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  • 1
    Electronic Resource
    Electronic Resource
    Trapping of hydrogen impurities in helium-implanted niobium and tantalum (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7770-7773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trapping of hydrogen impurities at helium precipitates in helium-implanted niobium and tantalum has been studied. The samples were implanted at room temperature with 100 keV 4He+ ions to doses of (0.6–36)×1016 cm−2. Some of the samples were postirradiated with 60 keV and 4 MeV protons, and annealed at elevated temperatures up to 1070 K. The helium and hydrogen concentration distributions were characterized simultaneously using the elastic-recoil-detection-analysis technique. The hydrogen distributions were also measured by the nuclear resonance reaction 1H(15N,αγ) 12C. The observed hydrogen distributions show that defect-hydrogen complexes at He bubbles are built from the ion-irradiation-induced and pre-existing vacancies and pre-existing hydrogen impurities migrated to the associated internal surfaces and that the hydrogen impurities saturate the surfaces. Recovery energies of about 2.1 eV in Nb and about 2.7 eV in Ta were observed for the hydrogen trapping defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356611
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  • 2
    Electronic Resource
    Electronic Resource
    Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3229-3232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020–1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341541
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  • 3
    Electronic Resource
    Electronic Resource
    Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1710-1717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitials. Implications of the results for suggested applications are also discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384856
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion of aluminum in ion-implanted α-Ti (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 613-614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of Al in polycrystalline ion-implanted α-Ti has been studied in the temperature range 600–850 °C using ion-beam techniques. Diffusion couples were created by ion implantation. The time-dependent concentration profiles were monitored by the use of the nuclear resonance broadening technique through the 27Al(p,γ) 28Si reaction. The effect of the implantation energy and implanted dose on the diffusivity of Al has been investigated. The value of 1.62±0.11 eV for the activation energy and (7.4±9.8)×10−7 cm2/s for the frequency factor was obtained. The present result is discussed in the framework of the Ti diffusion barrier used in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334747
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  • 5
    Electronic Resource
    Electronic Resource
    Redistribution of implanted H in annealings of n-type GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2334-2336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles of 60- and 100-keV protons implanted at room temperature to fluences of 1016 and 1017 H+ ions/cm2 in Si-doped n-type GaAs have been obtained using ion beam techniques. The profiles of H have been measured as a function of annealing temperature up to 820 K. The redistribution of implanted H is observed to depend on the migration of implantation-induced defects. The migration of H-atom-defect complexes is approximated by an Arrhenius process with an activation energy of 2.16±0.15 eV and a preexponential factor of 2×105 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341664
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  • 6
    Electronic Resource
    Electronic Resource
    Mixing of Al in Si by Ne+ ions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3246-3248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam mixing has been studied for the case where all components are collisionally similar. In this study a thin Al marker was mixed by implanting 40-keV 22Ne+ into electron-beam-evaporated Si. The mixing was studied with the nuclear resonance broadening technique. It is characterized by a broadening that is proportional to the square root of ion fluence. The data obtained at room temperature, where the negligible solubilities and thermal diffusivities do not contribute to the intermixing of Al and Si, indicate that even in the absence of the long-range transport there is a diffusion mechanism which enhances the mixing with a magnitude some 3–6 times that expected for ballistic mixing. The data is applicable for preparing Al/Si contacts by Al implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335806
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  • 7
    Electronic Resource
    Electronic Resource
    Reduced chemical sputtering of carbon by silicon doping (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2216-2218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doping is a widely used method to enhance the properties of materials. Despite the recently increased understanding of the mechanisms of chemical erosion by low-energy hydrogen ions, the effect of doping on these types of processes is still not well understood. We study the erosion of Si-doped (0–30 at. %) carbon under 20 eV deuterium irradiation using molecular dynamics simulations. We show that the chemical sputtering of carbon decreases with increasing Si concentration. The reasons for the reduced sputtering yield lie in the longer Si–C interaction lengths and efficient dynamic rebonding of hydrocarbon species. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495886
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  • 8
    Electronic Resource
    Electronic Resource
    Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing atmosphere (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2112-2120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. In order to remove the fluorine, heat treatments in the temperature range 550–1050 °C were performed in a hydrogen atmosphere. By this treatment it is possible to form volatile hydrofluoric acid and hence remove fluorine from the structure. Nuclear-resonance-broadening technique and secondary ion mass spectrometry were used for the analysis of fluorine. Fluorine was detected in all the samples except for the sample heat treated at 1050 °C. Moreover, etching of the polycrystalline silicon was observed. The gettering of fluorine, the etching of silicon and the observed formation of tungsten disilicide at 650 °C are discussed with respect to conceivable mechanisms. A thermodynamic study supporting the interpretations is also included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346566
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of hydrogen on chemical vapor deposition of tungsten on sputter-deposited TiN layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2998-3000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten (W) films are deposited on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor, initiated with the deposition of a W nucleation layer by SiH4 reduction of WF6. H2 is also introduced in the reactor for some depositions. The electrical resistivity and mechanical stress of the W films are found to be dependent on the underlying TiN layers as well as on the presence of H2 during W nucleation layer deposition. A higher resistivity is obtained when the W is deposited on the TiN prepared at 250 °C than on the TiN prepared at 450 °C. For the W deposited on the low-temperature TiN, the resistivity is reduced by adding H2 to the reactants during W nucleation layer deposition; while for the W deposited on the high-temperature TiN, the resistivity is almost insensitive to the H2 addition. More oxygen and fluorine are found at the W–TiN interface for the W deposited on the low-temperature TiN than on the high-temperature TiN. Introduction of H2 to the reactants during W nucleation layer deposition reduces the concentrations of interfacial fluorine and oxygen, in agreement with thermodynamic predictions. A lower film stress is obtained for the W deposited on the high-temperature TiN layers and/or with H2 addition. The W films become less textured when H2 is introduced to the reactants during W nucleation layer deposition. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114931
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  • 10
    Electronic Resource
    Electronic Resource
    Diffusion of Au in ZnSe and its dependence on crystal quality (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 799-802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of gold in zinc selenide has been studied by using a 12C and 4He ion backscattering technique. The samples were thin films grown by molecular beam epitaxy on bulk GaAs (100) substrates and on GaAs (100) epitaxial layers followed by evaporation of gold and annealing in the temperature range 400–800 °C. The surface properties of the samples were studied with scanning electron microscopy and atomic force microscopy. The crystal quality of the samples was studied with 4He ion channeling. The gold diffusion was found to depend significantly on the crystal quality of the ZnSe. An empirical model for calculating the diffusion coefficient for different crystal quality ZnSe is presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369162
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