 1200 °C. The magnitude of the stress appears insignificant for complimentary metal-oxide-semiconductor devices performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347760
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  • 5
    Electronic Resource
    Electronic Resource
    A selective polishing approach for the fabrication of bonded-wafer silicon-on-insulator (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2993-2998 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new polishing machine has been constructed for the fabrication of bonded-wafer silicon-on-insulator (bonded-wafer SOI) through a numerically controlled polishing technique. The polishing machine is equipped with 32 small-area tools which produce the variation of polishing pressure over a wafer surface. The tools do not rotate. Instead, the wafers being polished perform an oscillatory motion. A tool removal profile which was adequate for selectively polishing one place on a wafer without affecting its neighboring areas was obtained. As a result of its test operation, the initial thickness deviation of σ=380 nm of the top Si layer of a bonded-wafer SOI sample has been improved to σ=48 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144345
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  • 6
    Electronic Resource
    Electronic Resource
    Excited-state spectroscopy of identified Mg acceptor in InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence experiments under resonant excitation have been performed at low temperature in Mg+-implanted bulk InP. The energy difference between the ground 1S3/2 and excited 2S3/2 states of the Mg acceptor is accurately measured by two-hole spectroscopy of Mg-acceptor bound exciton. Selective excitation of donor-acceptor pairs luminescence allows the identification of a set of 2P3/2 and 2P5/2 excited states. The measured values to be compared with similar published data obtained for Zn and C represent an additional step in the process of accurate identification of acceptors in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102781
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  • 7
    Electronic Resource
    Electronic Resource
    Low residual impurities assessment by photoluminescence in multistep wafer-annealed semi-insulating Czochralski-grown GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multistep wafer-annealed semi-insulating GaAs wafers (MWA) are characterized using photoluminescence (PL). The PL spectra present well-resolved near-band-edge transitions, including the doublet of the neutral acceptor-bound exciton. A detailed investigation using selective pair luminescence of samples submitted to different annealings, i.e., wafer- or ingot-annealing, single or multistep, shows that carbon is the main shallow acceptor. However, for the wafer-annealed samples, two other residual impurities found in the as-grown or ingot-annealed crystals have their estimated concentrations noticeably reduced, for Zn (e.g., around 1013 cm−3 in MWA), or are unresolved for Si. This reduction of background impurities may have direct consequences for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107679
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  • 8
    Electronic Resource
    Electronic Resource
    Electroluminescence in Li-codoped ZnS: TmF3 thin-film devices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 991-993 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Li codoping in ZnS:TmF3 thin-film electroluminescent devices are reported. ZnS:Tm, Li thin films are prepared at several Li concentrations and substrate temperatures. The electroluminescent characteristics of ZnS:Tm,Li devices depend on Li concentrations, substrate temperatures, the annealing, and drive voltages.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108510
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  • 9
    Electronic Resource
    Electronic Resource
    Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 608-610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface construction of tilt growth that is sometimes observed for epilayer growth on a lattice mismatched substrate is modeled on the basis that tilt relieves misfit strain in the epilayer. In this model off-axis misfit accommodation is assumed to be due to only tilt dislocations or tilt dislocations combined with misfit dislocations. The average interval between successive dislocations which are formed along the interface can be estimated using the lattice units of both materials and that of the epilayer in another principal axis direction; the tilt angle can also be calculated geometrically. The tilt angle predicted by this model agrees well with experimental results for several examples of mismatched epilayer growth by molecular-beam epitaxy. The model suggests a method to grow a single domain of stress-free epilayer by using a substrate cut to an angle that allows off-axis fit to the lattice unit of the epilayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385801
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  • 10
    Electronic Resource
    Electronic Resource
    Uniaxial locked epitaxy of ZnO on the a face of sapphire (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1801-1803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]||[112¯0] and 〈112¯0〉||[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to 〉0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311603
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