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  • 1
    Electronic Resource
    Electronic Resource
    Chelyabinsk. Environmental affairs in a Russian city (1993)
    s.l. : American Chemical Society
    Environmental science & technology 27 (1993), S. 596-600 
    Details
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/es00041a002
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  • 2
    Electronic Resource
    Electronic Resource
    Role of peripheral chemoreceptors in response to smoke-induced apnea vs tracheal occlusion (1985)
    Springer
    Cellular and molecular life sciences 41 (1985), S. 1130-1131 
    Details
    ISSN: 1420-9071
    Keywords: Nasal irritant receptors ; cigarette smoke ; blood pressure ; heart rate ; rabbits
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Reflex autonomic changes which occur after cigarette smoke enters the upper airways are partially due to peripheral chemoreceptor stimulation. Chemoreceptor denervation attenuates but does not abolish smoke induced bradycardia. Denervation nearly abolishes bradycardia induced by tracheal occlusion. Hypertension accompanies smoke induced apnea but does not occur during tracheal occlusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01951692
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  • 3
    Electronic Resource
    Electronic Resource
    Detection of surface (∼1 μm) impurity phases in high Tc superconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 960-962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that thermally stimulated luminescence is an important method for detecting insulating impurity phases that commonly occur in high Tc superconductors. The technique is sensitive to impurity phases at 〈1% level with a probe depth of ∼ 1 μm, which is the region of interest for many superconductor applications. Samples of Y2O3, Y2BaCuO5, YBa2Cu3O6.2, BaCO3, Ba3CuO4, BaCuO2, and YBa2Cu3Ox (x≈7) were investigated. All but the high quality sintered pellets of YBa2Cu3Ox exhibited relatively intense luminescence. The absence of luminescence, and thus of insulating phases, is correlated with low values of rf surface resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101419
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  • 4
    Electronic Resource
    Electronic Resource
    Strength of Terfenol-D (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3712-3713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strength of the magnetostrictive material, Terfenol-D, Tb0.27Dy0.73Fe2.0, has been evaluated by measuring the modulus of rupture as a function of the Fe stoichiometry of the compound. It is shown that the strength improves markedly as the Fe concentration decreases from the stoichiometric value of 2.0 in the compound. The increased strength results from the increasing volume fraction of the rare-earth metal phase produced in the Terfenol-D matrix by the solidification process at lower Fe concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342599
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of ion implantation dose on the interdiffusion of GaAs-AlGaAs interfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2087-2090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results of enhanced interdiffusion of GaAs-AlGaAs interfaces are reported. These are obtained by implanting Ar ions at doses ranging from 2×1013 to 5×1014 cm−2 into heterostructure samples followed by rapid thermal annealing at 950 °C for 30 s. The degree of intermixing decreases from the surface up to the projected ion range and is a function of the implantation dose. It is postulated that this variation results from the coalescence of some of the excess vacancies into extended defects, which are then unavailable to assist in the enhanced interdiffusion process. By assuming that the concentration of mobile vacancies at any depth is proportional to the ion's electronic energy loss and inversely proportional to the ion's nuclear energy loss, the calculated intermixing results are shown to be in good agreement with the experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346562
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  • 6
    Electronic Resource
    Electronic Resource
    Insensitivity of YBa2Cu3O7−x to ionizing radiation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5057-5060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-temperature superconductor YBa2Cu3O7−x has been irradiated in a transmission electron microscope to investigate the effect of high doses of ionizing energy on the microstructure of this material. Electrons of energies low enough to avoid knock-on displacement damage (80 and 100 keV) were used to achieve radiation doses of 1×1012 Gy at 115 K and 2×1013 Gy at room temperature. Using the criteria of twin fading and formation of extended defects, no microstructural damage was observed. These results indicate that YBa2Cu3O7−x is extremely resistant to damage by radiolytic processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343426
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  • 7
    Electronic Resource
    Electronic Resource
    Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2693-2695 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112608
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  • 8
    Electronic Resource
    Electronic Resource
    High-temperature superconductor Josephson junctions with a gradient Pr-doped Y1−xPrxBa2Cu3O7−δ (x=0.1, 0.3, 0.5) as barriers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2866-2868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconductor YBa2Cu3O7−δ based superconducting-normal-superconducting (SNS) Josephson junctions were fabricated using a unique device design. The normal material included a gradient Pr-doped Y1−xPrxBa2Cu3O7−δ layer which was composed of a light doping (x=0.1) next to both YBa2Cu3O7−δ electrodes, a slightly higher doping (x=0.3) towards the center, and a doping concentration of x=0.5 in the middle of the N layer. This design graded the lattice mismatch between YBa2Cu3O7−δ and the N layer, thus avoiding the accumulation of all the lattice strain at one interface. It also results in good chemical, thermal, and structural compatibility between adjacent layers for the desired multilayer structures. The SNS junctions fabricated in this way showed resistively shunted junction current-voltage characteristics under dc bias and Shapiro steps under microwave irradiation at a temperature in the range of 75–87 K. Direct current superconducting quantum interference devices showed a voltage modulation about 5 μV by a magnetic field at liquid nitrogen temperature. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112518
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  • 9
    Electronic Resource
    Electronic Resource
    Single depressed-index cladding ridge waveguide laser with a low aspect ratio (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel ridge waveguide semiconductor laser diode is introduced, which contains a single depressed-index cladding layer. Deployment of this layer significantly reduces the transverse beam divergence, while maintaining reasonable values for the optical confinement factor, Γ, and the lateral index step. For lasers with 500 A(ring) active layers and ridge widths of 4 μm, we measured transverse and lateral far-field beam divergences of 16.4° and 8.2°, respectively, and threshold currents of 67 mA for 500-μm-long devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108717
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  • 10
    Electronic Resource
    Electronic Resource
    Properties of Ga vacancies in AlGaAs materials (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 651-653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intermixing of AlGaAs-based interfaces is known to be enhanced by capping wafers with a layer of SiO2. Assuming that this enhancement results from the introduction of additional Ga vacancies into the sample, it is possible to obtain the temperature-dependent equilibrium Ga vacancy diffusivity. Experiments are performed whereby SiO2-capped quantum well samples are annealed at temperatures ranging from 800 to 1025 °C. Calculated photoluminescence shifts are compared with the measured spectra, and a relation for the Ga vacancy diffusivity of the form 0.962 exp(−2.72/kBT) cm2/s is obtained. Using this relation, the equilibrium Ga vacancy concentration can be computed via an ensemble Monte Carlo simulation. The resulting expression is 1.25×1031 exp(−3.28/kBT) cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101811
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