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  • 1995-1999  (10)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 1243-1246 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5365-5365 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear waves in the form of solitons in magnetic films are attracting attention because of the interesting possibility of making novel spatial, and temporal, soliton devices that will operate in the technologically important microwave (GHz) frequency window. Some fascinating pioneering experimental work has been performed in this area and there is now every possibility that manipulation of solitonlike microwave pulses will be the basis of an entirely new range of devices. Both theory and experiment show that solitons are extremely robust and behave rather like particles. Magnetic films look set to become as successful as optical fibers in supporting bright envelope solitons; yet soliton behavior can often seem hard to comprehend. While they are subtle in their behavior they can be understood from many points of view that are physically, or mathematically, based. This presentation will explain what bright microwave envelope solitons are, drawing upon as much physical insight and analogy as possible. The necessary and sufficient conditions for soliton existence will be carefully set out, especially with respect to their relationship to the input conditions of a device. A substantial number of numerical examples will be used and the prospects for major expansion in the experimental area will be assessed. In the latter part of the presentation some important applications for solitons will be addressed. These will include the analysis of a switching device but logic devices, and various forms of pump–probe arrangements, will also be retrieved. Finally, the optimistic view that solitons in magnetic materials are now realistic tools will be expressed and the opportunities provided by dark and higher-dimensional solitons will be discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8010-8015 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN films grown by either organometallic vapor phase epitaxy (OMVPE) or pulsed laser deposition (PLD) can be used to encapsulate SiC when heated in an argon atmosphere at temperatures at least as high as 1600 °C for times at least as long as 30 min. The coverage of the AlN remains complete and the AlN/SiC interface remains abrupt as determined by Auger electron spectroscopy. However, considerable atomic movement occurs in the AlN at 1600 °C, and holes can form in it as the film agglomerates if there are large variations in the film thickness. Also, the SiC polytype near the surface can in some instances be changed possibly by the stress generated by the epitaxial AlN film. Using x-ray diffraction measurements, we also found that, during the 1600 °C anneal, grains with nonbasal plane orientations tended to grow at the expense of those with basal plane orientations in the OMVPE films, whereas grains with only the basal plane orientation tended to grow in the PLD films. However, there is no indication that the type of grain growth that is dominant affects the film's ability to act as an encapsulate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7130-7133 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ferroelectric-superconducting photodetector has been developed and characterized. An atomically ordered PbZrTiO3 (PZT) ferroelectric gate was grown over a c-oriented YBa2Cu3O7−x (YBCO) high Tc superconductor substrate by excimer laser deposition. Irradiation of the PZT gate with photons near the ferroelectric gap energy resulted in a measurable change of the drain-source photocurrent with the device at a temperature near Tc of the YBCO. The critical temperature of the YBCO base was shifted up to 4 K when the PZT gate was irradiated with photon flux of wavelength from 300 to 500 nm. A responsivity of 360 A/W was measured and an upper bound on response time to optical irradiation of 100 ns was determined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1858-1860 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of electron paramagnetic resonance (EPR) of nitrogen-doped 6H-SiC is reported here. By use of both first- and second-harmonic EPR detection, the predicted spectral fingerprints for nitrogen pairs and triads were found at low temperatures. The pair spectrum was present in the second harmonic, while the spectral feature for both nitrogen pairs and triads was evidenced in the first harmonic. At least one nitrogen donor of the identified pairs and triads is located at one of the two available quasicubic carbon sites, and the other(s) could be at any one of the two quasicubic sites and the hexagonal carbon site. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 368-370 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dry etching-induced surface damage and contamination on SiC have been investigated for electron cyclotron resonance (ECR) plasma etching and conventional reactive ion etching (RIE) using a CF4/O2 gas mixture. Auger electron spectroscopy shows that there is no residue on the ECR etched surfaces and sidewalls of the etched structures. In contrast, the conventional RIE process leaves residues containing large amounts of Al, F, and O impurities on the surfaces and the etched sidewalls. Pd Schottky diodes on the ECR etched surface show a near-ideal diode characteristics with ideality factor of 1.06, indicating a good surface quality. Pd Schottky diodes on the conventional RIE etched surface, however, have a substantially reduced barrier height from 1.05 eV for the as-grown sample to 0.64 eV and a high ideality factor of 1.27, indicating a substantially damaged surface. Significant free-carrier reduction is observed in the RIE etched sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1172-1174 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature photoresponse properties for a PbZrxTi1−xO3/YBa2Cu3O7−x thin-film heterostructure capacitor are reported. The fast optical readout effect measured for the device while the YBCO bottom electrode was superconducting indicates a fall time dependent on YBCO state. A simple equivalent circuit model confirmed that the temperature dependence of the YBCO electrode resistance is responsible for the variation of the fall time of the optical readout signal. Such heterostructures can be used to fabricate high power, radiation-hard optical sensors which cover the whole visible range. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 161-163 (July 1998), p. 427-430 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 30 (1998), S. 891-905 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The four vector equations, appropriate to a mixed type I–type II second-harmonic generation, in a thin planar waveguide, made from a second-order non-linear material, are solved, both approximately and exactly. The solutions are then used to generate possible applications. In this investigation, both the fundamental and the second-harmonic waves have two transverse field components. It is shown that, by controlling the ratio of the components of the fundamental wave, one component of the second-harmonic wave can be rigorously controlled, and even switched off. The ratio of the harmonic field components depends strongly upon the polarization angle of the fundamental wave, with the extinction angle depending strongly upon the phase mismatch parameter. In a second application, an aperture is placed at the output and it is shown that if approximate stationary states are used as an input to a quadratically non-linear medium, then varying the angle of incidence of two input beams produces an excellent output control. A numerical demonstration is given in which a switch from 80% of the input energy arriving at the output port to less than 3% is readily achievable.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 30 (1998), S. 783-794 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Analytical and numerical solutions that describe the coupling between bright and dark spatial solitons, located in separate planar waveguides are presented. The analytical theory rests upon a well-known variational approach and it is shown to be in good qualitative/semi-quantitative agreement with the exact numerical solutions of the coupled equations of the problem. By manipulating the soliton ‘masses’, through the input power, interesting trajectories for the solitons can be selected. Indeed, these trajectories are shown to possess behaviour patterns that qualify as the first steps in a design of an all-optical scanner. At all stages, the variational solutions are thoroughly checked by the numerical simulations and found to have excellent predictive qualities.
    Type of Medium: Electronic Resource
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