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  • 1
    Digitale Medien
    Digitale Medien
    Deposition of a Si monolayer on sapphire using an ArF excimer laser for Si epitaxial growth (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2087-2091 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si monolayer deposition on sapphire substrates was investigated by in situ x-ray photoelectron spectroscopy (XPS). Si deposition was carried out using direct photolysis of Si2H6 by irradiation of 193 nm ArF excimer laser light (1–2 W/cm2 , 70 Hz) at room temperature in a high-vacuum chamber. At first, decomposed Si atoms bound strongly with O atoms on sapphire until the entire sapphire surface was covered, then SiSi bonds were formed. From the growth mode analysis of the early stage of Si deposition, it can be seen that the growth mode of the deposited layer is a layer-by-layer mode (the Frank–Van der Merwe-type growth). The thickness of the deposited Si layers can be controlled on an atomic scale. As these features are suitable for Si-on-sapphire (SOS) epitaxial growth with predeposited layers, SOS epitaxial growth was demonstrated and the SOS films were characterized by replica electron microscopy and fabricating a metal-oxide-semiconductor field-effect transistor.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341717
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  • 2
    Digitale Medien
    Digitale Medien
    Optical birefringence and successive phase transitions of hexagonal ABX3 -type antiferromagnets with spin frustration (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5959-5961 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: To investigate the successive ordering processes of the triangular lattice antiferromagnet CsNiCl3, a Heisenberg system with an easy-axis anisotropy, optical birefringence has been studied on various hexagonal ABX3 systems involving other types of anisotropy. The birefringence for light propagating along the c axis clearly shows that the basal plane component of spins in CsNiCl3 is ordered below the lower Néel point TN2. A cusplike anomaly in the temperature dependence of the birefringence for light propagating perpendicular to the c axis is observed at the upper Néel point TN1 of the Heisenberg system with an easy-axis anisotropy. A plausible explanation for this anomaly is presented in connection with a spin frustration effect.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342516
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  • 3
    Digitale Medien
    Digitale Medien
    Ion sources for large area processing (invited) : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1023-1028 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Large area ion sources have been used in ion doping systems in the field of LCD production. In these ion sources good uniformity and wide dynamic range in beam current are both required to achieve the good dose uniformity in wide dose range. A new ion source which uses dc arc discharge with three filaments, each of which is controlled individually, is now in the production lines instead of the conventional rf discharge type. Better than 5% of beam uniformity across 600 mm is achieved by an automated feedback control using beam profile data taken by a built-in beam profiler in less than 10 s from arc ignition. Another emerging requirement is high beam purity, for the ion beams from these ion sources are used without mass analysis. The hydrogen ion fraction was successfully reduced by magnetically retarding the hydrogen ions to less than 5%. A large area ion source having a newly designed mass separating structure is developed. The structure is comprised of a permanent magnet array and a beamlet scanner just after the multiple-slot beam extraction electrode system. All the unwanted ion species in the beam can be eliminated to a good level. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1150377
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  • 4
    Digitale Medien
    Digitale Medien
    Construction and beam experiment of a compact storage ring at MELCO : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1968-1970 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A compact storage ring has been developed for industrial research such as x-ray lithography and material analysis. This machine is of a racetrack type with two superconducting bending magnets and only two normal conducting quadrupole magnets. The circumference is as short as 9.2 m. One quadrupole magnet per cell contributes to making the smaller machine. The injector is a synchrotron, and a full energy injection of 600 MeV is performed. The bending magnets excite a field of 3.5 T, and are operated in a persistent current mode. A decrease in a coil current is ΔI/I〈3×10−3/year. The helium consumption is as low as 2 l/h for two magnets. An iron shield of the magnet decreases a leakage flux to a terrestrial level at a point 3 m from the magnet. A beam current of 380 mA has been stored with no beam instability in spite of there being no correction of the chromaticities. Beam emittances were obtained from measured beam sizes and were in good agreement with calculated values. The coupling coefficient εy/εx is calculated as around 0.04. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1145772
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  • 5
    Digitale Medien
    Digitale Medien
    The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7576-7582 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The prevention of disastrous leakage of AsH3 is a requirement for metalorganic vapor phase epitaxy systems. Less hazardous organoarsine has been investigated as an alternative to AsH3 , and recently, tertiarybutylarsine (tBAs) has been used as an arsenic source. So far the use of tBAs has been restricted to fundamental experiments. The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures has been studied using tBAs and AsH3, and the properties of the epilayers grown using both sources have been compared. From the PL spectra at 4.2 K, it was determined that GaAs films using tBAs were of high purity and equivalent to those using AsH3. The properties of AlGaAs grown using tBAs are as good as those using AsH3. A higher V/III ratio results in high-quality AlGaAs layers. The epitaxial uniformity of growth rate and AlAs mole fraction along a wafer using tBAs was poorer than those using AsH3 due to vapor phase reactions in the trimethylgallium-tBAs mixture. However, the increase of total gas flow rate in the reactor has the effect of improving uniformity. The activation efficiency of Si in AlGaAs is the same for both sources. The properties of heterostructures grown using tBAs are similar to those using AsH3. The sheet carrier concentration and electron mobility at 77 K with a spacer layer thickness of 35 A(ring) were 9.5×1011 cm−2 and 48 000 cm2 V−1 s−1, respectively. This suggests that tBAs can be used as an alternative to AsH3, for growing device-quality GaAs and AlGaAs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345823
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  • 6
    Digitale Medien
    Digitale Medien
    Nanostructured soft magnetic material with low loss and low permeability (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7103-7105 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nanostructured Fe–Cu–Nb–Si–B ribbons with relative permeability of a few hundred were prepared by using creep-induced anisotropy and their soft magnetic properties were evaluated. The observed domain pattern for an obtained ribbon suggests that magnetization process is due to the magnetization rotation mode. The variation of magnetization by its rotation results in frequency-independent behavior of the permeability up to 1 MHz with magnetic loss comparable to that of ferrite cores. A large saturation magnetization of the studied ribbons enables us to obtain the figure of merit for applications to the storage of magnetic energy being much larger than that of ferrite cores with air gaps. These results suggest that the Fe–Cu–Nb–Si–B ribbons with creep-induced anisotropy are suitable for a magnetic material for the storage of magnetic energy. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372944
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  • 7
    Digitale Medien
    Digitale Medien
    Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4064-4067 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy (MOVPE) using tertiarybutylarsine (tBAs) was measured by deep-level transient spectroscopy. EL2 concentration decreases monotonically with increasing growth temperature. Taking the origin of EL2 into consideration, we discuss the growth mechanisms of MOVPE using tBAs. The EL2 concentration is affected by the incorporation of excess As into the crystal, and, therefore, depends on the kind of reactant on the surface. We propose a model in which the reactant on the surface changes from As2H2 to As2 with increasing temperature. The temperature dependence of EL2 concentration is explained by our model where As2 dissociates into atomic As on the surface and As2H2 gives excess As in the crystal.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346243
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  • 8
    Digitale Medien
    Digitale Medien
    Use of long straight sections of SPring-8 : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 355-358 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The SPring-8 project is in progress in Japan. The main facility is an 8 GeV storage ring dedicated to synchrotron radiation [H. Kamitsubo et al. (this conference)]. The main feature of the ring is in the free straight sections 30 m long. In this paper the design of the long straight sections and how to use them is described. The long free straights are achieved through two phases to make the commissioning of the ring smooth. In the second phase, the long free straight sections are available. These long straight sections have the following potential to realize (1) extremely high brilliance, (2) multiundulators with broadband, and (3) free electron lasers. The emittance of the stored electron beam can be reduced to subnano m rad at 4 GeV with damping wigglers. Three-order higher brilliance can be obtained around 4 keV. With these optics, three-dimensional simulation was performed for free electron lasers (FEL). The calculated gain was not so large in the practical peak current level.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1142754
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  • 9
    Digitale Medien
    Digitale Medien
    Electrical resistivity measurements on fragile organic single crystals in the diamond anvil cell (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2358-2360 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A method of sample assembly for four-probe resistivity measurements on fragile organic single crystals using a diamond anvil cell is presented. A procedure to keep insulation between the metal gasket and four leads of thin gold wires bonded to the sample crystal by gold paint is described in detail. The resistivity measurements performed on a single crystal of an organic semiconductor and that of neutral molecules up to 15 GPa and down to 4.2 K showed that this new procedure of four-probe diamond anvil resistivity measurements enables us to obtain sufficiently accurate resistivity data of organic crystals. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1361085
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  • 10
    Digitale Medien
    Digitale Medien
    Studies of beam dynamics of a compact storage ring using superconducting bending magnets : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1971-1973 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A compact storage ring has been designed with a method that uses a numerical integration of exact equations of motion and exact three-dimensional magnetic fields measured. A beam test has shown that betatron tunes and chromaticities can be calculated within accuracies of 0.2% and 10%, respectively. An agreement of measured and calculated closed orbit errors and the good corrections have shown that an alignment of nonisomagnetic bending magnets, the manufacture of coils, and measurements of magnetic fields have been made accurately. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1145773
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