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  • 1
    Electronic Resource
    Electronic Resource
    Photodissociation of CF2(Double Bond)CFCl at 193 nm by translational spectroscopy (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 6107-6112 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation of CF2(Double Bond)CFCl at 193 nm has been studied by product translational spectroscopy. Results show that the molecule undergoes competing dissociation into three pairs of products: (1) CFCl+CF2, (2) C2F2Cl+F, and (3) C2F3+Cl with a relative yield of 1.0:∼0.1:1.4. When photolyzed with polarized laser light, reactions (1) and (3) were detected with fragments recoiling anisotropically, indicating that dissociation occurs primarily on the excited potential energy surface. From the maximum kinetic energy derived for reactions (2) and (3), a upper limit of 110 and 90 kcal/mol was determined for the C–F bond and the C–Cl bond dissociation energy, respectively. In addition to these primary dissociation channels, we have observed the secondary products, CF+CF2 and F+C2F2 from the primary fragment C2F3 by absorbing an additional photon. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308558
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  • 2
    Electronic Resource
    Electronic Resource
    The Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3138-3142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Si/Pd ohmic contact scheme to n-GaP (n∼5×1017 cm−3) was investigated using Rutherford backscattering spectrometry, transmission electron microscopy, energy dispersive x-ray spectrometry, and the Cox–Strack measurement. Contact resistivities of ∼2×10−4Ω cm2 are obtained for annealing temperatures ranging from 350 to 650 °C. This contact is thermally stable at 550 °C. The ohmic contact formation mechanism is rationalized in terms of the solid phase regrowth of an n+ layer and the solid phase epitaxy of a Si layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364320
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  • 3
    Electronic Resource
    Electronic Resource
    Ion irradiation-induced amorphization in the Al2O3–SiO2 system: A comparison with glass formation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 587-593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ion beam-induced crystalline-to-amorphous transition has been investigated for crystalline phases in the Al2O3–SiO2 system: Al2O3, SiO2 (quartz), Al2SiO5 (kyanite, andalusite, sillimanite), and 3Al2O3⋅2SiO2 (mullite). Xe+ 1.5 MeV was used to irradiate samples at temperatures from 15 to 1023 K in situ in a transmission electron microscope to determine the critical amorphization doses. The susceptibility to amorphization is (highest to lowest): quartz, sillimanite, kyanite, andalusite, mullite, and alumina. These data are compared to viscosities and activation energies for viscous flow of melts in this system. The doses required for amorphization by ion irradiation are related to the viscosities of the melts. The activation energies for irradiation-enhanced annealing are qualitatively correlated with the activation energies of viscous flow. These results suggest a parallel between ion beam irradiation-induced amorphization and glass formation. Glass-forming "ability'' correlates with susceptibility to radiation-induced amorphization. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364219
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  • 4
    Electronic Resource
    Electronic Resource
    Low resistance Pd/Zn/Pd ohmic contact to p-In0.82Ga0.18As0.39P0.61 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2720-2724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the investigation of a low resistance Pd/Zn/Pd contact to p-InGaAsP (λ=1.14 μm). The contact had a minimum contact resistivity of ∼3×10−7 Ω cm2 to the substrate doped to 2×1018 cm−3. The samples showed rather uniform surface and interfacial morphologies. X-ray studies showed the formation of a PdZn phase for samples annealed below 400 °C and this phase started to decompose at temperatures higher than 400 °C. Pd-III compounds (Pd2Ga5 and PdIn3) also started to form for annealing temperatures higher than 400 °C. The ohmic behavior can be understood in terms of the decomposition of the PdZn phase and the formation of Pd-III compounds for samples annealed at 400 °C or higher. The thermal stability of this contact at 400 °C was found to be stable, which is important for device applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363974
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  • 5
    Electronic Resource
    Electronic Resource
    Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 °C (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4216-4220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the ohmic contact formation mechanism of the low resistance (∼1×10−6 Ω cm2) Au/Ge/Pd contact to n-GaAs annealed at 175 °C. Cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry were utilized in this study. It is found that the solid phase regrowth process, interdiffusion between Au and Ge, and the enhancement of the conductivity of the excess Ge layer are responsible for the observed low contact resistivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361789
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  • 6
    Electronic Resource
    Electronic Resource
    Comparison of gain and threshold current density for InGaAsP/GaAs (λ=808 nm) lasers with different quantum well thickness (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8832-8834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the quantum-size effects of quantum well (QW) on gain and threshold current density for InGaAsP/GaAs (λ=808 nm) laser diodes. In this work, a comparison is made of lasers with different QW thickness while keeping the optical confinement factors constant. We found that the threshold current density and differential efficiency were not affected by narrowing the QW thickness. The theoretical model taking into account the mixing of the valence bands and momentum relaxation for InGaAsP/GaAs lasers with spontaneous emission (optically pumped) measurement shows that the absence of difference between these structures can be attributed to the high relaxation rate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362508
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  • 7
    Electronic Resource
    Electronic Resource
    Optical and photoelectrical properties of β-FeSi2 thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4793-4795 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Absorption, photocurrent, and infrared reflectivity spectra of the polycrystalline β-FeSi2 thin films in relation to the Si substrate temperature are presented. The photocurrent spectra involving both the fundamental interband, extrinsic defect transitions of β-FeSi2 and the intrinsic transitions of Si substrates are observed. Both the absorption and photocurrent measurements show the direct gap nature. A simple recombination model is proposed to account for the photocurrent results. We show that better quality β-FeSi2 films can be achieved at higher substrate temperature. The simplicity, sensitivity, and reliability of the photocurrent measurements for studying β-FeSi2 are well demonstrated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359761
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  • 8
    Electronic Resource
    Electronic Resource
    Phonon mode study of Si nanocrystals using micro-Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6705-6708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First-order Raman spectra of hydrogenated nanocrystalline silicon (nc:Si:H) films show unexpected features in their optical vibrational modes for crystallites with sizes ranging from 2 to 6 nm. Two size-dependent spectral regions, one with the stronger intensity peaking at 505–509 cm−1 and another a shoulder-like band between 512 and 517 cm−1, are clearly identified using a detailed line-shape analysis and the strong phonon confinement model. The strong size dependence of the relative integrated intensities of the two bands suggests that the modification of the vibrational spectra can be attributed to an effect induced by the atomic vibrations from the near-surface region of the nanocrystals. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360494
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  • 9
    Electronic Resource
    Electronic Resource
    Degradation mechanism of the nonspiking ohmic contacts formed by solid-phase regrowth process on n-GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1607-1610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of the Ge/Pd and the Pd-In-Ge ohmic contacts on n-GaAs formed by the solid-phase regrowth process has been investigated. It was found that degradation of these contacts at elevated temperatures cannot be rationalized by a single degradation process. The degradation at different temperatures can be best described by two processes: (a) a diffusion-controlled process and (b) a reaction-controlled process. The experimental results show that the thermal stability of the contacts can be improved by SiNx capping layers when the reaction-controlled process is the most significant process; however, SiNx capping layers cannot improve their thermal stability if the diffusion-controlled process is the dominant degradation process at elevated temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358914
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  • 10
    Electronic Resource
    Electronic Resource
    On the low resistance Au/Ge/Pd ohmic contact to n-GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4211-4215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that a Au/Ge/Pd layered structure can result in low contact resistivities (∼10−6 Ω cm2) to n-GaAs processed in three temperature ranges (175–200, 340–350, and 425–450 °C). The contacts processed below the Au–Ge eutectic temperature (361 °C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361788
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